2N6028G
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onsemi 2N6028G

Manufacturer No:
2N6028G
Manufacturer:
onsemi
Package:
Bulk
Description:
THYRISTOR PROG UNIJUNCT 40V TO92
Delivery:
Payment:
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Product Introduction

Overview

The 2N6028G is a Programmable Unijunction Transistor (PUT) manufactured by onsemi. This device is designed to allow engineers to program unijunction characteristics such as RBB, η, IV, and IP by selecting two resistor values. It is available in a TO-92 plastic package, making it suitable for high-volume requirements and adaptable for use in automatic insertion equipment.

Key Specifications

Characteristic Symbol Value Unit
Power Dissipation PF 300 mW
DC Forward Anode Current IT 150 mA
DC Gate Current IG 50 mA
Repetitive Peak Forward Current (100 μs Pulse Width, 1% Duty Cycle) ITRM 1.0 A
Non-Repetitive Peak Forward Current (10 μs Pulse Width) ITSM 5.0 A
Gate to Cathode Forward Voltage VGKF 40 V
Gate to Anode Reverse Voltage VGAR 40 V
Anode to Cathode Voltage VAK ±40 V
Operating Temperature TOPR -50 to +100 °C
Junction Temperature TJ -50 to +125 °C
Storage Temperature Range Tstg -55 to +150 °C
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
Maximum Lead Temperature for Soldering Purposes TL 260 °C

Key Features

  • Programmable: Allows programming of unijunction characteristics such as RBB, η, IV, and IP by selecting two resistor values.
  • Low On-State Voltage: Maximum of 1.5 V at IF = 50 mA.
  • Low Gate to Anode Leakage Current: Maximum of 10 nA.
  • High Peak Output Voltage: Typical value of 11 V.
  • Low Offset Voltage: Typical value of 0.35 V (RG = 10 kΩ).
  • Pb-Free Packages Available: Compliant with Pb-free strategies and soldering requirements.

Applications

The 2N6028G is versatile and can be used in various applications, including:

  • Thyristor-Trigger Circuits: Due to the availability of an anode gate, it is suitable for special thyristor applications.
  • Oscillator Circuits: Can be used in oscillator circuits due to its programmable characteristics.
  • Pulse and Timing Circuits: Ideal for applications requiring precise timing and pulse generation.

Q & A

  1. What is the maximum power dissipation of the 2N6028G?

    The maximum power dissipation is 300 mW, with a derate of 4.0 mW/°C above 25°C.

  2. What is the maximum DC forward anode current for the 2N6028G?

    The maximum DC forward anode current is 150 mA, with a derate of 2.67 mA/°C above 25°C.

  3. What are the operating temperature ranges for the 2N6028G?

    The operating temperature range is -50 to +100°C, and the junction temperature range is -50 to +125°C.

  4. How can the unijunction characteristics of the 2N6028G be programmed?

    The unijunction characteristics such as RBB, η, IV, and IP can be programmed by selecting two resistor values.

  5. What is the typical peak output voltage of the 2N6028G?

    The typical peak output voltage is 11 V.

  6. Is the 2N6028G available in Pb-free packages?
  7. What are the typical applications of the 2N6028G?

    The 2N6028G is typically used in thyristor-trigger circuits, oscillator circuits, and pulse and timing circuits.

  8. What is the maximum gate to anode reverse voltage for the 2N6028G?

    The maximum gate to anode reverse voltage is 40 V.

  9. What is the thermal resistance, junction-to-ambient, for the 2N6028G?

    The thermal resistance, junction-to-ambient, is 200 °C/W.

  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260 °C for 10 seconds maximum.

Product Attributes

Voltage:40V
Power Dissipation (Max):300 mW
Voltage - Output:11V
Voltage - Offset (Vt):600 mV
Current - Gate to Anode Leakage (Igao):10 nA
Current - Valley (Iv):25 µA
Current - Peak:150 nA
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
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Similar Products

Part Number 2N6028G 2N6027G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Voltage 40V 40V
Power Dissipation (Max) 300 mW 300 mW
Voltage - Output 11V 11V
Voltage - Offset (Vt) 600 mV 1.6 V
Current - Gate to Anode Leakage (Igao) 10 nA 10 nA
Current - Valley (Iv) 25 µA 50 µA
Current - Peak 150 nA 2 µA
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)

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