DTC114TM3T5G
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onsemi DTC114TM3T5G

Manufacturer No:
DTC114TM3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTC114TM3T5G is a digital transistor produced by onsemi, part of their Bias Resistor Transistor (BRT) series. This component is designed to integrate a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The DTC114TM3T5G is available in a SOT-723 package and is Pb-free, making it suitable for various applications, including automotive and other environments requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nA
Collector-Emitter Cutoff Current ICEO - - 500 nA
Emitter-Base Cutoff Current IEBO - - 0.9 mA
Collector-Base Breakdown Voltage V(BR)CBO 50 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V
DC Current Gain hFE 160 350 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 V
Total Device Dissipation at TA = 25°C PD 260 - - mW
Thermal Resistance, Junction to Ambient RθJA 480 - - °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates the transistor and bias resistors into a single device, reducing the complexity of the circuit.
  • Reduces Board Space: By combining multiple components into one, it minimizes the space required on the PCB.
  • Reduces Component Count: Fewer external components are needed, which can lead to cost savings and improved reliability.
  • Pb-Free Package: Suitable for applications requiring lead-free components.
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Can be used in industrial control circuits where space and component count are critical.
  • Consumer Electronics: Applicable in consumer electronic devices where compact design and simplicity are essential.
  • General Purpose Switching: Useful in general-purpose switching applications where a simple and reliable transistor is required.

Q & A

  1. What is the DTC114TM3T5G used for?

    The DTC114TM3T5G is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space.

  2. What package type does the DTC114TM3T5G come in?

    The DTC114TM3T5G is available in a SOT-723 package.

  3. Is the DTC114TM3T5G Pb-free?
  4. What is the maximum collector-emitter breakdown voltage of the DTC114TM3T5G?

    The maximum collector-emitter breakdown voltage is 50 V.

  5. What is the typical DC current gain of the DTC114TM3T5G?

    The typical DC current gain (hFE) is 350.

  6. What is the total device dissipation at 25°C for the DTC114TM3T5G?

    The total device dissipation at 25°C is 260 mW.

  7. What is the thermal resistance, junction to ambient, for the DTC114TM3T5G?

    The thermal resistance, junction to ambient, is 480 °C/W.

  8. What is the junction and storage temperature range for the DTC114TM3T5G?

    The junction and storage temperature range is -55°C to 150°C.

  9. Is the DTC114TM3T5G AEC-Q101 qualified?
  10. Where can I find detailed specifications for the DTC114TM3T5G?

    Detailed specifications can be found in the datasheet available on the onsemi website.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:260 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
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Similar Products

Part Number DTC114TM3T5G DTC114YM3T5G DTC115TM3T5G DTC114EM3T5G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 100 kOhms 10 kOhms
Resistor - Emitter Base (R2) - 47 kOhms - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA
Frequency - Transition - - - -
Power - Max 260 mW 260 mW 260 mW 260 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-723 SOT-723 SOT-723 SOT-723
Supplier Device Package SOT-723 SOT-723 SOT-723 SOT-723

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