SMUN5212T1G
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onsemi SMUN5212T1G

Manufacturer No:
SMUN5212T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMUN5212T1G is a digital transistor from onsemi, part of their series of Bias Resistor Transistors (BRT). This device integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMUN5212T1G is available in the SC-70/SOT-323 package and is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Collector-Base Cutoff CurrentICBO--100nAdc
Collector-Emitter Cutoff CurrentICEO--500nAdc
Emitter-Base Cutoff CurrentIEBO--0.2mAdc
Collector-Base Breakdown VoltageV(BR)CBO50--Vdc
Collector-Emitter Breakdown VoltageV(BR)CEO50--Vdc
DC Current GainhFE60100--
Collector-Emitter Saturation VoltageVCE(sat)--0.25Vdc
Total Device Dissipation (TA = 25°C)PD202-310mW
Thermal Resistance, Junction to AmbientRθJA618-403°C/W
Junction and Storage Temperature RangeTJ, Tstg-55 to +150--°C

Key Features

  • Simplifies circuit design by integrating the bias resistor network into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free, and RoHS compliant.
  • Available in SC-70/SOT-323 package.

Applications

The SMUN5212T1G is suitable for a variety of applications, including automotive systems, industrial control circuits, and general-purpose switching applications. Its compact package and integrated bias resistor network make it ideal for space-constrained designs and applications where component count reduction is critical.

Q & A

  1. What is the SMUN5212T1G?

    The SMUN5212T1G is a digital transistor with an integrated bias resistor network from onsemi.

  2. What are the key benefits of using the SMUN5212T1G?

    It simplifies circuit design, reduces board space, and decreases component count.

  3. What package is the SMUN5212T1G available in?

    It is available in the SC-70/SOT-323 package.

  4. Is the SMUN5212T1G RoHS compliant?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  5. What are the typical applications for the SMUN5212T1G?

    It is suitable for automotive systems, industrial control circuits, and general-purpose switching applications.

  6. What is the maximum collector-emitter saturation voltage for the SMUN5212T1G?

    The maximum collector-emitter saturation voltage is 0.25 Vdc.

  7. What is the thermal resistance, junction to ambient, for the SMUN5212T1G?

    The thermal resistance, junction to ambient, is 618 °C/W.

  8. What is the junction and storage temperature range for the SMUN5212T1G?

    The junction and storage temperature range is -55 to +150 °C.

  9. Is the SMUN5212T1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  10. What is the total device dissipation at 25°C for the SMUN5212T1G?

    The total device dissipation at 25°C is 202 mW.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:202 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Similar Products

Part Number SMUN5212T1G SMUN5213T1G SMUN5214T1G SMUN5232T1G SMUN2212T1G SMUN5112T1G SMUN5211T1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 47 kOhms 10 kOhms 4.7 kOhms 22 kOhms 22 kOhms 10 kOhms
Resistor - Emitter Base (R2) 22 kOhms 47 kOhms 47 kOhms 4.7 kOhms 22 kOhms 22 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 60 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - -
Power - Max 202 mW 202 mW 202 mW 230 mW 230 mW 202 mW 202 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-70-3 (SOT323) SC-59 SC-70-3 (SOT323) SC-70-3 (SOT323)

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