PDTD123YT,215
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Nexperia USA Inc. PDTD123YT,215

Manufacturer No:
PDTD123YT,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 250MW TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTD123YT,215 is a pre-biased bipolar transistor manufactured by Nexperia USA Inc. This NPN transistor is designed for surface mount applications and is housed in a SOT-23-3 package. It is part of Nexperia's extensive portfolio of bipolar transistors, known for their reliability and efficiency in various electronic designs.

Key Specifications

Specification Value
Mounting Style SMD/SMT
Package / Case SOT-23-3
Collector-Emitter Voltage (VCEO) Max 50 V
Continuous Collector Current 500 mA
Power Dissipation (Pd) 250 mW
Resistor Values (R1, R2) R1: 2.2 kΩ

Key Features

The PDTD123YT,215 offers several key features that make it suitable for a wide range of applications:

  • Pre-biased Configuration: The transistor comes with built-in resistors, simplifying circuit design and reducing component count.
  • High Collector Current: Capable of handling up to 500 mA, making it suitable for applications requiring moderate to high current handling.
  • Compact Package: The SOT-23-3 package is small and surface-mountable, ideal for space-constrained designs.
  • Reliability: Manufactured by Nexperia, known for producing consistently reliable semiconductor components.

Applications

The PDTD123YT,215 is versatile and can be used in various applications, including:

  • Automotive Systems: Suitable for use in automotive electronics due to its reliability and robustness.
  • Industrial Control Systems: Can be used in control circuits, power management, and signal amplification.
  • Consumer Electronics: Applicable in audio amplifiers, power supplies, and other consumer electronic devices.
  • General Purpose Amplification: Useful in general-purpose amplification and switching circuits.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the PDTD123YT,215?

    The collector-emitter voltage (VCEO) of the PDTD123YT,215 is 50 V.

  2. What is the continuous collector current of the PDTD123YT,215?

    The continuous collector current of the PDTD123YT,215 is 500 mA.

  3. What package type does the PDTD123YT,215 use?

    The PDTD123YT,215 is housed in a SOT-23-3 package.

  4. What is the power dissipation (Pd) of the PDTD123YT,215?

    The power dissipation (Pd) of the PDTD123YT,215 is 250 mW.

  5. Does the PDTD123YT,215 come with built-in resistors?

    Yes, the PDTD123YT,215 is a pre-biased transistor with built-in resistors (R1: 2.2 kΩ).

  6. What are some common applications for the PDTD123YT,215?

    The PDTD123YT,215 can be used in automotive systems, industrial control systems, consumer electronics, and general-purpose amplification and switching circuits.

  7. Who manufactures the PDTD123YT,215?

    The PDTD123YT,215 is manufactured by Nexperia USA Inc.

  8. What is the mounting style of the PDTD123YT,215?

    The mounting style of the PDTD123YT,215 is SMD/SMT.

  9. Is the PDTD123YT,215 suitable for high-temperature applications?

    While it can handle typical operating temperatures, it is important to refer to the datasheet for specific temperature ratings and limitations.

  10. Where can I find more detailed specifications for the PDTD123YT,215?

    You can find detailed specifications in the datasheet available on Nexperia's official website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTD123YT,215 PDTD123ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition - -
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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