BUK9Y14-40B,115
  • Share:

Nexperia USA Inc. BUK9Y14-40B,115

Manufacturer No:
BUK9Y14-40B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 56A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y14-40B,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the LFPAK56 package series, known for its compact size and high power density. It is designed to meet the stringent requirements of automotive and industrial applications, offering excellent thermal performance and reliability.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Part Number BUK9Y14-40B,115
Package LFPAK56, Power-SO8
Drain to Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 56 A
On-State Resistance (Rds On) @ Id, Vgs 12 mΩ @ 25 A, 5 V
Gate Threshold Voltage (Vgs(th)) @ Id 2.1 V @ 1 mA
Maximum Gate Voltage (Vgs) ±10 V
Power Dissipation (Max) @ Tc 238 W
Operating Temperature Range -55°C to 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 7973 pF @ 25 V
Gate Charge (Qg) @ Vgs 64 nC @ 5 V

Key Features

  • High power density in a compact LFPAK56 package.
  • AEC-Q101 qualified, making it suitable for automotive applications.
  • Low on-state resistance (Rds On) for efficient power handling.
  • High continuous drain current capability.
  • Wide operating temperature range from -55°C to 175°C.
  • Surface mount technology for easy integration into various designs.

Applications

  • Automotive systems, including power steering, braking, and engine management.
  • Industrial power supplies and motor control systems.
  • High-power switching applications requiring low Rds On and high current handling.
  • Electric vehicles and hybrid electric vehicles.
  • Power tools and equipment.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9Y14-40B,115 MOSFET?

    The maximum drain to source voltage (Vdss) is 40 V.

  2. What is the continuous drain current (Id) rating of this MOSFET at 25°C?

    The continuous drain current (Id) rating is 56 A at 25°C.

  3. What is the on-state resistance (Rds On) of the BUK9Y14-40B,115?

    The on-state resistance (Rds On) is 12 mΩ at 25 A and 5 V Vgs.

  4. Is the BUK9Y14-40B,115 AEC-Q101 qualified?

    Yes, the BUK9Y14-40B,115 is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the operating temperature range of this MOSFET?

    The operating temperature range is from -55°C to 175°C (TJ).

  6. What type of packaging does the BUK9Y14-40B,115 use?

    The BUK9Y14-40B,115 uses the LFPAK56, Power-SO8 package.

  7. What is the maximum gate voltage (Vgs) for this MOSFET?

    The maximum gate voltage (Vgs) is ±10 V.

  8. What is the input capacitance (Ciss) of the BUK9Y14-40B,115?

    The input capacitance (Ciss) is 7973 pF at 25 V Vds.

  9. What is the gate charge (Qg) of this MOSFET?

    The gate charge (Qg) is 64 nC at 5 V Vgs.

  10. Where can I find detailed datasheets for the BUK9Y14-40B,115?

    Detailed datasheets can be found on the Nexperia website, as well as through authorized distributors like Mouser, Digi-Key, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.98
1,006

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PBSS4540Z,115
PBSS4540Z,115
Nexperia USA Inc.
TRANS NPN 40V 5A SOT223
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
74HCT04PW,118
74HCT04PW,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14TSSOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
BUK7Y2R5-40H,115
BUK7Y2R5-40H,115
Nexperia USA Inc.
POWER FIELD-EFFECT TRANSISTOR