IPW65R080CFDAFKSA1
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Infineon Technologies IPW65R080CFDAFKSA1

Manufacturer No:
IPW65R080CFDAFKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
MOSFET N-CH 650V 43.3A TO247-3
Delivery:
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Product Introduction

Overview

The IPW65R080CFDAFKSA1 is a 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET from Infineon Technologies, designed specifically for automotive applications. It is part of Infineon's second generation of high-voltage CoolMOS™ power MOSFETs, known for their high quality, reliability, and integrated fast body diode. This MOSFET is compliant with the AEC Q101 standard, ensuring it meets the stringent requirements of the automotive industry.

Key Specifications

ParameterValue
Voltage Rating (Vds)650 V
On-State Resistance (Rds(on))80 mΩ max
Package TypePG-TO-247-3
Gate Charge (Qg)Low gate charge value
Reverse Recovery Charge (Qrr)Low Qrr at repetitive commutation on body diode
Output Capacitance (Coss)Low Qoss
ComplianceAEC Q101 standard

Key Features

  • First 650V automotive qualified technology with integrated fast body diode on the market
  • Limited voltage overshoot during hard commutation – self-limiting di/dt and dv/dt
  • Low gate charge value Qg
  • Low Qrr at repetitive commutation on body diode & low Qoss
  • Reduced turn-on and turn-off delay times
  • Increased safety margin due to higher breakdown voltage
  • Reduced EMI appearance and easy to design in
  • Better light load efficiency
  • Lower switching losses
  • Higher switching frequency and/or higher duty cycle possible
  • High quality and reliability

Applications

  • Unidirectional and bidirectional DC-DC converters
  • Battery chargers
  • HID lighting

Q & A

  1. What is the voltage rating of the IPW65R080CFDAFKSA1 MOSFET?
    The voltage rating of the IPW65R080CFDAFKSA1 MOSFET is 650 V.
  2. What is the on-state resistance (Rds(on)) of this MOSFET?
    The on-state resistance (Rds(on)) is 80 mΩ max.
  3. What package type does this MOSFET use?
    The package type is PG-TO-247-3.
  4. Is the IPW65R080CFDAFKSA1 compliant with any automotive standards?
    Yes, it is compliant with the AEC Q101 standard.
  5. What are some key features of this MOSFET?
    Key features include an integrated fast body diode, low gate charge value Qg, low Qrr at repetitive commutation on body diode, and reduced turn-on and turn-off delay times.
  6. What are some potential applications for this MOSFET?
    Potential applications include unidirectional and bidirectional DC-DC converters, battery chargers, and HID lighting.
  7. How does this MOSFET improve safety margins?
    The MOSFET improves safety margins due to its higher breakdown voltage.
  8. What benefits does this MOSFET offer in terms of EMI and design?
    The MOSFET offers reduced EMI appearance and is easy to design in.
  9. How does this MOSFET enhance efficiency and switching performance?
    The MOSFET provides better light load efficiency, lower switching losses, and allows for higher switching frequencies and/or higher duty cycles.
  10. What is the significance of the integrated fast body diode in this MOSFET?
    The integrated fast body diode is a unique feature that enhances the performance and reliability of the MOSFET, especially during hard commutation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):391W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW65R080CFDAFKSA1 IPW65R080CFDFKSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 700 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.6A, 10V 80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4440 pF @ 100 V 5030 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 391W (Tc) 391W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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