BC807-16WE6327
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Infineon Technologies BC807-16WE6327

Manufacturer No:
BC807-16WE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-16WE6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose and small-signal applications, offering high collector current and high current gain. It is part of the BC807 series, known for its reliability and versatility in various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Voltage (Vceo) 45 V
Collector-Base Voltage (Vcbo) 50 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 500 mA
DC Current Gain (hFE) 160 - 400
Collector-Emitter Saturation Voltage (Vce(sat)) 0.7 V
Base-Emitter On Voltage (Vbe(on)) 1.2 V
Power Dissipation (Pd) 250 mW
Transition Frequency (ft) 200 MHz
Operating Temperature (Tj) -55 to +150 °C
Package SOT-323-3
Mounting Type Surface Mount

Key Features

  • High collector current of up to 500 mA
  • High DC current gain (hFE) ranging from 160 to 400
  • Low collector-emitter saturation voltage (Vce(sat)) of 0.7 V
  • High transition frequency (ft) of 200 MHz
  • RoHS compliant and Pb-free
  • Surface mount package (SOT-323-3) for easy integration into modern PCB designs
  • Wide operating temperature range from -55°C to +150°C

Applications

The BC807-16WE6327 is suitable for a variety of general-purpose and small-signal applications, including:

  • Amplifier circuits
  • Switching circuits
  • Audio and video equipment
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the maximum collector current of the BC807-16WE6327?

    The maximum collector current is 500 mA.

  2. What is the typical DC current gain (hFE) of this transistor?

    The DC current gain (hFE) ranges from 160 to 400.

  3. What is the collector-emitter saturation voltage (Vce(sat))?

    The collector-emitter saturation voltage (Vce(sat)) is 0.7 V.

  4. What is the transition frequency (ft) of the BC807-16WE6327?

    The transition frequency (ft) is 200 MHz.

  5. Is the BC807-16WE6327 RoHS compliant?
  6. What is the operating temperature range of this transistor?

    The operating temperature range is from -55°C to +150°C.

  7. What package type does the BC807-16WE6327 use?

    The transistor uses a SOT-323-3 surface mount package.

  8. What are some common applications for the BC807-16WE6327?

    Common applications include amplifier circuits, switching circuits, audio and video equipment, automotive electronics, and consumer electronics.

  9. Is the BC807-16WE6327 still in production?

    No, the BC807-16WE6327 is listed as obsolete and is no longer manufactured.

  10. Where can I find detailed specifications for the BC807-16WE6327?

    Detailed specifications can be found in the datasheet available from sources like DigiKey, Infineon Technologies, and other electronic component distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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