BSS138WH6433XTMA1
  • Share:

Infineon Technologies BSS138WH6433XTMA1

Manufacturer No:
BSS138WH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W, specifically the BSS138WH6433XTMA1, is a N-channel enhancement mode field-effect transistor (FET) produced by Infineon Technologies. This component is designed for high-performance applications requiring low on-state resistance and high switching speeds. It is qualified according to AEC Q101 standards and is halogen-free, adhering to IEC61249-2-21 specifications. The BSS138W is packaged in a PG-SOT-323 footprint, making it suitable for a variety of compact and efficient designs.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Drain-source breakdown voltageV(BR)DSSV GS = 0 V, I D = 250 µAV60--
Gate threshold voltageV GS(th)V GS = V DS, I D = 26 µAV0.61.01.4
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.03 AΩ-34.0
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.16 AΩ-3.26
Drain-source on-state resistanceR DS(on)V GS = 10 V, I D = 0.2 AΩ-2.13.5
Input capacitanceC iss-pF32-43
Output capacitanceC oss-pF7.2-10
Reverse transfer capacitanceC rss-pF2.8-4.2
Turn-on delay timet d(on)-ns2.2-3.3
Rise timet r-ns3.0-4.5
Turn-off delay timet d(off)-ns6.7-10
Fall timet f-ns8.2-12

Key Features

  • Low On-State Resistance: The BSS138W offers low R DS(on) values, making it suitable for high-efficiency applications.
  • High Switching Speeds: With fast turn-on and turn-off times, this FET is ideal for high-frequency switching applications.
  • Compact Package: The PG-SOT-323 package ensures a minimal footprint, making it perfect for space-constrained designs.
  • AEC Q101 Qualified: This component meets the stringent requirements of the automotive industry.
  • Halogen-Free: Compliant with IEC61249-2-21, ensuring environmental sustainability.

Applications

The BSS138W is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Given its AEC Q101 qualification, it is suitable for use in automotive electronics such as power management and motor control.
  • Power Management: Ideal for DC-DC converters, power supplies, and other power management circuits due to its low on-state resistance and high switching speeds.
  • Industrial Control: Used in industrial control systems, motor drives, and other high-performance industrial applications.
  • Consumer Electronics: Suitable for use in consumer electronics requiring efficient power management and high switching speeds.

Q & A

  1. What is the maximum drain-source breakdown voltage of the BSS138W?
    The maximum drain-source breakdown voltage is 60 V.
  2. What is the typical gate threshold voltage of the BSS138W?
    The typical gate threshold voltage is 1.0 V.
  3. What is the maximum drain-source on-state resistance at V GS = 4.5 V and I D = 0.03 A?
    The maximum drain-source on-state resistance is 4.0 Ω.
  4. What is the typical turn-on delay time of the BSS138W?
    The typical turn-on delay time is 2.2 ns.
  5. Is the BSS138W halogen-free?
    Yes, the BSS138W is halogen-free according to IEC61249-2-21.
  6. What is the package type of the BSS138W?
    The package type is PG-SOT-323.
  7. What are the operating and storage temperature ranges for the BSS138W?
    The operating and storage temperature ranges are -55°C to 150°C.
  8. What is the maximum input capacitance of the BSS138W?
    The maximum input capacitance is 43 pF.
  9. Is the BSS138W qualified according to AEC Q101 standards?
    Yes, the BSS138W is qualified according to AEC Q101 standards.
  10. What are some typical applications of the BSS138W?
    The BSS138W is typically used in automotive systems, power management, industrial control, and consumer electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.44
496

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6327XTSA1
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138WH6433XTMA1
BSS138WH6433XTMA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138WH6433XTMA1 BSS138NH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 10V 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 41 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT23
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BC817-40E6433
BC817-40E6433
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IRLML6346TRPBF
IRLML6346TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.4A SOT23
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
FM25L16B-GTR
FM25L16B-GTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC