BSS138WH6433XTMA1
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Infineon Technologies BSS138WH6433XTMA1

Manufacturer No:
BSS138WH6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W, specifically the BSS138WH6433XTMA1, is a N-channel enhancement mode field-effect transistor (FET) produced by Infineon Technologies. This component is designed for high-performance applications requiring low on-state resistance and high switching speeds. It is qualified according to AEC Q101 standards and is halogen-free, adhering to IEC61249-2-21 specifications. The BSS138W is packaged in a PG-SOT-323 footprint, making it suitable for a variety of compact and efficient designs.

Key Specifications

ParameterSymbolConditionsUnitMin.Typ.Max.
Drain-source breakdown voltageV(BR)DSSV GS = 0 V, I D = 250 µAV60--
Gate threshold voltageV GS(th)V GS = V DS, I D = 26 µAV0.61.01.4
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.03 AΩ-34.0
Drain-source on-state resistanceR DS(on)V GS = 4.5 V, I D = 0.16 AΩ-3.26
Drain-source on-state resistanceR DS(on)V GS = 10 V, I D = 0.2 AΩ-2.13.5
Input capacitanceC iss-pF32-43
Output capacitanceC oss-pF7.2-10
Reverse transfer capacitanceC rss-pF2.8-4.2
Turn-on delay timet d(on)-ns2.2-3.3
Rise timet r-ns3.0-4.5
Turn-off delay timet d(off)-ns6.7-10
Fall timet f-ns8.2-12

Key Features

  • Low On-State Resistance: The BSS138W offers low R DS(on) values, making it suitable for high-efficiency applications.
  • High Switching Speeds: With fast turn-on and turn-off times, this FET is ideal for high-frequency switching applications.
  • Compact Package: The PG-SOT-323 package ensures a minimal footprint, making it perfect for space-constrained designs.
  • AEC Q101 Qualified: This component meets the stringent requirements of the automotive industry.
  • Halogen-Free: Compliant with IEC61249-2-21, ensuring environmental sustainability.

Applications

The BSS138W is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Given its AEC Q101 qualification, it is suitable for use in automotive electronics such as power management and motor control.
  • Power Management: Ideal for DC-DC converters, power supplies, and other power management circuits due to its low on-state resistance and high switching speeds.
  • Industrial Control: Used in industrial control systems, motor drives, and other high-performance industrial applications.
  • Consumer Electronics: Suitable for use in consumer electronics requiring efficient power management and high switching speeds.

Q & A

  1. What is the maximum drain-source breakdown voltage of the BSS138W?
    The maximum drain-source breakdown voltage is 60 V.
  2. What is the typical gate threshold voltage of the BSS138W?
    The typical gate threshold voltage is 1.0 V.
  3. What is the maximum drain-source on-state resistance at V GS = 4.5 V and I D = 0.03 A?
    The maximum drain-source on-state resistance is 4.0 Ω.
  4. What is the typical turn-on delay time of the BSS138W?
    The typical turn-on delay time is 2.2 ns.
  5. Is the BSS138W halogen-free?
    Yes, the BSS138W is halogen-free according to IEC61249-2-21.
  6. What is the package type of the BSS138W?
    The package type is PG-SOT-323.
  7. What are the operating and storage temperature ranges for the BSS138W?
    The operating and storage temperature ranges are -55°C to 150°C.
  8. What is the maximum input capacitance of the BSS138W?
    The maximum input capacitance is 43 pF.
  9. Is the BSS138W qualified according to AEC Q101 standards?
    Yes, the BSS138W is qualified according to AEC Q101 standards.
  10. What are some typical applications of the BSS138W?
    The BSS138W is typically used in automotive systems, power management, industrial control, and consumer electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number BSS138WH6433XTMA1 BSS138NH6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 10V 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 41 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT23
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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