BSS138WH6327XTSA1
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Infineon Technologies BSS138WH6327XTSA1

Manufacturer No:
BSS138WH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS138WH6327XTSA1 is an N-Channel Small Signal MOSFET produced by Infineon Technologies AG. This device is part of Infineon's extensive portfolio of N and P-Channel Small Signal MOSFETs, known for their high reliability and compliance with automotive and industrial standards. The BSS138WH6327XTSA1 is packaged in a 3-pin SOT-323 package and is designed for enhancement mode operation. It is qualified according to AEC-Q101, making it suitable for automotive applications. The MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 500 mW.

Key Specifications

Parameter Symbol Conditions Unit Min. Typ. Max.
Drain-Source Breakdown Voltage V(BR)DSS V GS = 0 V, I D = 250 µA V - - 60
Gate Threshold Voltage V GS(th) V GS = V DS, I D = 26 µA V 0.6 1.0 1.4
Drain-Source On-State Resistance R DS(on) V GS = 4.5 V, I D = 0.03 A - 3 4.0
Drain Current I D - A - - 0.28
Maximum Power Dissipation P tot T A = 25 °C W - - 0.50
Operating Temperature Range T j - °C -55 - 150
Package Type - - - - - SOT-323

Key Features

  • Enhancement Mode Operation: The MOSFET operates in enhancement mode, which is suitable for a variety of applications.
  • Logic Level: Compatible with logic level gate drive, making it versatile for different circuit designs.
  • Avalanche Rated: Capable of withstanding avalanche conditions, enhancing reliability.
  • Fast Switching: Features fast switching times, which is beneficial for high-frequency applications.
  • Dv/dt Rated: Rated for high dv/dt, ensuring robust performance in dynamic environments.
  • Pb-free and RoHS Compliant: Lead-plating is Pb-free, and the device is RoHS compliant and halogen-free.
  • Qualified According to Automotive Standards: Qualified according to AEC-Q101, ensuring high reliability for automotive applications.
  • Low R DS(on): Provides higher efficiency and extends battery life due to low on-state resistance.
  • Small Package: SOT-323 package saves PCB space, making it ideal for compact designs.

Applications

  • LED Lighting: Suitable for LED lighting applications due to its fast switching and low on-state resistance.
  • ADAS (Advanced Driver Assistance Systems): Used in various ADAS components for automotive systems.
  • Body Control Units: Ideal for body control units in vehicles due to its reliability and compliance with automotive standards.
  • SMPS (Switch-Mode Power Supplies): Suitable for use in SMPS due to its fast switching and high efficiency.
  • Motor Control: Used in motor control applications requiring fast switching and high reliability.

Q & A

  1. What is the maximum drain-source breakdown voltage of the BSS138WH6327XTSA1?

    The maximum drain-source breakdown voltage is 60 V.

  2. What is the typical gate threshold voltage of this MOSFET?

    The typical gate threshold voltage is 1.0 V.

  3. What is the maximum drain current (I D) of the BSS138WH6327XTSA1?

    The maximum drain current is 0.28 A.

  4. What is the maximum power dissipation of this MOSFET?

    The maximum power dissipation is 500 mW at T A = 25 °C.

  5. What is the operating temperature range of the BSS138WH6327XTSA1?

    The operating temperature range is from -55 °C to 150 °C.

  6. Is the BSS138WH6327XTSA1 RoHS compliant and halogen-free?

    Yes, it is RoHS compliant and halogen-free.

  7. What package type is used for the BSS138WH6327XTSA1?

    The package type is SOT-323.

  8. What are some typical applications of the BSS138WH6327XTSA1?

    Typical applications include LED lighting, ADAS, body control units, SMPS, and motor control.

  9. Is the BSS138WH6327XTSA1 qualified according to automotive standards?

    Yes, it is qualified according to AEC-Q101.

  10. What are the benefits of the low R DS(on) in the BSS138WH6327XTSA1?

    The low R DS(on) provides higher efficiency and extends battery life.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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