BSS138W E6327
  • Share:

Infineon Technologies BSS138W E6327

Manufacturer No:
BSS138W E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W E6327 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This device is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, known for their high quality and reliability. The BSS138W is housed in a compact SOT323 package, making it suitable for a variety of applications where space is limited.

This MOSFET is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications and is qualified according to automotive standards, making it a reliable choice for automotive and industrial uses.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 50 V
Gate to Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) at 25°C 0.22 A A
Pulsed Drain Current (ID) 0.84 A A
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 0.22 A 3.5 Ω Ω
On-State Resistance (RDS(on)) at VGS = 4.5 V, ID = 0.22 A 6.0 Ω Ω
Operating and Storage Junction Temperature Range -55 to +150 °C °C
Maximum Lead Temperature for Soldering Purposes 300 °C °C
Maximum Power Dissipation 340 mW mW
Thermal Resistance, Junction to Ambient 367 °C/W °C/W

Key Features

  • Enhancement mode N-Channel MOSFET
  • Logic level operation
  • Avalanche rated for robustness
  • Fast switching performance
  • Dv/dt rated for high reliability
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards and PPAP capable
  • Low on-state resistance (RDS(on)) for higher efficiency and extended battery life
  • Compact SOT323 package to save PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Other low voltage, low current switching applications

Q & A

  1. What is the drain to source voltage rating of the BSS138W MOSFET?

    The drain to source voltage rating (VDSS) is 50 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is 0.22 A.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 0.22 A?

    The on-state resistance (RDS(on)) is 3.5 Ω at VGS = 10 V and ID = 0.22 A.

  4. Is the BSS138W MOSFET RoHS compliant and Pb-free?

    Yes, the BSS138W MOSFET is RoHS compliant and Pb-free.

  5. What are the operating and storage temperature ranges for the BSS138W MOSFET?

    The operating and storage junction temperature range is -55 to +150 °C.

  6. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 300 °C.

  7. What are some typical applications for the BSS138W MOSFET?

    Typical applications include LED lighting, ADAS, body control units, SMPS, motor control, and small servo motor control.

  8. Is the BSS138W MOSFET qualified according to automotive standards?

    Yes, the BSS138W MOSFET is qualified according to automotive standards and is PPAP capable.

  9. What is the thermal resistance, junction to ambient, for the BSS138W MOSFET?

    The thermal resistance, junction to ambient, is 367 °C/W.

  10. What package type is the BSS138W MOSFET available in?

    The BSS138W MOSFET is available in the SOT323 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
101

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6327XTSA1
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6327
BSS138W L6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W E6327 BSS138W L6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

BAV 99T E6433
BAV 99T E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC75
BAV 99S H6827
BAV 99S H6827
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BC847PNH6433XTMA1
BC847PNH6433XTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC857BE6327
BC857BE6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC 817-40 B5003
BC 817-40 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
BSP452HUMA1
BSP452HUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
CY7C68013A-100AXC
CY7C68013A-100AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 100LQFP
CY7C67300-100AXIT
CY7C67300-100AXIT
Infineon Technologies
IC USB HOST/PERIPH CNTRL 100LQFP