IRLML2402TRPBF
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Infineon Technologies IRLML2402TRPBF

Manufacturer No:
IRLML2402TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 1.2A SOT23
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML2402TRPBF is a 20V single N-Channel HEXFET Power MOSFET produced by Infineon Technologies. This device is part of the fifth generation of HEXFETs, which utilize advanced processing techniques to achieve extremely low on-resistance. It is packaged in a Micro3 (SOT-23) package, making it suitable for applications where space is limited.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (V_DS) 20 V
Drain Current (I_D) 6 A
On-Resistance (R_DS(on)) at V_GS = 4.5V 28 mΩ
Package Type Micro3 (SOT-23)
Operating Temperature Range -55 to 150 °C

Key Features

  • Low on-resistance (R_DS(on)) of 28 mΩ at V_GS = 4.5V, ensuring high efficiency and minimal power loss.
  • High drain current capability of up to 6 A.
  • Compact Micro3 (SOT-23) package, ideal for space-constrained applications.
  • RoHS compliant, making it environmentally friendly.
  • Advanced processing techniques for improved performance and reliability.

Applications

  • Automotive head units and other automotive electronics.
  • Electric Vehicle (EV) charging systems.
  • Roof control modules with interior and ambient light control.
  • Telecommunication infrastructure.

Q & A

  1. What is the maximum drain-to-source voltage of the IRLML2402TRPBF?

    The maximum drain-to-source voltage is 20 V.

  2. What is the typical on-resistance of the IRLML2402TRPBF at V_GS = 4.5V?

    The typical on-resistance is 28 mΩ at V_GS = 4.5V.

  3. What is the maximum drain current of the IRLML2402TRPBF?

    The maximum drain current is 6 A.

  4. In what package is the IRLML2402TRPBF available?

    The IRLML2402TRPBF is available in a Micro3 (SOT-23) package.

  5. Is the IRLML2402TRPBF RoHS compliant?

    Yes, the IRLML2402TRPBF is RoHS compliant.

  6. What are some common applications of the IRLML2402TRPBF?

    Common applications include automotive head units, EV charging systems, roof control modules, and telecommunication infrastructure.

  7. What is the operating temperature range of the IRLML2402TRPBF?

    The operating temperature range is -55 to 150°C.

  8. Who is the manufacturer of the IRLML2402TRPBF?

    The manufacturer is Infineon Technologies.

  9. Where can I find detailed specifications and datasheets for the IRLML2402TRPBF?

    Detailed specifications and datasheets can be found on the Infineon Technologies website, as well as other electronic component databases like Digi-Key, Mouser, and LCSC.

  10. What are the benefits of using the fifth generation HEXFET technology in the IRLML2402TRPBF?

    The benefits include extremely low on-resistance, high efficiency, and improved performance and reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:250mOhm @ 930mA, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:3.9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML2402TRPBF IRLML6402TRPBF IRLML2502TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 3.7A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 250mOhm @ 930mA, 4.5V 65mOhm @ 3.7A, 4.5V 45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA (Min) 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 4.5 V 12 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±12V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 15 V 633 pF @ 10 V 740 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 540mW (Ta) 1.3W (Ta) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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