IRLML6402TRPBF
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Infineon Technologies IRLML6402TRPBF

Manufacturer No:
IRLML6402TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.7A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML6402TRPBF is a 20 V single P-Channel HEXFET Power MOSFET produced by Infineon Technologies. This device is available in a low-profile MICRO-3 package, which is a surface-mount type with an industry-standard SOT-23 footprint. The MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, making it highly efficient and reliable for various applications. It is known for its fast switching speed and ruggedized device design, which are characteristic of HEXFET power MOSFETs.

Key Specifications

Fet TypeDrain-to-Source Voltage [Vdss]Drain-Source On Resistance-MaxRated Power DissipationQg Gate ChargePackage StyleMounting Method
P-Ch20V0.065Ω1.3 W8 nCMICRO-3Surface Mount

Key Features

  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free
  • Halogen-Free
  • Planar cell structure for wide SOA
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz

Applications

  • Battery Management
  • Load Management
  • Portable Electronics
  • PCMCIA Cards
  • DC Switches
  • Load Switches
  • Consumer Electronics
  • Digital Input/Output (I/O) Modules
  • Servo Motor Drive

Q & A

  1. What is the drain-to-source voltage rating of the IRLML6402TRPBF?
    The drain-to-source voltage rating is 20V.
  2. What is the maximum on-resistance of the IRLML6402TRPBF?
    The maximum on-resistance is 0.065Ω.
  3. What is the rated power dissipation of the IRLML6402TRPBF?
    The rated power dissipation is 1.3 W.
  4. What is the gate charge (Qg) of the IRLML6402TRPBF?
    The gate charge (Qg) is 8 nC.
  5. What package style and mounting method does the IRLML6402TRPBF use?
    The package style is MICRO-3, and the mounting method is Surface Mount.
  6. Is the IRLML6402TRPBF lead-free and halogen-free?
    Yes, the IRLML6402TRPBF is both lead-free and halogen-free.
  7. What are some common applications of the IRLML6402TRPBF?
    Common applications include battery management, load management, portable electronics, PCMCIA cards, DC switches, and servo motor drives.
  8. What is the typical switching speed of the IRLML6402TRPBF?
    The IRLML6402TRPBF is known for its fast switching speed, which is optimized for applications switching below <100kHz.
  9. Is the IRLML6402TRPBF qualified according to JEDEC standards?
    Yes, the IRLML6402TRPBF is qualified according to JEDEC standards.
  10. What is the footprint of the IRLML6402TRPBF package?
    The package has an SOT-23 footprint.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML6402TRPBF IRLML2402TRPBF IRLML6302TRPBF IRLML6401TRPBF IRLML6402GTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Discontinued at Digi-Key
FET Type P-Channel N-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) 1.2A (Ta) 780mA (Ta) 4.3A (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.7V, 4.5V 2.7V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V 250mOhm @ 930mA, 4.5V 600mOhm @ 610mA, 4.5V 50mOhm @ 4.3A, 4.5V 65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 700mV @ 250µA (Min) 1.5V @ 250µA 950mV @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V 3.9 nC @ 4.5 V 3.6 nC @ 4.45 V 15 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±12V ±12V ±12V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V 110 pF @ 15 V 97 pF @ 15 V 830 pF @ 10 V 633 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.3W (Ta) 540mW (Ta) 540mW (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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