Overview
The IRLML6402GTRPBF is a single P-Channel power MOSFET produced by Infineon Technologies. It is part of the HEXFET® family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is packaged in a low-profile MICRO-3 (SOT-23) footprint, making it suitable for a variety of applications where space is limited.
The device is designed for fast switching and offers high performance, especially in low-frequency applications. It is compliant with RoHS and Green Product requirements, ensuring environmental sustainability and reliability.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Fet Type | P-Channel | |
Drain-to-Source Voltage (Vdss) | 20 | V |
Drain-Source On Resistance (Rds(on)) | 0.035 (typ), 0.065 (max) | Ω |
Rated Power Dissipation | 1.25 | W |
Gate Charge (Qg) | 8 nC (typ), 10 nC (max) | nC |
Maximum Drain Current (Id) | 4.5 A | A |
Maximum Gate-Source Voltage (Vgs) | 12 | V |
Maximum Junction Temperature (Tj) | 150 | °C |
Package Style | MICRO-3 (SOT-23) | |
Mounting Method | Surface Mount |
Key Features
- Ultra Low On-Resistance
- P-Channel MOSFET
- SOT-23 Footprint
- Low Profile (<1.1mm)
- Available in Tape and Reel
- Fast Switching
- Lead-Free and Halogen-Free
- Planar cell structure for wide Safe Operating Area (SOA)
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below 100kHz
- Industry standard surface-mount package
Applications
- Battery Management
- Load Management
- Portable Electronics
- PCMCIA Cards
- DC Switches
- Load Switches
- DC Motors
- Inverters
- Switch-Mode Power Supplies (SMPS)
- Lighting
- High-Speed Switching Applications
- Switching Regulators and DC-DC Converters
- Motor Drive Applications
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the IRLML6402GTRPBF?
The maximum drain-to-source voltage (Vdss) is 20 V.
- What is the typical on-resistance (Rds(on)) of the IRLML6402GTRPBF?
The typical on-resistance (Rds(on)) is 0.035 Ω, with a maximum of 0.065 Ω.
- What is the maximum drain current (Id) of the IRLML6402GTRPBF?
The maximum drain current (Id) is 4.5 A.
- What is the package style of the IRLML6402GTRPBF?
The package style is MICRO-3 (SOT-23).
- Is the IRLML6402GTRPBF RoHS and Green Product compliant?
- What are some common applications for the IRLML6402GTRPBF?
- What is the maximum junction temperature (Tj) of the IRLML6402GTRPBF?
The maximum junction temperature (Tj) is 150 °C.
- What is the gate charge (Qg) of the IRLML6402GTRPBF?
The gate charge (Qg) is typically 8 nC, with a maximum of 10 nC.
- Is the IRLML6402GTRPBF available in tape and reel packaging?
- What are the benefits of using the IRLML6402GTRPBF in low-frequency applications?