IRLML6402GTRPBF
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Infineon Technologies IRLML6402GTRPBF

Manufacturer No:
IRLML6402GTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.7A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRLML6402GTRPBF is a single P-Channel power MOSFET produced by Infineon Technologies. It is part of the HEXFET® family, known for its advanced processing techniques that achieve extremely low on-resistance per silicon area. This MOSFET is packaged in a low-profile MICRO-3 (SOT-23) footprint, making it suitable for a variety of applications where space is limited.

The device is designed for fast switching and offers high performance, especially in low-frequency applications. It is compliant with RoHS and Green Product requirements, ensuring environmental sustainability and reliability.

Key Specifications

Parameter Value Unit
Fet Type P-Channel
Drain-to-Source Voltage (Vdss) 20 V
Drain-Source On Resistance (Rds(on)) 0.035 (typ), 0.065 (max) Ω
Rated Power Dissipation 1.25 W
Gate Charge (Qg) 8 nC (typ), 10 nC (max) nC
Maximum Drain Current (Id) 4.5 A A
Maximum Gate-Source Voltage (Vgs) 12 V
Maximum Junction Temperature (Tj) 150 °C
Package Style MICRO-3 (SOT-23)
Mounting Method Surface Mount

Key Features

  • Ultra Low On-Resistance
  • P-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free and Halogen-Free
  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100kHz
  • Industry standard surface-mount package

Applications

  • Battery Management
  • Load Management
  • Portable Electronics
  • PCMCIA Cards
  • DC Switches
  • Load Switches
  • DC Motors
  • Inverters
  • Switch-Mode Power Supplies (SMPS)
  • Lighting
  • High-Speed Switching Applications
  • Switching Regulators and DC-DC Converters
  • Motor Drive Applications

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the IRLML6402GTRPBF?

    The maximum drain-to-source voltage (Vdss) is 20 V.

  2. What is the typical on-resistance (Rds(on)) of the IRLML6402GTRPBF?

    The typical on-resistance (Rds(on)) is 0.035 Ω, with a maximum of 0.065 Ω.

  3. What is the maximum drain current (Id) of the IRLML6402GTRPBF?

    The maximum drain current (Id) is 4.5 A.

  4. What is the package style of the IRLML6402GTRPBF?

    The package style is MICRO-3 (SOT-23).

  5. Is the IRLML6402GTRPBF RoHS and Green Product compliant?
  6. What are some common applications for the IRLML6402GTRPBF?
  7. What is the maximum junction temperature (Tj) of the IRLML6402GTRPBF?

    The maximum junction temperature (Tj) is 150 °C.

  8. What is the gate charge (Qg) of the IRLML6402GTRPBF?

    The gate charge (Qg) is typically 8 nC, with a maximum of 10 nC.

  9. Is the IRLML6402GTRPBF available in tape and reel packaging?
  10. What are the benefits of using the IRLML6402GTRPBF in low-frequency applications?

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:633 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML6402GTRPBF IRLML6402TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3.7A, 4.5V 65mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5 V 12 nC @ 5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 10 V 633 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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