BC 817-25 B5003
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Infineon Technologies BC 817-25 B5003

Manufacturer No:
BC 817-25 B5003
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC 817-25 B5003 is an NPN general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BC817 series, known for its high collector current, high current gain, and low collector-emitter saturation voltage. It is packaged in a small SOT23 (TO-236AB) surface-mount device (SMD) plastic package, making it suitable for a wide range of electronic applications.

Key Specifications

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700 mV @ 50 mA, 500 mA
Current - Collector Cutoff (Max) 100 nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100 mA, 1 V
Power - Max 250 mW
Frequency - Transition 200 MHz
Mounting Type Surface Mount
Package / Case SOT23 (TO-236AB)
Operating Temperature (Tj) -55°C to 150°C

Key Features

  • High collector current of up to 500 mA
  • High current gain (hFE) with a minimum value of 160
  • Low collector-emitter saturation voltage (Vce Sat) of 700 mV
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q102 standards

Applications

The BC 817-25 B5003 is suitable for general AF (amplifier) applications, including:

  • General-purpose switching and amplification
  • Automotive and industrial electronics
  • Consumer and mobile devices
  • Power and computing applications

Q & A

  1. What is the maximum collector current of the BC 817-25 B5003?

    The maximum collector current is 500 mA.

  2. What is the maximum collector-emitter breakdown voltage?

    The maximum collector-emitter breakdown voltage is 45 V.

  3. What is the typical current gain (hFE) of this transistor?

    The minimum current gain (hFE) is 160 at 100 mA and 1 V.

  4. What is the package type of the BC 817-25 B5003?

    The package type is SOT23 (TO-236AB).

  5. Is the BC 817-25 B5003 RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  6. What are the operating temperature ranges for this transistor?

    The operating temperature range is -55°C to 150°C.

  7. What are some common applications for the BC 817-25 B5003?

    It is used in general AF applications, automotive, industrial, consumer, and mobile devices.

  8. What is the maximum power dissipation of the BC 817-25 B5003?

    The maximum power dissipation is 250 mW.

  9. What is the transition frequency of this transistor?

    The transition frequency is 200 MHz.

  10. Is the BC 817-25 B5003 qualified according to any specific standards?

    Yes, it is qualified according to AEC Q102 standards.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC 817-25 B5003 BC 807-25 B5003
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 170MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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