BC817K40WE6327HTSA1
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Infineon Technologies BC817K40WE6327HTSA1

Manufacturer No:
BC817K40WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817K40WE6327HTSA1 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This bipolar junction transistor (BJT) is designed for general AF applications and is known for its high performance and reliability. It is packaged in a surface mount PG-SOT323 format, making it suitable for a wide range of electronic circuits.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Base Voltage (Vceo)45 V
Collector Current (Ic)500 mA
Current Gain (hfe)High current gain
Collector-Emitter Saturation Voltage (Vce(sat))Low
Frequency (fT)170 MHz
Power Dissipation (Pd)250 mW
PackagePG-SOT323 (Surface Mount)
RoHS CompliancePb-free (RoHS compliant)
QualificationQualified according to AEC Q103

Key Features

  • High collector current
  • High current gain
  • Low collector-emitter saturation voltage
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q103

Applications

The BC817K40WE6327HTSA1 is primarily used for general AF (Audio Frequency) applications. Its high performance and reliability make it suitable for a variety of electronic circuits, including audio amplifiers, switching circuits, and other general-purpose transistor applications.

Q & A

  1. What is the collector-base voltage of the BC817K40WE6327HTSA1? The collector-base voltage (Vceo) is 45 V.
  2. What is the maximum collector current of this transistor? The maximum collector current (Ic) is 500 mA.
  3. What is the frequency rating of this transistor? The frequency (fT) is 170 MHz.
  4. Is the BC817K40WE6327HTSA1 RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What is the package type of this transistor? It is packaged in a PG-SOT323 (Surface Mount) format.
  6. What are the primary applications of the BC817K40WE6327HTSA1? It is used for general AF (Audio Frequency) applications.
  7. What is the power dissipation of this transistor? The power dissipation (Pd) is 250 mW.
  8. Is the BC817K40WE6327HTSA1 qualified according to any automotive standards? Yes, it is qualified according to AEC Q103.
  9. What are the key features of the BC817K40WE6327HTSA1? High collector current, high current gain, low collector-emitter saturation voltage, and Pb-free (RoHS compliant) package.
  10. Where can I find detailed specifications for the BC817K40WE6327HTSA1? Detailed specifications can be found on the official Infineon Technologies website, as well as on distributor websites like Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:170MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC817K40WE6327HTSA1 BC817K40E6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 250 mW 500 mW
Frequency - Transition 170MHz 170MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT323 PG-SOT23

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