BCX5410E6327
  • Share:

Infineon Technologies BCX5410E6327

Manufacturer No:
BCX5410E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5410E6327 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This NPN transistor is designed for medium power switching and amplification applications. Although the BCX5410E6327 is currently discontinued and no longer carried by some distributors, it remains relevant for existing designs and legacy systems.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (BVCEO) 45 V
Continuous Collector Current (IC) 1 A
Peak Pulse Current (ICM) 2 A
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V @ IC = 0.5A, IB = 50mA
Package SOT89
Package Material Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0
Terminals Matte Tin Finish Leads
Power Dissipation (PD) 0.55 W
Thermal Resistance, Junction to Ambient Air (RθJA) 225 °C/W
Operating and Storage Temperature Range -55 to +150 °C
ESD Ratings - Human Body Model (HBM) 4000 V

Key Features

  • High Collector-Emitter Breakdown Voltage: Up to 45V, making it suitable for a variety of power applications.
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A, which reduces power losses and improves efficiency.
  • Compact Package: SOT89 package, which is ideal for space-constrained designs.
  • Environmental Compliance: Molded in a “Green” molding compound with UL Flammability Rating 94V-0.
  • High ESD Ratings: Human Body Model (HBM) ESD rating of 4000V, ensuring robustness against electrostatic discharge.

Applications

  • Medium Power Switching: Suitable for applications requiring moderate power handling.
  • Amplification Stages: Can be used in AF driver and output stages due to its low saturation voltage and high current handling.
  • General Purpose Electronics: Applicable in various general-purpose electronic circuits where a reliable NPN transistor is needed.

Q & A

  1. What is the collector-emitter breakdown voltage of the BCX5410E6327?

    The collector-emitter breakdown voltage (BVCEO) is 45V.

  2. What is the continuous collector current rating of the BCX5410E6327?

    The continuous collector current (IC) is 1A.

  3. What is the package type of the BCX5410E6327?

    The package type is SOT89.

  4. What is the thermal resistance, junction to ambient air (RθJA) for the BCX5410E6327?

    The thermal resistance, junction to ambient air (RθJA), is 225°C/W.

  5. What are the operating and storage temperature ranges for the BCX5410E6327?

    The operating and storage temperature ranges are -55 to +150°C.

  6. What is the ESD rating for the BCX5410E6327 according to the Human Body Model (HBM)?

    The ESD rating according to the Human Body Model (HBM) is 4000V.

  7. Is the BCX5410E6327 still available for purchase?

    No, the BCX5410E6327 is currently discontinued and no longer carried by some distributors.

  8. What are typical applications for the BCX5410E6327?

    Typical applications include medium power switching, amplification stages, and general-purpose electronics.

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BCX5410E6327?

    The collector-emitter saturation voltage (VCE(sat)) is less than 500mV @ 0.5A.

  10. What is the peak pulse current (ICM) rating for the BCX5410E6327?

    The peak pulse current (ICM) rating is 2A.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
0 Remaining View Similar

In Stock

-
534

Please send RFQ , we will respond immediately.

Same Series
BCX5416H6327XTSA1
BCX5416H6327XTSA1
TRANS NPN 45V 1A SOT89
BCX5516H6327XTSA1
BCX5516H6327XTSA1
TRANS NPN 60V 1A SOT89
BCX5516H6433XTMA1
BCX5516H6433XTMA1
TRANS NPN 60V 1A SOT89
BCX56H6327XTSA1
BCX56H6327XTSA1
TRANS NPN 80V 1A SOT89
BCX5610H6327XTSA1
BCX5610H6327XTSA1
TRANS NPN 80V 1A SOT89
BCX5410E6327
BCX5410E6327
TRANS NPN 45V 1A SOT89
BCX5516E6433HTMA1
BCX5516E6433HTMA1
TRANS NPN 60V 1A SOT89
BCX55E6327HTSA1
BCX55E6327HTSA1
TRANS NPN 60V 1A SOT89
BCX 55-16 E6327
BCX 55-16 E6327
TRANS NPN 60V 1A SOT-89
BCX56E6327HTSA1
BCX56E6327HTSA1
TRANS NPN 80V 1A SOT89
BCX5616E6327HTSA1
BCX5616E6327HTSA1
TRANS NPN 80V 1A SOT89
BCX56H6359XTMA1
BCX56H6359XTMA1
TRANS NPN 80V 1A SOT89

Similar Products

Part Number BCX5410E6327 BCX5416E6327 BCX5310E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active
Transistor Type NPN - -
Current - Collector (Ic) (Max) 1 A - -
Voltage - Collector Emitter Breakdown (Max) 45 V - -
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA - -
Current - Collector Cutoff (Max) 100nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V - -
Power - Max 2 W - -
Frequency - Transition 100MHz - -
Operating Temperature 150°C (TJ) - -
Mounting Type Surface Mount - -
Package / Case TO-243AA - -
Supplier Device Package PG-SOT89 - -

Related Product By Categories

BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BCP56-10-QX
BCP56-10-QX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAV74
BAV74
Infineon Technologies
RECTIFIER DIODE
BAL74E6327HTSA1
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC847B-E6327
BC847B-E6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I