BCX5410E6327
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Infineon Technologies BCX5410E6327

Manufacturer No:
BCX5410E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX5410E6327 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This NPN transistor is designed for medium power switching and amplification applications. Although the BCX5410E6327 is currently discontinued and no longer carried by some distributors, it remains relevant for existing designs and legacy systems.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (BVCEO) 45 V
Continuous Collector Current (IC) 1 A
Peak Pulse Current (ICM) 2 A
Collector-Emitter Saturation Voltage (VCE(sat)) 0.5 V @ IC = 0.5A, IB = 50mA
Package SOT89
Package Material Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0
Terminals Matte Tin Finish Leads
Power Dissipation (PD) 0.55 W
Thermal Resistance, Junction to Ambient Air (RθJA) 225 °C/W
Operating and Storage Temperature Range -55 to +150 °C
ESD Ratings - Human Body Model (HBM) 4000 V

Key Features

  • High Collector-Emitter Breakdown Voltage: Up to 45V, making it suitable for a variety of power applications.
  • Low Saturation Voltage: VCE(sat) < 500mV @ 0.5A, which reduces power losses and improves efficiency.
  • Compact Package: SOT89 package, which is ideal for space-constrained designs.
  • Environmental Compliance: Molded in a “Green” molding compound with UL Flammability Rating 94V-0.
  • High ESD Ratings: Human Body Model (HBM) ESD rating of 4000V, ensuring robustness against electrostatic discharge.

Applications

  • Medium Power Switching: Suitable for applications requiring moderate power handling.
  • Amplification Stages: Can be used in AF driver and output stages due to its low saturation voltage and high current handling.
  • General Purpose Electronics: Applicable in various general-purpose electronic circuits where a reliable NPN transistor is needed.

Q & A

  1. What is the collector-emitter breakdown voltage of the BCX5410E6327?

    The collector-emitter breakdown voltage (BVCEO) is 45V.

  2. What is the continuous collector current rating of the BCX5410E6327?

    The continuous collector current (IC) is 1A.

  3. What is the package type of the BCX5410E6327?

    The package type is SOT89.

  4. What is the thermal resistance, junction to ambient air (RθJA) for the BCX5410E6327?

    The thermal resistance, junction to ambient air (RθJA), is 225°C/W.

  5. What are the operating and storage temperature ranges for the BCX5410E6327?

    The operating and storage temperature ranges are -55 to +150°C.

  6. What is the ESD rating for the BCX5410E6327 according to the Human Body Model (HBM)?

    The ESD rating according to the Human Body Model (HBM) is 4000V.

  7. Is the BCX5410E6327 still available for purchase?

    No, the BCX5410E6327 is currently discontinued and no longer carried by some distributors.

  8. What are typical applications for the BCX5410E6327?

    Typical applications include medium power switching, amplification stages, and general-purpose electronics.

  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BCX5410E6327?

    The collector-emitter saturation voltage (VCE(sat)) is less than 500mV @ 0.5A.

  10. What is the peak pulse current (ICM) rating for the BCX5410E6327?

    The peak pulse current (ICM) rating is 2A.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX5410E6327 BCX5416E6327 BCX5310E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Active Active
Transistor Type NPN - -
Current - Collector (Ic) (Max) 1 A - -
Voltage - Collector Emitter Breakdown (Max) 45 V - -
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA - -
Current - Collector Cutoff (Max) 100nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V - -
Power - Max 2 W - -
Frequency - Transition 100MHz - -
Operating Temperature 150°C (TJ) - -
Mounting Type Surface Mount - -
Package / Case TO-243AA - -
Supplier Device Package PG-SOT89 - -

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