Overview
The MMBT4124LT1G is a general-purpose NPN silicon transistor manufactured by onsemi. This device is designed to be Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications where environmental considerations are important. The transistor is packaged in a SOT-23 (TO-236) case, which is compact and suitable for surface-mount technology (SMT) assembly.
The MMBT4124LT1G is characterized by its robust electrical and thermal performance, including a collector-emitter voltage (VCEO) of 25 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5.0 V. It also features a continuous collector current (IC) of 200 mA and a total device dissipation of up to 225 mW on an FR-5 board at 25°C.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 25 | Vdc |
| Collector-Base Voltage | VCBO | 30 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Total Device Dissipation (FR-5 Board at 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) | hFE | 120 - 360 | - |
| Collector-Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) | VCE(sat) | 0.3 | Vdc |
| Base-Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) | VBE(sat) | 0.95 | Vdc |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- Compact SOT-23 (TO-236) package suitable for surface-mount technology (SMT) assembly.
- High collector-emitter voltage (VCEO) of 25 V and collector-base voltage (VCBO) of 30 V.
- Continuous collector current (IC) of 200 mA.
- Low thermal resistance, with RJA of 556 °C/W on an FR-5 board.
- Wide operating temperature range from -55°C to +150°C.
- High DC current gain (hFE) ranging from 120 to 360.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
Applications
- General-purpose switching and amplification in electronic circuits.
- Audio and signal processing applications due to its low noise figure and high current gain.
- Automotive and industrial control systems where robustness and reliability are critical.
- Consumer electronics such as home appliances and personal devices.
- Telecommunication equipment and networking devices.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBT4124LT1G?
The maximum collector-emitter voltage (VCEO) is 25 Vdc.
- What is the continuous collector current (IC) rating of the MMBT4124LT1G?
The continuous collector current (IC) is 200 mA.
- What is the thermal resistance (RJA) of the MMBT4124LT1G on an FR-5 board?
The thermal resistance (RJA) on an FR-5 board is 556 °C/W.
- What is the operating temperature range of the MMBT4124LT1G?
The operating temperature range is from -55°C to +150°C.
- Is the MMBT4124LT1G RoHS compliant?
Yes, the MMBT4124LT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) of the MMBT4124LT1G?
The typical DC current gain (hFE) ranges from 120 to 360.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT4124LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.3 Vdc.
- What is the base-emitter saturation voltage (VBE(sat)) of the MMBT4124LT1G?
The base-emitter saturation voltage (VBE(sat)) is 0.95 Vdc.
- In what package is the MMBT4124LT1G available?
The MMBT4124LT1G is available in a SOT-23 (TO-236) package.
- What are some common applications of the MMBT4124LT1G?
Common applications include general-purpose switching, amplification, audio and signal processing, automotive and industrial control systems, and consumer electronics.
