MMBT4126LT1G
  • Share:

onsemi MMBT4126LT1G

Manufacturer No:
MMBT4126LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 25V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT4126LT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low noise and high current gain. It is packaged in a SOT-23-3 surface mount configuration, making it suitable for compact and efficient circuit designs.

Key Specifications

ParameterValue
Transistor TypePNP BJT
Maximum Collector Current200 mA
Maximum Collector-Emitter Voltage25 V
Maximum Power Dissipation225 mW
Transition Frequency250 MHz
Junction and Storage Temperature Range-55 to +150 °C
Package TypeSOT-23-3

Key Features

  • Low noise operation
  • High current gain
  • Compact SOT-23-3 surface mount package
  • Wide operating temperature range (-55 to +150 °C)
  • High transition frequency (250 MHz)

Applications

The MMBT4126LT1G is versatile and can be used in various applications such as audio amplifiers, switching circuits, and general-purpose amplification. It is particularly suitable for designs requiring low noise and high reliability in compact form factors.

Q & A

  1. What is the maximum collector current of the MMBT4126LT1G? The maximum collector current is 200 mA.
  2. What is the maximum collector-emitter voltage of the MMBT4126LT1G? The maximum collector-emitter voltage is 25 V.
  3. What is the package type of the MMBT4126LT1G? The package type is SOT-23-3.
  4. What is the transition frequency of the MMBT4126LT1G? The transition frequency is 250 MHz.
  5. What is the junction and storage temperature range of the MMBT4126LT1G? The junction and storage temperature range is -55 to +150 °C.
  6. Is the MMBT4126LT1G suitable for high-frequency applications? Yes, with a transition frequency of 250 MHz, it is suitable for high-frequency applications.
  7. What are some common applications of the MMBT4126LT1G? Common applications include audio amplifiers, switching circuits, and general-purpose amplification.
  8. Why is the MMBT4126LT1G preferred in compact designs? It is preferred due to its compact SOT-23-3 surface mount package.
  9. Does the MMBT4126LT1G operate with low noise? Yes, it is designed for low noise operation.
  10. Where can I find detailed specifications for the MMBT4126LT1G? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 1V
Power - Max:225 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.32
1,802

Please send RFQ , we will respond immediately.

Same Series
MMBT4126LT3G
MMBT4126LT3G
TRANS PNP 25V 0.2A SOT23-3
MMBT4126LT1
MMBT4126LT1
TRANS SS GP PNP 25V SOT23

Similar Products

Part Number MMBT4126LT1G MMBT4126LT3G MMBT4124LT1G MMBT4126LT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP PNP NPN -
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA -
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) - - 50nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 1V 120 @ 2mA, 1V 120 @ 2mA, 1V -
Power - Max 225 mW 225 mW 225 mW -
Frequency - Transition 250MHz 250MHz 300MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

BCX56-16,115
BCX56-16,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCX56-10TX
BCX56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC859CLT1
BC859CLT1
onsemi
TRANS PNP 30V 0.1A SOT23-3
BC857CW/DG/B4F
BC857CW/DG/B4F
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
BD679G
BD679G
onsemi
TRANS NPN DARL 80V 4A TO126
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD