Overview
The BCP5310H6327XTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for use in audio frequency (AF) driver and output stages. It features high collector current, low collector-emitter saturation voltage, and is packaged in a surface-mount SOT223 format, which enhances thermal performance and saves space on PCB layouts.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCEO | 80 | V |
| Collector-base voltage | VCBO | 100 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 1 | A |
| Peak collector current (tp ≤ 10 ms) | ICM | 1.5 | A |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | mA |
| Total power dissipation (TS ≤ 120°C) | Ptot | 2 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 to 150 | °C |
| Thermal Resistance (Junction - soldering point) | RthJS | ≤ 15 | K/W |
| DC current gain (hFE) at IC = 150 mA, VCE = 2 V | hFE | 63 | |
| Collector-emitter saturation voltage at IC = 500 mA, IB = 50 mA | VCEsat | 0.5 | V |
| Transition frequency at IC = 50 mA, VCE = 10 V | fT | 125 | MHz |
Key Features
- High collector current of up to 1 A and peak collector current of 1.5 A (tp ≤ 10 ms)
- Low collector-emitter saturation voltage (VCEsat) of 0.5 V at IC = 500 mA, IB = 50 mA
- High DC current gain (hFE) with a minimum value of 63 at IC = 150 mA, VCE = 2 V
- Surface-mount SOT223 package for improved thermal performance and space-saving on PCB layouts
- Pb-free (RoHS compliant) and halogen-free package
- Qualified according to AEC Q101 standards
- Robust thermal management capabilities with a junction temperature of up to 150°C
- Stable operation through a wide range of temperatures from -65°C to 150°C
Applications
- AUDIO frequency (AF) driver and output stages
- Power management applications within consumer electronics
- Automotive systems requiring high reliability and efficiency
- Industrial equipment where robust thermal management is crucial
Q & A
- What is the collector-emitter voltage rating of the BCP5310H6327XTSA1 transistor?
The collector-emitter voltage (VCEO) is rated at 80 V.
- What is the maximum collector current of the BCP5310H6327XTSA1 transistor?
The maximum collector current (IC) is 1 A.
- What is the peak collector current of the BCP5310H6327XTSA1 transistor for a pulse duration of less than 10 ms?
The peak collector current (ICM) is 1.5 A for tp ≤ 10 ms.
- What is the DC current gain (hFE) of the BCP5310H6327XTSA1 transistor at IC = 150 mA and VCE = 2 V?
The DC current gain (hFE) is 63 at IC = 150 mA and VCE = 2 V.
- What is the collector-emitter saturation voltage (VCEsat) of the BCP5310H6327XTSA1 transistor?
The collector-emitter saturation voltage (VCEsat) is 0.5 V at IC = 500 mA and IB = 50 mA.
- What is the transition frequency (fT) of the BCP5310H6327XTSA1 transistor?
The transition frequency (fT) is 125 MHz at IC = 50 mA and VCE = 10 V.
- What is the package type of the BCP5310H6327XTSA1 transistor?
The transistor is packaged in a surface-mount SOT223 format.
- Is the BCP5310H6327XTSA1 transistor Pb-free and RoHS compliant?
Yes, the transistor is Pb-free and RoHS compliant.
- What are the typical applications of the BCP5310H6327XTSA1 transistor?
The transistor is typically used in AF driver and output stages, power management in consumer electronics, automotive systems, and industrial equipment.
- What is the junction temperature rating of the BCP5310H6327XTSA1 transistor?
The junction temperature rating is up to 150°C.
- Is the BCP5310H6327XTSA1 transistor qualified according to any specific standards?
Yes, it is qualified according to AEC Q101 standards.
