BCP5316H6327XTSA1
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Infineon Technologies BCP5316H6327XTSA1

Manufacturer No:
BCP5316H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5316H6327XTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This component is a PNP transistor, designed to operate within specific voltage and current parameters, making it suitable for a variety of electronic applications. The transistor is packaged in a SOT223-4 package, which is compact and suitable for surface-mount technology (SMT) assembly.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Peak Collector Current (ICM), tp ≤ 10 ms 1.5 A
Base Current (IB) - A
Package Type SOT223-4 -

Key Features

  • PNP Transistor: The BCP5316H6327XTSA1 is a PNP bipolar junction transistor, suitable for applications requiring this type of transistor.
  • High Voltage and Current Capability: It can handle a collector-base voltage of up to 60V and a collector current of up to 1A, with a peak collector current of 1.5A for short durations.
  • Compact Packaging: The SOT223-4 package is compact and designed for surface-mount technology, making it ideal for modern electronic designs where space is limited.
  • RoHS Compliance: The component is compliant with the EU Directive 2011/65/EU (RoHS), ensuring it meets environmental standards for lead-free and hazardous substance-free electronics.

Applications

  • General Purpose Amplification: Suitable for general-purpose amplification in various electronic circuits.
  • Switching Applications: Can be used in switching circuits due to its high current and voltage handling capabilities.
  • Automotive and Industrial Electronics: Often used in automotive and industrial electronics where reliability and robustness are crucial.
  • Consumer Electronics: Found in consumer electronics such as audio equipment, power supplies, and other devices requiring reliable transistor performance.

Q & A

  1. What is the collector-base voltage (VCBO) of the BCP5316H6327XTSA1?

    The collector-base voltage (VCBO) is 60V.

  2. What is the maximum collector current (IC) for this transistor?

    The maximum collector current (IC) is 1A.

  3. What is the peak collector current (ICM) for short durations?

    The peak collector current (ICM) for durations of tp ≤ 10 ms is 1.5A).

  4. What type of package does the BCP5316H6327XTSA1 use?

    The transistor is packaged in a SOT223-4 package).

  5. Is the BCP5316H6327XTSA1 RoHS compliant?

    Yes, it is compliant with the EU Directive 2011/65/EU (RoHS)).

  6. What are common applications for this transistor?

    Common applications include general-purpose amplification, switching applications, automotive and industrial electronics, and consumer electronics).

  7. What is the emitter-base voltage (VEBO) for this transistor?

    The emitter-base voltage (VEBO) is 5V).

  8. Can this transistor be used in high-power applications?

    While it can handle significant current and voltage, it is generally used in medium to low-power applications due to its specifications).

  9. Is the BCP5316H6327XTSA1 suitable for surface-mount technology (SMT)?

    Yes, the SOT223-4 package is designed for SMT assembly).

  10. Where can I find detailed material content information for the BCP5316H6327XTSA1?

    Detailed material content information can be found in the Material Content Data Sheet provided by Infineon Technologies).

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-24
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Similar Products

Part Number BCP5316H6327XTSA1 BCP5416H6327XTSA1 BCP5516H6327XTSA1 BCP5616H6327XTSA1 BCP5116H6327XTSA1 BCP5216H6327XTSA1 BCP5310H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP NPN NPN NPN PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 60 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 100MHz 100MHz 125MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-24 PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-24 PG-SOT223-4-10 PG-SOT223-4-10

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