BCP5316E6433HTMA1
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Infineon Technologies BCP5316E6433HTMA1

Manufacturer No:
BCP5316E6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 80V 1A SOT223-4
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The BCP5316E6433HTMA1 is a high-performance bipolar junction transistor (BJT) manufactured by Infineon Technologies. This PNP transistor is designed for a variety of applications requiring high current and frequency capabilities. It is part of Infineon's extensive range of semiconductor solutions that aim to make life easier, safer, and greener.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vceo)80 V
Maximum Collector Current (Ic)1 A
Transition Frequency (fT)125 MHz
Maximum Power Dissipation (Pd)2 W
Package TypePG-SOT223-4 (Surface Mount)
Mounting TypeSurface Mount

Key Features

  • High transition frequency of 125 MHz, making it suitable for high-frequency applications.
  • Maximum collector current of 1 A and maximum collector-emitter voltage of 80 V, providing robust performance.
  • Low power dissipation of 2 W, contributing to energy efficiency.
  • Surface mount package (PG-SOT223-4) for easy integration into modern PCB designs.

Applications

The BCP5316E6433HTMA1 is versatile and can be used in various applications, including:

  • Amplifier circuits: Due to its high current and frequency capabilities, it is suitable for audio and RF amplifiers.
  • Switching circuits: Its high transition frequency makes it ideal for switching applications in power supplies and motor control systems.
  • Automotive electronics: It can be used in automotive systems requiring high reliability and performance.
  • Industrial control systems: Suitable for use in industrial automation and control systems where high current and frequency are necessary.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP5316E6433HTMA1?
    The maximum collector-emitter voltage is 80 V.
  2. What is the transition frequency of this transistor?
    The transition frequency is 125 MHz.
  3. What is the maximum collector current of the BCP5316E6433HTMA1?
    The maximum collector current is 1 A.
  4. What is the package type of the BCP5316E6433HTMA1?
    The package type is PG-SOT223-4 (Surface Mount).
  5. What is the maximum power dissipation of this transistor?
    The maximum power dissipation is 2 W.
  6. What are some common applications for the BCP5316E6433HTMA1?
    Common applications include amplifier circuits, switching circuits, automotive electronics, and industrial control systems.
  7. Who is the manufacturer of the BCP5316E6433HTMA1?
    The manufacturer is Infineon Technologies.
  8. What type of transistor is the BCP5316E6433HTMA1?
    The BCP5316E6433HTMA1 is a PNP bipolar junction transistor (BJT).
  9. Why is the BCP5316E6433HTMA1 suitable for high-frequency applications?
    It is suitable due to its high transition frequency of 125 MHz.
  10. What is the mounting type of the BCP5316E6433HTMA1?
    The mounting type is surface mount.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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Similar Products

Part Number BCP5316E6433HTMA1 BCP5416E6433HTMA1 BCP5116E6433HTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type PNP NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 125MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4 PG-SOT223-4

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