IKW50N60TAFKSA1
  • Share:

Infineon Technologies IKW50N60TAFKSA1

Manufacturer No:
IKW50N60TAFKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT TRENCH/FS 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60TAFKSA1 is an Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This component is part of the TRENCHSTOP™ and Fieldstop technology series, designed for high-performance applications requiring low losses and high ruggedness. The IKW50N60TAFKSA1 is known for its very low collector-emitter saturation voltage (VCE(sat)) and high junction temperature tolerance, making it suitable for a variety of power management and conversion tasks.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25°C VCE 600 V
DC collector current, limited by Tjmax at TC = 25°C IC 50 A
Pulsed collector current, tp limited by Tjmax IC(puls) 150 A
Diode forward current, limited by Tjmax at TC = 25°C IF 100 A
Diode pulsed current, tp limited by Tjmax IF(puls) 150 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time tSC 5 μs
Power dissipation at TC = 25°C Ptot 333 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -40...+150 °C

Key Features

  • Very low collector-emitter saturation voltage (VCE(sat)) of 1.5V (typ.)
  • Maximum junction temperature of 175°C
  • Short circuit withstand time of 5 μs
  • TRENCHSTOP™ and Fieldstop technology for 600V applications, offering tight parameter distribution, high ruggedness, and temperature-stable behavior
  • Positive temperature coefficient in VCE(sat)
  • Low EMI and low gate charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant

Applications

The IKW50N60TAFKSA1 is designed for various high-power applications, including:

  • Frequency converters
  • Uninterrupted Power Supplies (UPS)
  • Other high-performance power management and conversion systems

Note: For life-support devices or systems, automotive, aviation, and aerospace applications, express written approval from Infineon Technologies is required if component failure could reasonably be expected to cause the failure of such devices or systems or affect their safety or effectiveness.

Q & A

  1. What is the collector-emitter voltage rating of the IKW50N60TAFKSA1?

    The collector-emitter voltage rating is 600V.

  2. What is the maximum DC collector current for the IKW50N60TAFKSA1 at 25°C?

    The maximum DC collector current is 50A.

  3. What is the short circuit withstand time of the IKW50N60TAFKSA1?

    The short circuit withstand time is 5 μs.

  4. What technology does the IKW50N60TAFKSA1 use?

    The IKW50N60TAFKSA1 uses TRENCHSTOP™ and Fieldstop technology.

  5. What are the typical applications for the IKW50N60TAFKSA1?

    Typical applications include frequency converters and uninterrupted power supplies (UPS).

  6. Is the IKW50N60TAFKSA1 RoHS compliant?
  7. What is the maximum junction temperature for the IKW50N60TAFKSA1?
  8. What is the power dissipation rating at 25°C for the IKW50N60TAFKSA1?
  9. Does the IKW50N60TAFKSA1 have a soft recovery diode?
  10. Is the IKW50N60TAFKSA1 qualified according to JEDEC standards?

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
Power - Max:333 W
Switching Energy:2.6mJ
Input Type:Standard
Gate Charge:310 nC
Td (on/off) @ 25°C:26ns/299ns
Test Condition:400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr):143 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
0 Remaining View Similar

In Stock

-
465

Please send RFQ , we will respond immediately.

Same Series
IKW50N60TAFKSA1
IKW50N60TAFKSA1
IGBT TRENCH/FS 600V 80A TO247-3

Similar Products

Part Number IKW50N60TAFKSA1 IKW50N60TFKSA1 IKW20N60TAFKSA1 IKW30N60TAFKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 80 A 40 A 60 A
Current - Collector Pulsed (Icm) 150 A 150 A 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A 2V @ 15V, 50A 2.05V @ 15V, 20A 2.05V @ 15V, 30A
Power - Max 333 W 333 W 166 W 187 W
Switching Energy 2.6mJ 2.6mJ 770µJ 1.46mJ
Input Type Standard Standard Standard Standard
Gate Charge 310 nC 310 nC 120 nC 167 nC
Td (on/off) @ 25°C 26ns/299ns 26ns/299ns 18ns/199ns 23ns/254ns
Test Condition 400V, 50A, 7Ohm, 15V 400V, 50A, 7Ohm, 15V 400V, 20A, 12Ohm, 15V 400V, 30A, 10.6Ohm, 15V
Reverse Recovery Time (trr) 143 ns 143 ns 41 ns 143 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) - -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-21

Related Product By Categories

FGA20N120FTDTU
FGA20N120FTDTU
onsemi
IGBT 1200V 40A 298W TO3PN
FGH40N60UFDTU
FGH40N60UFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGW20H60DF
STGW20H60DF
STMicroelectronics
IGBT 600V 40A 167W TO247
STGB19NC60KDT4
STGB19NC60KDT4
STMicroelectronics
IGBT 600V 35A 125W D2PAK
STGW40NC60KD
STGW40NC60KD
STMicroelectronics
IGBT 600V 70A 250W TO247
STGWT60H65DFB
STGWT60H65DFB
STMicroelectronics
IGBT 650V 80A 375W TO3P-3L
FGH75T65SHDT-F155
FGH75T65SHDT-F155
onsemi
IGBT 650V 150A 455W TO-247
FGH40T120SMD
FGH40T120SMD
onsemi
IGBT TRENCH/FS 1200V 80A TO247-3
STGD6M65DF2
STGD6M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
NGD18N40ACLBT4G
NGD18N40ACLBT4G
Littelfuse Inc.
IGBT 430V 15A 115W DPAK-3
FGH75T65SQDT_F155
FGH75T65SQDT_F155
onsemi
650V FS4 TRENCH IGBT

Related Product By Brand

BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
BAS16E6393HTSA1
BAS16E6393HTSA1
Infineon Technologies
DIODE GP 80V 250MA SOT23-3
BC859-C
BC859-C
Infineon Technologies
TRANS PNP 30V 0.1A SOT23-3
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BC817K40E6359HTMA1
BC817K40E6359HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF7240TRPBF
IRF7240TRPBF
Infineon Technologies
MOSFET P-CH 40V 10.5A 8SO
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
SAK-TC1796-256F150EBE
SAK-TC1796-256F150EBE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416PBGA
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN