IKW50N60TAFKSA1
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Infineon Technologies IKW50N60TAFKSA1

Manufacturer No:
IKW50N60TAFKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT TRENCH/FS 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60TAFKSA1 is an Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This component is part of the TRENCHSTOP™ and Fieldstop technology series, designed for high-performance applications requiring low losses and high ruggedness. The IKW50N60TAFKSA1 is known for its very low collector-emitter saturation voltage (VCE(sat)) and high junction temperature tolerance, making it suitable for a variety of power management and conversion tasks.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25°C VCE 600 V
DC collector current, limited by Tjmax at TC = 25°C IC 50 A
Pulsed collector current, tp limited by Tjmax IC(puls) 150 A
Diode forward current, limited by Tjmax at TC = 25°C IF 100 A
Diode pulsed current, tp limited by Tjmax IF(puls) 150 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time tSC 5 μs
Power dissipation at TC = 25°C Ptot 333 W
Operating junction temperature Tj -40...+175 °C
Storage temperature Tstg -40...+150 °C

Key Features

  • Very low collector-emitter saturation voltage (VCE(sat)) of 1.5V (typ.)
  • Maximum junction temperature of 175°C
  • Short circuit withstand time of 5 μs
  • TRENCHSTOP™ and Fieldstop technology for 600V applications, offering tight parameter distribution, high ruggedness, and temperature-stable behavior
  • Positive temperature coefficient in VCE(sat)
  • Low EMI and low gate charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant

Applications

The IKW50N60TAFKSA1 is designed for various high-power applications, including:

  • Frequency converters
  • Uninterrupted Power Supplies (UPS)
  • Other high-performance power management and conversion systems

Note: For life-support devices or systems, automotive, aviation, and aerospace applications, express written approval from Infineon Technologies is required if component failure could reasonably be expected to cause the failure of such devices or systems or affect their safety or effectiveness.

Q & A

  1. What is the collector-emitter voltage rating of the IKW50N60TAFKSA1?

    The collector-emitter voltage rating is 600V.

  2. What is the maximum DC collector current for the IKW50N60TAFKSA1 at 25°C?

    The maximum DC collector current is 50A.

  3. What is the short circuit withstand time of the IKW50N60TAFKSA1?

    The short circuit withstand time is 5 μs.

  4. What technology does the IKW50N60TAFKSA1 use?

    The IKW50N60TAFKSA1 uses TRENCHSTOP™ and Fieldstop technology.

  5. What are the typical applications for the IKW50N60TAFKSA1?

    Typical applications include frequency converters and uninterrupted power supplies (UPS).

  6. Is the IKW50N60TAFKSA1 RoHS compliant?
  7. What is the maximum junction temperature for the IKW50N60TAFKSA1?
  8. What is the power dissipation rating at 25°C for the IKW50N60TAFKSA1?
  9. Does the IKW50N60TAFKSA1 have a soft recovery diode?
  10. Is the IKW50N60TAFKSA1 qualified according to JEDEC standards?

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
Power - Max:333 W
Switching Energy:2.6mJ
Input Type:Standard
Gate Charge:310 nC
Td (on/off) @ 25°C:26ns/299ns
Test Condition:400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr):143 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
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Same Series
IKW50N60TAFKSA1
IKW50N60TAFKSA1
IGBT TRENCH/FS 600V 80A TO247-3

Similar Products

Part Number IKW50N60TAFKSA1 IKW50N60TFKSA1 IKW20N60TAFKSA1 IKW30N60TAFKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 80 A 40 A 60 A
Current - Collector Pulsed (Icm) 150 A 150 A 60 A 90 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A 2V @ 15V, 50A 2.05V @ 15V, 20A 2.05V @ 15V, 30A
Power - Max 333 W 333 W 166 W 187 W
Switching Energy 2.6mJ 2.6mJ 770µJ 1.46mJ
Input Type Standard Standard Standard Standard
Gate Charge 310 nC 310 nC 120 nC 167 nC
Td (on/off) @ 25°C 26ns/299ns 26ns/299ns 18ns/199ns 23ns/254ns
Test Condition 400V, 50A, 7Ohm, 15V 400V, 50A, 7Ohm, 15V 400V, 20A, 12Ohm, 15V 400V, 30A, 10.6Ohm, 15V
Reverse Recovery Time (trr) 143 ns 143 ns 41 ns 143 ns
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) - -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-21

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