Overview
The FGY160T65SPD-F085 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is part of the FGY160T65S_F085 series and is designed for automotive and high-reliability applications. It features a field stop, trench structure with a soft fast recovery diode, making it suitable for demanding power switching requirements.
The IGBT is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. It offers very low saturation voltage and high current handling capabilities, making it an ideal choice for various power management and control systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Collector Current (Ic) | 160 A (Typ.), 240 A (Max.) | A |
| Voltage - Collector Emitter Breakdown (Vce) | 650 V | V |
| Saturation Voltage (Vce(sat)) | 1.6 V (Typ.) @ IC = 160 A | V |
| Maximum Junction Temperature (Tj) | 175°C | °C |
| Minimum Operating Temperature | -55°C | °C |
| Power Dissipation (Pd) | 882 W | W |
Key Features
- AEC-Q101 qualified and PPAP capable for automotive applications.
- Field stop, trench structure with soft fast recovery diode.
- Very low saturation voltage (Vce(sat) = 1.6 V @ IC = 160 A).
- High current handling capability (up to 240 A).
- High maximum junction temperature (175°C).
- Broad operating temperature range (-55°C to 175°C).
Applications
- Automotive systems, including electric vehicles and hybrid vehicles.
- Power management and control systems.
- Industrial power supplies and motor drives.
- Renewable energy systems, such as solar and wind power.
- High-reliability power switching applications.
Q & A
- What is the maximum collector current of the FGY160T65SPD-F085 IGBT?
The maximum collector current is 240 A.
- What is the voltage - collector emitter breakdown of this IGBT?
The voltage - collector emitter breakdown is 650 V.
- What is the typical saturation voltage of the FGY160T65SPD-F085 at 160 A?
The typical saturation voltage is 1.6 V at 160 A.
- What is the maximum junction temperature of this device?
The maximum junction temperature is 175°C.
- Is the FGY160T65SPD-F085 qualified for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the minimum operating temperature of the FGY160T65SPD-F085?
The minimum operating temperature is -55°C.
- What is the power dissipation capability of this IGBT?
The power dissipation capability is 882 W.
- In what types of applications is the FGY160T65SPD-F085 commonly used?
It is commonly used in automotive systems, power management and control systems, industrial power supplies, and renewable energy systems.
- What is the structure of the FGY160T65SPD-F085 IGBT?
The IGBT features a field stop, trench structure with a soft fast recovery diode.
- Where can I find detailed specifications for the FGY160T65SPD-F085?
Detailed specifications can be found in the datasheet available on the onsemi website, as well as on distributor websites like Mouser and Octopart.
