IKW50N60TA
  • Share:

Infineon Technologies IKW50N60TA

Manufacturer No:
IKW50N60TA
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IKW50N60 - AUTOMOTIVE IGBT DISCR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60TA is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This component is part of the TRENCHSTOP™ series, which is known for its advanced technology and robust performance. The IKW50N60TA is designed to meet the demands of high-power applications, offering low losses, high ruggedness, and stable behavior over a wide temperature range.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current at TC = 25°C IC 50 A
Pulsed collector current, limited by Tjmax IC(puls) 150 A
Diode forward current at TC = 25°C IF 100 A
Diode pulsed current, limited by Tjmax IF(puls) 150 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time tSC 5 μs
Power dissipation at TC = 25°C Ptot 333 W
Operating junction temperature Tj -40 to +175 °C
Storage temperature Tstg -40 to +150 °C

Key Features

  • Very low VCE(sat): 1.5V (typ.) at Tj = 25°C, ensuring low conduction losses.
  • High Junction Temperature: Maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
  • Short Circuit Withstand Time: 5 μs, providing robustness against short circuit conditions.
  • TRENCHSTOP™ and Fieldstop Technology: Offers very tight parameter distribution, high ruggedness, and temperature-stable behavior.
  • Soft, Fast Recovery Diode: Anti-parallel emitter-controlled HE diode with very soft and fast recovery characteristics.
  • Low EMI and Gate Charge: Designed to minimize electromagnetic interference and gate charge, enhancing overall system efficiency.
  • Pb-free and RoHS Compliant: Lead-free lead plating, ensuring compliance with environmental regulations.

Applications

  • Frequency Converters: Suitable for high-frequency applications due to its high switching speed and low losses.
  • Uninterrupted Power Supply (UPS): Ideal for UPS systems requiring high reliability and efficiency.
  • Industrial Power Systems: Used in various industrial power systems where high power handling and reliability are crucial.
  • Automotive and Aerospace: Can be used in automotive and aerospace applications with express written approval from Infineon Technologies, given the critical nature of these systems.

Q & A

  1. What is the maximum collector-emitter voltage of the IKW50N60TA?

    The maximum collector-emitter voltage is 600V.

  2. What is the typical collector-emitter saturation voltage at Tj = 25°C?

    The typical collector-emitter saturation voltage is 1.5V.

  3. What is the maximum junction temperature for the IKW50N60TA?

    The maximum junction temperature is 175°C.

  4. How long can the IKW50N60TA withstand a short circuit?

    The IKW50N60TA can withstand a short circuit for 5 μs.

  5. What technology is used in the IKW50N60TA?

    The IKW50N60TA uses TRENCHSTOP™ and Fieldstop technology.

  6. Is the IKW50N60TA RoHS compliant?

    Yes, the IKW50N60TA is Pb-free and RoHS compliant.

  7. What are the typical applications for the IKW50N60TA?

    Typical applications include frequency converters, uninterrupted power supply (UPS), and industrial power systems.

  8. Can the IKW50N60TA be used in life-support devices or systems?

    No, it cannot be used in life-support devices or systems without express written approval from Infineon Technologies).

  9. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation is 333W).

  10. What is the storage temperature range for the IKW50N60TA?

    The storage temperature range is -40 to +150°C).

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE0/AA
DD26M20HE0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number IKW50N60TA IKW20N60TA IKW50N60T
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) - - -
Vce(on) (Max) @ Vge, Ic - - -
Power - Max - - -
Switching Energy - - -
Input Type - - -
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

Related Product By Categories

FGH40N60SMDF
FGH40N60SMDF
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGB15M65DF2
STGB15M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
AFGB40T65SQDN
AFGB40T65SQDN
onsemi
650V/40A FS4 IGBT TO263 A
FGY75T120SQDN
FGY75T120SQDN
onsemi
IGBT 1200V 75A UFS
FGH25T120SMD-F155
FGH25T120SMD-F155
onsemi
IGBT 1200V 50A 428W TO247-3
STGB20M65DF2
STGB20M65DF2
STMicroelectronics
IGBT TRENCH 650V 40A D2PAK
ISL9V5045S3ST-F085C
ISL9V5045S3ST-F085C
onsemi
ECOSPARK1 IGN-IGBT TO263
STGWT80H65DFB
STGWT80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
FGH75T65UPD-F085
FGH75T65UPD-F085
onsemi
IGBT 650V 150A 375W TO-247AB
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
STGFW40V60DF
STGFW40V60DF
STMicroelectronics
IGBT 600V 80A 62.5W TO-3PF
FGH40T65SQD-F155
FGH40T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 80A TO247-3

Related Product By Brand

BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BFR93AE6327HTSA1
BFR93AE6327HTSA1
Infineon Technologies
RF TRANS NPN 12V 6GHZ SOT23-3
BC850CE6327
BC850CE6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
BTS428L2XT
BTS428L2XT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
AUIR3315STRL
AUIR3315STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30