IKW50N60TA
  • Share:

Infineon Technologies IKW50N60TA

Manufacturer No:
IKW50N60TA
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IKW50N60 - AUTOMOTIVE IGBT DISCR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60TA is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This component is part of the TRENCHSTOP™ series, which is known for its advanced technology and robust performance. The IKW50N60TA is designed to meet the demands of high-power applications, offering low losses, high ruggedness, and stable behavior over a wide temperature range.

Key Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current at TC = 25°C IC 50 A
Pulsed collector current, limited by Tjmax IC(puls) 150 A
Diode forward current at TC = 25°C IF 100 A
Diode pulsed current, limited by Tjmax IF(puls) 150 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time tSC 5 μs
Power dissipation at TC = 25°C Ptot 333 W
Operating junction temperature Tj -40 to +175 °C
Storage temperature Tstg -40 to +150 °C

Key Features

  • Very low VCE(sat): 1.5V (typ.) at Tj = 25°C, ensuring low conduction losses.
  • High Junction Temperature: Maximum junction temperature of 175°C, allowing for reliable operation in demanding environments.
  • Short Circuit Withstand Time: 5 μs, providing robustness against short circuit conditions.
  • TRENCHSTOP™ and Fieldstop Technology: Offers very tight parameter distribution, high ruggedness, and temperature-stable behavior.
  • Soft, Fast Recovery Diode: Anti-parallel emitter-controlled HE diode with very soft and fast recovery characteristics.
  • Low EMI and Gate Charge: Designed to minimize electromagnetic interference and gate charge, enhancing overall system efficiency.
  • Pb-free and RoHS Compliant: Lead-free lead plating, ensuring compliance with environmental regulations.

Applications

  • Frequency Converters: Suitable for high-frequency applications due to its high switching speed and low losses.
  • Uninterrupted Power Supply (UPS): Ideal for UPS systems requiring high reliability and efficiency.
  • Industrial Power Systems: Used in various industrial power systems where high power handling and reliability are crucial.
  • Automotive and Aerospace: Can be used in automotive and aerospace applications with express written approval from Infineon Technologies, given the critical nature of these systems.

Q & A

  1. What is the maximum collector-emitter voltage of the IKW50N60TA?

    The maximum collector-emitter voltage is 600V.

  2. What is the typical collector-emitter saturation voltage at Tj = 25°C?

    The typical collector-emitter saturation voltage is 1.5V.

  3. What is the maximum junction temperature for the IKW50N60TA?

    The maximum junction temperature is 175°C.

  4. How long can the IKW50N60TA withstand a short circuit?

    The IKW50N60TA can withstand a short circuit for 5 μs.

  5. What technology is used in the IKW50N60TA?

    The IKW50N60TA uses TRENCHSTOP™ and Fieldstop technology.

  6. Is the IKW50N60TA RoHS compliant?

    Yes, the IKW50N60TA is Pb-free and RoHS compliant.

  7. What are the typical applications for the IKW50N60TA?

    Typical applications include frequency converters, uninterrupted power supply (UPS), and industrial power systems.

  8. Can the IKW50N60TA be used in life-support devices or systems?

    No, it cannot be used in life-support devices or systems without express written approval from Infineon Technologies).

  9. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation is 333W).

  10. What is the storage temperature range for the IKW50N60TA?

    The storage temperature range is -40 to +150°C).

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
250

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number IKW50N60TA IKW20N60TA IKW50N60T
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Current - Collector (Ic) (Max) - - -
Current - Collector Pulsed (Icm) - - -
Vce(on) (Max) @ Vge, Ic - - -
Power - Max - - -
Switching Energy - - -
Input Type - - -
Gate Charge - - -
Td (on/off) @ 25°C - - -
Test Condition - - -
Reverse Recovery Time (trr) - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

Related Product By Categories

FGD3245G2-F085
FGD3245G2-F085
onsemi
IGBT 450V 23A TO252AA
STGW20V60DF
STGW20V60DF
STMicroelectronics
IGBT 600V 40A 167W TO247
STGB10NC60HDT4
STGB10NC60HDT4
STMicroelectronics
IGBT 600V 20A 65W D2PAK
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109
onsemi
IGBT 1200V 50A 312W TO3P
STGW40NC60KD
STGW40NC60KD
STMicroelectronics
IGBT 600V 70A 250W TO247
NGTB15N120FL2WG
NGTB15N120FL2WG
onsemi
IGBT 1200V 15A SOLAR/UPS TO247
STGW35HF60WDI
STGW35HF60WDI
STMicroelectronics
IGBT 600V 60A 200W TO-247
STGWT28IH125DF
STGWT28IH125DF
STMicroelectronics
IGBT 1250V 60A 375W TO-3P
STGW60H65DFB
STGW60H65DFB
STMicroelectronics
IGBT 650V 80A 375W TO-247
FGL60N100BNTDTU
FGL60N100BNTDTU
onsemi
IGBT 1000V 60A 180W TO264
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STGB10NB37LZ
STGB10NB37LZ
STMicroelectronics
IGBT 440V 20A 125W D2PAK

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS 40-04 B5003
BAS 40-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
CYUSB3014-BZXI
CYUSB3014-BZXI
Infineon Technologies
IC ARM9 USB CONTROLLER 121FBGA
FM25L16B-GTR
FM25L16B-GTR
Infineon Technologies
IC FRAM 16KBIT SPI 20MHZ 8SOIC