Overview
The FGY75T120SQDN is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is designed to meet the demands of high-power applications, featuring a co-packaged free-wheeling diode with low forward voltage. It is particularly well-suited for applications such as Uninterruptible Power Supplies (UPS) and solar power systems.
Key Specifications
| Parameter | Value |
|---|---|
| Type Designator | FGY75T120SQDN |
| Type | IGBT + Anti-Parallel Diode |
| Type of IGBT Channel | N |
| Maximum Power Dissipation (Pc), W | 790 |
| Maximum Collector-Emitter Voltage |Vce|, V | 1200 |
| Maximum Gate-Emitter Voltage |Vge|, V | -20 to 20 |
| Maximum Collector Current |Ic| @25℃, A | 150 |
| Collector-Emitter Saturation Voltage |VCE(sat)|, typ, V | 1.7 |
| Maximum G-E Threshold Voltage |VGE(th)|, V | 6.5 |
| Maximum Junction Temperature (Tj), ℃ | 175 |
| Rise Time (tr), typ, nS | 96 |
| Collector Capacity (Cc), typ, pF | 242 |
| Total Gate Charge (Qg), typ, nC | 399 |
| Package | TO247 |
Key Features
- High current handling capability of up to 150 A at 25℃.
- Maximum collector-emitter voltage of 1200 V, making it suitable for high-voltage applications.
- Co-packaged free-wheeling diode with low forward voltage, enhancing efficiency and reducing losses.
- Low collector-emitter saturation voltage (VCE(sat)) of 1.7 V, contributing to lower power losses.
- High maximum junction temperature of 175℃, ensuring reliability in demanding environments.
Applications
The FGY75T120SQDN IGBT is particularly suited for high-power applications such as:
- Uninterruptible Power Supplies (UPS): Ensuring continuous power supply in critical systems.
- Solar Power Systems: Efficiently managing power in solar inverters and other solar-related equipment.
- Industrial Power Conversion: Used in various industrial power conversion applications requiring high reliability and efficiency.
Q & A
- What is the maximum collector-emitter voltage of the FGY75T120SQDN IGBT?
The maximum collector-emitter voltage is 1200 V. - What is the maximum collector current of the FGY75T120SQDN at 25℃?
The maximum collector current is 150 A. - What type of diode is co-packaged with the FGY75T120SQDN IGBT?
A free-wheeling diode with low forward voltage. - What is the maximum junction temperature of the FGY75T120SQDN?
The maximum junction temperature is 175℃. - In what package is the FGY75T120SQDN available?
The FGY75T120SQDN is available in the TO247 package. - What are some common applications of the FGY75T120SQDN IGBT?
Common applications include UPS, solar power systems, and industrial power conversion. - What is the typical collector-emitter saturation voltage of the FGY75T120SQDN?
The typical collector-emitter saturation voltage is 1.7 V. - What is the maximum gate-emitter voltage of the FGY75T120SQDN?
The maximum gate-emitter voltage is -20 to 20 V. - What is the rise time of the FGY75T120SQDN?
The rise time is typically 96 nS. - What is the total gate charge of the FGY75T120SQDN?
The total gate charge is typically 399 nC.
