Overview
The STGWA40M120DF3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the M series of IGBTs and utilizes an advanced proprietary trench gate field-stop structure. It is designed to offer low losses and high reliability, making it suitable for a variety of power electronics applications.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (VCE) | 1200 V |
| Current Rating (IC) | 80 A |
| Packaging | TO-247-3 |
| Power Dissipation (PD) | 468 W |
| Gate Threshold Voltage (VGE(th)) | 4.5 V to 6.5 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.7 V to 2.2 V at IC = 40 A |
| Switching Frequency | Up to several kHz depending on application |
Key Features
- Advanced proprietary trench gate field-stop structure for low losses and high efficiency.
- High voltage rating of 1200 V and current rating of 80 A.
- TO-247-3 packaging with long leads for easy mounting.
- Low collector-emitter saturation voltage (VCE(sat)) for reduced power consumption.
- High reliability and robustness against short-circuit and overcurrent conditions.
Applications
The STGWA40M120DF3 IGBT is suitable for various high-power applications, including:
- Industrial power supplies and inverters.
- Motor drives and control systems.
- Renewable energy systems such as solar and wind power inverters.
- Electric vehicle charging stations and power conversion systems.
- High-power switching and power factor correction circuits.
Q & A
- What is the voltage rating of the STGWA40M120DF3 IGBT?
The voltage rating of the STGWA40M120DF3 IGBT is 1200 V. - What is the current rating of the STGWA40M120DF3 IGBT?
The current rating of the STGWA40M120DF3 IGBT is 80 A. - What packaging type does the STGWA40M120DF3 use?
The STGWA40M120DF3 uses the TO-247-3 packaging with long leads. - What is the typical collector-emitter saturation voltage (VCE(sat)) of the STGWA40M120DF3?
The typical collector-emitter saturation voltage (VCE(sat)) of the STGWA40M120DF3 is between 1.7 V and 2.2 V at IC = 40 A. - What are some common applications for the STGWA40M120DF3 IGBT?
The STGWA40M120DF3 IGBT is commonly used in industrial power supplies, motor drives, renewable energy systems, electric vehicle charging stations, and high-power switching circuits. - What is the power dissipation (PD) of the STGWA40M120DF3?
The power dissipation (PD) of the STGWA40M120DF3 is 468 W. - Does the STGWA40M120DF3 have any special features for reliability?
Yes, the STGWA40M120DF3 is designed with high reliability and robustness against short-circuit and overcurrent conditions. - What is the gate threshold voltage (VGE(th)) of the STGWA40M120DF3?
The gate threshold voltage (VGE(th)) of the STGWA40M120DF3 is between 4.5 V and 6.5 V. - Can the STGWA40M120DF3 be used in high-frequency applications?
Yes, the STGWA40M120DF3 can be used in applications with switching frequencies up to several kHz. - Is the STGWA40M120DF3 RoHS compliant?
Yes, the STGWA40M120DF3 is RoHS compliant.
