STGD7NC60HT4
  • Share:

STMicroelectronics STGD7NC60HT4

Manufacturer No:
STGD7NC60HT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 25A 70W DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGD7NC60HT4 is an N-channel Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is designed using advanced PowerMESH™ technology, which ensures an excellent trade-off between switching performance and conduction losses. The STGD7NC60HT4 is characterized by its high voltage and current ratings, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Voltage - Collector to Emitter (Vce)600 V
Current - Collector (Ic) (Max)14 A
Current - Collector Pulsed (Icm)50 A
Vce(on) (Max) @ Vge, Ic2.5 V @ 15 V, 7 A
Power - Max70 W
Package TypeTO-247 long leads

Key Features

  • Advanced PowerMESH™ technology for improved switching performance and reduced conduction losses.
  • Low thermal resistance.
  • High voltage and current ratings (600 V, 14 A).
  • Low-loss operation.
  • Trench gate field stop structure for enhanced performance.

Applications

The STGD7NC60HT4 is suitable for various high-power applications, including but not limited to:

  • Power supplies and converters.
  • Motor drives and control systems.
  • Industrial automation and control systems.
  • Renewable energy systems such as solar and wind power inverters.

Q & A

  1. What is the maximum collector-emitter voltage of the STGD7NC60HT4?
    The maximum collector-emitter voltage is 600 V.
  2. What is the maximum continuous collector current of the STGD7NC60HT4?
    The maximum continuous collector current is 14 A.
  3. What is the package type of the STGD7NC60HT4?
    The package type is TO-247 long leads.
  4. What technology is used in the STGD7NC60HT4?
    The device is developed using advanced PowerMESH™ technology.
  5. What are the typical applications of the STGD7NC60HT4?
    Typical applications include power supplies, motor drives, industrial automation, and renewable energy systems.
  6. What is the maximum pulsed collector current of the STGD7NC60HT4?
    The maximum pulsed collector current is 50 A.
  7. What is the maximum on-state voltage drop (Vce(on)) of the STGD7NC60HT4?
    The maximum on-state voltage drop is 2.5 V @ 15 V, 7 A.
  8. What is the maximum power dissipation of the STGD7NC60HT4?
    The maximum power dissipation is 70 W.
  9. Is the STGD7NC60HT4 suitable for high-frequency applications?
    Yes, it is designed for very fast switching and is suitable for high-frequency applications.
  10. Where can I find detailed specifications for the STGD7NC60HT4?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component suppliers like Mouser and Digi-Key.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):25 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 7A
Power - Max:70 W
Switching Energy:95µJ (on), 115µJ (off)
Input Type:Standard
Gate Charge:35 nC
Td (on/off) @ 25°C:18.5ns/72ns
Test Condition:390V, 7A, 10Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252 (D-Pak)
0 Remaining View Similar

In Stock

$2.69
65

Please send RFQ , we will respond immediately.

Same Series
STGP7NC60H
STGP7NC60H
IGBT 600V 25A 80W TO220

Similar Products

Part Number STGD7NC60HT4 STGB7NC60HT4 STGD6NC60HT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
IGBT Type - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 25 A 25 A 15 A
Current - Collector Pulsed (Icm) 50 A 50 A 21 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A 2.5V @ 15V, 7A 2.5V @ 15V, 3A
Power - Max 70 W 80 W 56 W
Switching Energy 95µJ (on), 115µJ (off) - 20µJ (on), 68µJ (off)
Input Type Standard Standard Standard
Gate Charge 35 nC 35 nC 13.6 nC
Td (on/off) @ 25°C 18.5ns/72ns 18.5ns/72ns 12ns/76ns
Test Condition 390V, 7A, 10Ohm, 15V 390V, 7A, 10Ohm, 15V 390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr) - 37 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252 (D-Pak) D2PAK DPAK

Related Product By Categories

FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
FGB20N60SFD-F085
FGB20N60SFD-F085
onsemi
IGBT FIELD STOP 600V 40A D2PAK
AFGY100T65SPD
AFGY100T65SPD
onsemi
IGBT - 650 V 100 A FS3 FOR EV TR
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
FGH75T65SHDT-F155
FGH75T65SHDT-F155
onsemi
IGBT 650V 150A 455W TO-247
FGY75T120SQDN
FGY75T120SQDN
onsemi
IGBT 1200V 75A UFS
FGHL75T65MQDT
FGHL75T65MQDT
onsemi
FS4 MID SPEED IGBT 650V 75A TO24
STGWT20IH125DF
STGWT20IH125DF
STMicroelectronics
IGBT 1250V 40A 259W TO-3P
STGW60H65DFB
STGW60H65DFB
STMicroelectronics
IGBT 650V 80A 375W TO-247
IKW75N60TXK
IKW75N60TXK
Infineon Technologies
IKW75N60 - DISCRETE IGBT WITH AN
FGH40T120SMDL4
FGH40T120SMDL4
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STPS2H100U
STPS2H100U
STMicroelectronics
DIODE SCHOTTKY 100V 2A SMB
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB