Overview
The FGH40T65SQD_F155 is a 650 V, 40 A Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology, which is part of onsemi’s 4th generation IGBT series. It is designed to offer optimal performance in applications where low conduction and switching losses are crucial, such as solar inverters, UPS systems, welders, telecom equipment, Energy Storage Systems (ESS), and Power Factor Correction (PFC) systems.
Key Specifications
| Symbol | Description | Unit | Min. | Max. | |
|---|---|---|---|---|---|
| VCES | Collector to Emitter Voltage | V | - | - | 650 |
| VGES | Gate to Emitter Voltage | V | - | - | ±20 |
| Transient VGES | Transient Gate to Emitter Voltage | V | - | - | ±30 |
| IC @ TC = 25°C | Collector Current | A | - | - | 80 |
| IC @ TC = 100°C | Collector Current | A | - | - | 40 |
| ILM | Pulsed Collector Current @ TC = 25°C | A | - | - | 160 |
| IF @ TC = 25°C | Diode Forward Current | A | - | - | 40 |
| IF @ TC = 100°C | Diode Forward Current | A | - | - | 20 |
| PD @ TC = 25°C | Maximum Power Dissipation | W | - | - | 238 |
| PD @ TC = 100°C | Maximum Power Dissipation | W | - | - | 119 |
| TJ | Operating Junction Temperature | °C | -55 | - | +175 |
| TSTG | Storage Temperature Range | °C | -55 | - | +175 |
| RθJC (IGBT) | Thermal Resistance, Junction to Case | °C/W | - | - | 0.63 |
| RθJA | Thermal Resistance, Junction to Ambient | °C/W | - | - | 40 |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient: For easy parallel operating
- High Current Capability: Up to 80 A at TC = 25°C and 40 A at TC = 100°C
- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 40 A
- 100% of the Parts Tested for ILM: Ensuring reliability
- High Input Impedance: For better control and stability
- Fast Switching: With turn-on and turn-off delay times optimized for high-frequency applications
- Tighten Parameter Distribution: For consistent performance across devices
- RoHS Compliant: Lead-free and environmentally friendly
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welders
- Telecom Equipment
- Energy Storage Systems (ESS)
- Power Factor Correction (PFC) Systems
Q & A
- What is the maximum collector current of the FGH40T65SQD_F155 at 25°C?
The maximum collector current at 25°C is 80 A.
- What is the maximum junction temperature of the FGH40T65SQD_F155?
The maximum junction temperature is 175°C.
- What are the typical applications for the FGH40T65SQD_F155?
The typical applications include solar inverters, UPS systems, welders, telecom equipment, ESS, and PFC systems.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case (RθJC) is 0.63 °C/W.
- Is the FGH40T65SQD_F155 RoHS compliant?
Yes, the device is RoHS compliant and lead-free.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 238 W.
- What is the typical turn-on delay time?
The typical turn-on delay time is 14.4 ns under specified conditions.
- What is the storage temperature range for the FGH40T65SQD_F155?
The storage temperature range is -55°C to +175°C.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 300°C for 5 seconds, 1/8” from the case.
- What is the typical saturation voltage at 40 A collector current?
The typical saturation voltage (VCE(sat)) is 1.6 V at IC = 40 A.
