Overview
The AFGHL75T65SQDT is a Field Stop Trench Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device leverages the novel field stop 4th generation IGBT technology and Stealth Diode technology to offer optimal performance with low conduction and switching losses. It is designed for high-efficiency operations in various applications, particularly in totem pole bridgeless PFC and inverter systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 650 | V |
| Gate-to-Emitter Voltage (Transient) | VGES | ±20 / ±30 | V |
| Collector Current @ TC = 25°C / 100°C | IC | 80 / 75 | A |
| Pulsed Collector Current | ILM / ICM | 300 | A |
| Diode Forward Current @ TC = 25°C / 100°C | IF | 35 / 20 | A |
| Pulsed Diode Maximum Forward Current | IFM | 200 | A |
| Maximum Power Dissipation @ TC = 25°C / 100°C | PD | 375 / 188 | W |
| Operating Junction / Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
| Maximum Lead Temperature for Soldering | TL | 265 | °C |
| Thermal Resistance Junction-to-Case (IGBT) | RθJC | 0.4 | °C/W |
| Thermal Resistance Junction-to-Case (Diode) | RθJC | 1.55 | °C/W |
| Thermal Resistance Junction-to-Ambient | RθJA | 40 | °C/W |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
- 100% of the Parts are Tested for ILM
- Fast Switching
- Tight Parameter Distribution
- No Reverse Recovery/No Forward Recovery
- AEC-Q101 Qualified and PPAP Capable
Applications
- Automotive
- On & Off Board Chargers
- DC-DC Converters
- PFC (Power Factor Correction)
- Industrial Inverter
Q & A
- What is the maximum collector-to-emitter voltage of the AFGHL75T65SQDT IGBT? The maximum collector-to-emitter voltage is 650 V.
- What is the typical saturation voltage of the AFGHL75T65SQDT at 75 A? The typical saturation voltage is 1.6 V.
- What is the maximum junction temperature for this IGBT? The maximum junction temperature is 175°C.
- Is the AFGHL75T65SQDT AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What are the typical applications of the AFGHL75T65SQDT? Typical applications include automotive, on & off board chargers, DC-DC converters, PFC, and industrial inverters.
- What is the thermal resistance junction-to-case for the IGBT? The thermal resistance junction-to-case for the IGBT is 0.4 °C/W.
- What is the maximum power dissipation at TC = 25°C? The maximum power dissipation at TC = 25°C is 375 W.
- Does the AFGHL75T65SQDT have fast switching capabilities? Yes, it has fast switching capabilities.
- What is the pulsed collector current rating for this IGBT? The pulsed collector current rating is 300 A.
- What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering purposes is 265 °C.
