Overview
The AFGHL75T65SQDC is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop 4th generation IGBT technology and 1.5th generation SiC Schottky Diode technology, offering optimal performance with low conduction and switching losses. It is particularly suited for high-efficiency operations in various applications, including totem pole bridgeless PFC and Inverter systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 650 | V |
| Gate-to-Emitter Voltage (Transient) | VGES | ±20 / ±30 | V |
| Collector Current @ TC = 25°C / 100°C | IC | 80 / 75 | A |
| Pulsed Collector Current | ILM / ICM | 300 | A |
| Diode Forward Current @ TC = 25°C / 100°C | IF | 35 / 20 | A |
| Pulsed Diode Maximum Forward Current | IFM | 200 | A |
| Maximum Power Dissipation @ TC = 25°C / 100°C | PD | 375 / 188 | W |
| Operating Junction / Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
| Maximum Lead Temperature for Soldering | TL | 265 | °C |
| Thermal Resistance Junction-to-Case (IGBT/Diode) | RJC | 0.4 / 1.55 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 40 | °C/W |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A
- 100% of the Parts are Tested for ILM
- Fast Switching
- Tight Parameter Distribution
- No Reverse Recovery/No Forward Recovery
- AEC-Q101 Qualified and PPAP Capable
Applications
- Automotive
- On & Off Board Chargers
- DC-DC Converters
- PFC (Power Factor Correction)
- Industrial Inverter
Q & A
- What is the maximum collector-to-emitter voltage of the AFGHL75T65SQDC?
The maximum collector-to-emitter voltage is 650 V.
- What is the typical collector-emitter saturation voltage at 75 A?
The typical collector-emitter saturation voltage is 1.6 V at IC = 75 A.
- What are the operating junction and storage temperature ranges?
The operating junction and storage temperature ranges are -55 to +175°C.
- Is the AFGHL75T65SQDC AEC-Q101 qualified?
- What are some typical applications for this IGBT?
Typical applications include automotive, on & off board chargers, DC-DC converters, PFC, and industrial inverters.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 265°C.
- Does the AFGHL75T65SQDC have fast switching characteristics?
- What is the thermal resistance junction-to-case for the IGBT and diode?
The thermal resistance junction-to-case is 0.4°C/W for the IGBT and 1.55°C/W for the diode.
- Is there any reverse recovery or forward recovery in the AFGHL75T65SQDC?
No, there is no reverse recovery or forward recovery in the AFGHL75T65SQDC.
- What is the maximum power dissipation at TC = 25°C and TC = 100°C?
The maximum power dissipation is 375 W at TC = 25°C and 188 W at TC = 100°C.
