Overview
The AFGHL75T65SQD is a Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This component utilizes 4th generation high-speed IGBT technology, making it ideal for both hard and soft switching topologies, particularly in automotive applications. It is AEC-Q101 qualified, ensuring it meets stringent automotive standards for reliability and performance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-to-Emitter Voltage | VCES | 650 | V |
| Gate-to-Emitter Voltage (Transient) | VGES | ±20 / ±30 | V |
| Collector Current @ TC = 25°C / 100°C | IC | 80 / 75 | A |
| Pulsed Collector Current | ILM / ICM | 300 | A |
| Diode Forward Current @ TC = 25°C / 100°C | IF | 80 / 50 | A |
| Maximum Power Dissipation @ TC = 25°C / 100°C | PD | 375 / 188 | W |
| Operating Junction / Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
| Maximum Lead Temperature for Soldering | TL | 300 | °C |
| Thermal Resistance Junction-to-Case (IGBT/Diode) | RJC | 0.4 / 0.65 | °C/W |
| Thermal Resistance Junction-to-Ambient | RJA | 40 | °C/W |
Key Features
- AEC-Q101 Qualified: Ensures the component meets automotive industry standards for reliability and performance.
- Maximum Junction Temperature: Up to 175°C, allowing for high-temperature operation.
- Positive Temperature Coefficient: Facilitates easy parallel operation.
- High Current Capability: Supports up to 75 A of collector current.
- Low Saturation Voltage: VCE(Sat) of 1.6 V (typical) at IC = 75 A.
- Fast Switching: Optimized for fast switching times.
- Tight Parameter Distribution: Ensures consistent performance across devices.
- RoHS Compliant: Meets environmental regulations.
Applications
- Automotive HEV-EV Onboard Chargers
- Automotive HEV-EV DC-DC Converters
- Totem Pole Bridgeless PFC (Power Factor Correction)
Q & A
- What is the maximum collector-to-emitter voltage of the AFGHL75T65SQD?
The maximum collector-to-emitter voltage (VCES) is 650 V.
- What is the maximum junction temperature for this IGBT?
The maximum junction temperature (TJ) is 175°C.
- What is the typical collector-emitter saturation voltage at 75 A?
The typical collector-emitter saturation voltage (VCE(Sat)) at 75 A is 1.6 V.
- Is the AFGHL75T65SQD RoHS compliant?
Yes, the AFGHL75T65SQD is RoHS compliant.
- What are the typical applications for this IGBT?
Typical applications include automotive HEV-EV onboard chargers, automotive HEV-EV DC-DC converters, and totem pole bridgeless PFC.
- What is the thermal resistance junction-to-case for the IGBT?
The thermal resistance junction-to-case (RJC) for the IGBT is 0.4 °C/W.
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering is 300 °C.
- Does the AFGHL75T65SQD support high current operation?
Yes, it supports up to 75 A of collector current.
- Is the AFGHL75T65SQD AEC-Q101 qualified?
Yes, the AFGHL75T65SQD is AEC-Q101 qualified.
- What is the typical turn-on delay time at 25°C?
The typical turn-on delay time (td(on)) at 25°C is 25 ns.
