Overview
The FDMT800100DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process and DUAL COOL package technologies. This combination offers the lowest on-resistance (rDS(on)) while maintaining excellent switching performance and low Junction-to-Ambient thermal resistance. This MOSFET is designed for high efficiency and reliability in various power management applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Breakdown Voltage (BVDSS) | 100 | V |
| Maximum Drain Current (ID) | 162 A (Tc), 24 A (Ta) | A |
| Maximum On-Resistance (rDS(on)) at VGS = 10 V, ID = 24 A | 2.95 mΩ | mΩ |
| Maximum On-Resistance (rDS(on)) at VGS = 6 V, ID = 19 A | 4.46 mΩ | mΩ |
| Gate to Source Threshold Voltage (VGS(th)) | 2.0 - 4.0 V | V |
| Gate to Source Leakage Current (IGSS) | 100 nA | nA |
| Package Type | TDFNW8 8.3 x 8.4, 2P, DUAL COOL, OPTION 2 | |
| Package Dimensions | 8 x 8 mm MLP |
Key Features
- Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- Low Profile 8 x 8 mm MLP Package
- MSL1 Robust Package Design
- 100% UIL Tested
- Pb-Free, Halide Free, and RoHS Compliant
Applications
- OringFET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Q & A
- What is the maximum drain to source breakdown voltage of the FDMT800100DC?
The maximum drain to source breakdown voltage is 100 V. - What is the maximum on-resistance (rDS(on)) at VGS = 10 V and ID = 24 A?
The maximum on-resistance is 2.95 mΩ. - What are the typical applications of the FDMT800100DC MOSFET?
The typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion. - Is the FDMT800100DC MOSFET RoHS compliant?
Yes, the device is Pb-Free, Halide Free, and RoHS compliant. - What is the package type of the FDMT800100DC?
The package type is TDFNW8 8.3 x 8.4, 2P, DUAL COOL, OPTION 2. - What is the gate to source threshold voltage range of the FDMT800100DC?
The gate to source threshold voltage range is 2.0 - 4.0 V. - What is the maximum drain current (ID) for the FDMT800100DC?
The maximum drain current is 162 A (Tc) and 24 A (Ta). - Does the FDMT800100DC have any special thermal management features?
Yes, it features low Junction-to-Ambient thermal resistance due to the DUAL COOL package technology. - Is the FDMT800100DC 100% UIL tested?
Yes, the device is 100% UIL tested. - What is the package dimension of the FDMT800100DC?
The package dimension is 8 x 8 mm MLP.
