Overview
The FDMT800120DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process and DUAL COOL package technology. This device is designed to offer the lowest on-resistance (rDS(on)) while maintaining excellent switching performance and high efficiency. The MOSFET features a low profile 8x8 mm MLP package and is RoHS compliant, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 120 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 128 | A |
| Continuous Drain Current (ID) at TC = 100°C | 81 | A |
| Pulsed Drain Current (ID) | 767 | A |
| Single Pulse Avalanche Energy (EAS) | 1350 | mJ |
| Power Dissipation (PD) at TC = 25°C | 156 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum rDS(on) at VGS = 10 V, ID = 20 A | 4.2 | mΩ |
| Maximum rDS(on) at VGS = 6 V, ID = 16 A | 6.4 | mΩ |
Key Features
- Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
- Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
- Low Profile 8x8 mm MLP Package
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS Compliant
Applications
- OringFET/Load Switching
- Synchronous Rectification
- DC-DC Conversion
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMT800120DC? The maximum drain to source voltage is 120 V.
- What is the maximum continuous drain current (ID) at TC = 25°C? The maximum continuous drain current at TC = 25°C is 128 A.
- What is the maximum rDS(on) at VGS = 10 V and ID = 20 A? The maximum rDS(on) at VGS = 10 V and ID = 20 A is 4.2 mΩ.
- Is the FDMT800120DC RoHS compliant? Yes, the FDMT800120DC is RoHS compliant.
- What are the typical applications of the FDMT800120DC? Typical applications include OringFET/Load Switching, Synchronous Rectification, and DC-DC Conversion.
- What is the operating and storage junction temperature range of the FDMT800120DC? The operating and storage junction temperature range is -55 to +150°C.
- What is the single pulse avalanche energy (EAS) of the FDMT800120DC? The single pulse avalanche energy is 1350 mJ.
- What is the power dissipation (PD) at TC = 25°C? The power dissipation at TC = 25°C is 156 W.
- Does the FDMT800120DC feature enhanced body diode technology? Yes, it features next generation enhanced body diode technology engineered for soft recovery.
- What is the package type of the FDMT800120DC? The package type is a low profile 8x8 mm MLP package.
