Overview
The FDMT800150DC is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH process and DUAL COOL package technologies. This combination offers the lowest rDS(on) while maintaining excellent switching performance and extremely low Junction-to-Ambient thermal resistance. The device is designed for high efficiency and reliability, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Rating | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 150 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current) - Continuous at TC = 25°C | 99 | A |
| ID (Drain Current) - Continuous at TC = 100°C | 62 | A |
| ID (Drain Current) - Pulsed | 561 | A |
| rDS(on) (Static Drain to Source On Resistance) at VGS = 10 V, ID = 15 A | 6.5 mΩ | mΩ |
| rDS(on) (Static Drain to Source On Resistance) at VGS = 6 V, ID = 13 A | 8.4 mΩ | mΩ |
| EAS (Single Pulse Avalanche Energy) | 1093 | mJ |
| PD (Power Dissipation) at TC = 25°C | 156 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | −55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) - Top Source | 1.6 | °C/W |
| RθJC (Thermal Resistance, Junction to Case) - Bottom Drain | 0.8 | °C/W |
Key Features
- Advanced POWERTRENCH process and DUAL COOL package technologies for low rDS(on) and high efficiency.
- Next Generation Enhanced Body Diode Technology, engineered for soft recovery.
- Low Profile 8x8 mm MLP Package.
- MSL1 Robust Package Design.
- 100% UIL Tested.
- Pb-Free, Halide Free, and RoHS Compliant.
Applications
- OringFET / Load Switching.
- Synchronous Rectification.
- DC-DC Conversion.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMT800150DC?
The maximum drain to source voltage (VDS) is 150 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 99 A.
- What is the typical static drain to source on resistance (rDS(on)) at VGS = 10 V and ID = 15 A?
The typical static drain to source on resistance (rDS(on)) at VGS = 10 V and ID = 15 A is 6.5 mΩ.
- What are the operating and storage junction temperature ranges for the FDMT800150DC?
The operating and storage junction temperature ranges are −55 to +150 °C.
- Is the FDMT800150DC RoHS compliant?
- What is the package type of the FDMT800150DC?
The package type is PQFN8 8x8, 2P (Dual Cool 88).
- What are some typical applications for the FDMT800150DC?
Typical applications include OringFET / Load Switching, Synchronous Rectification, and DC-DC Conversion.
- What is the maximum single pulse avalanche energy (EAS) for the FDMT800150DC?
The maximum single pulse avalanche energy (EAS) is 1093 mJ.
- What is the thermal resistance from junction to ambient (RθJA) for the FDMT800150DC?
The thermal resistance from junction to ambient (RθJA) varies depending on the conditions, but one of the specified values is 38 °C/W.
- Is the FDMT800150DC 100% UIL tested?
