2N7002E-7-G
  • Share:

Diodes Incorporated 2N7002E-7-G

Manufacturer No:
2N7002E-7-G
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002E-7-G is a small signal N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The MOSFET features a low gate threshold voltage, low input capacitance, and fast switching speed, all packaged in a small surface-mount SOT23 package.

Key Specifications

Characteristic Symbol Value Unit
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current at 25°C ID 300 mA
On-State Resistance (RDS(ON)) at VGS = 10V RDS(ON) 3 Ω
Gate Threshold Voltage at ID = 250µA VGS(th) 2.5 V
Input Capacitance at VDS = 25V Ciss 50 pF pF
Operating Temperature Range TJ -55 to 150 °C
Package Type SOT23-3

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT23)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free, 'Green' Device
  • Qualified to AEC-Q101 Standards for High Reliability

Applications

  • Motor Control
  • Power Management Functions
  • Low Side Load Switch
  • Level Shift Circuits
  • DC-DC Converter
  • Portable Applications (e.g., DSC, PDA, Cell Phone)
  • Direct Logic-Level Interface: TTL/CMOS
  • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors
  • Battery Operated Systems
  • Solid-State Relays

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the 2N7002E-7-G?

    The maximum drain to source voltage (VDSS) is 60V.

  2. What is the typical on-state resistance (RDS(ON)) at VGS = 10V?

    The typical on-state resistance (RDS(ON)) at VGS = 10V is 3 Ω.

  3. What is the gate threshold voltage (VGS(th)) at ID = 250µA?

    The gate threshold voltage (VGS(th)) at ID = 250µA is typically 2.5V.

  4. What is the input capacitance (Ciss) at VDS = 25V?

    The input capacitance (Ciss) at VDS = 25V is 50 pF.

  5. What is the operating temperature range of the 2N7002E-7-G?

    The operating temperature range is -55°C to 150°C.

  6. Is the 2N7002E-7-G RoHS compliant?

    Yes, the 2N7002E-7-G is fully RoHS compliant and lead-free.

  7. What package type is the 2N7002E-7-G available in?

    The 2N7002E-7-G is available in a SOT23-3 package.

  8. What are some common applications of the 2N7002E-7-G?

    Common applications include motor control, power management functions, low side load switch, level shift circuits, DC-DC converters, and portable applications.

  9. Is the 2N7002E-7-G qualified for automotive applications?

    Yes, the 2N7002E-7-G is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive and other demanding applications.[

  10. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current at 25°C is 300 mA.[

  11. Does the 2N7002E-7-G have any special environmental certifications?

    Yes, it is halogen and antimony free, and it complies with the RoHS directive.[

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
412

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S60TX
DD44S32S60TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAV199TQ-7-F
BAV199TQ-7-F
Diodes Incorporated
SWITCHING STANDARD DIODE SOT523
BAS40BRW-7
BAS40BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT363
BAT54CT-7
BAT54CT-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
1N4004G-T
1N4004G-T
Diodes Incorporated
DIODE GEN PURP 400V 1A DO41
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84C5V6S-7-F
BZX84C5V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 5.6V SOT363
BZX84C36-7-G
BZX84C36-7-G
Diodes Incorporated
DIODE ZENER
BZX84C39TA
BZX84C39TA
Diodes Incorporated
DIODE ZENER 39V 350MW SOT23-3
BFS17NQTA
BFS17NQTA
Diodes Incorporated
RF TRANS NPN 11V 3.2GHZ SOT23
BCP5316QTA
BCP5316QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BC857BFZ-7B
BC857BFZ-7B
Diodes Incorporated
TRANS PNP 45V 0.1A 3DFN
LM2903AQM8-13
LM2903AQM8-13
Diodes Incorporated
IC COMP DUAL DIFFERENTIAL 8MSOP