BCP5516TA
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Diodes Incorporated BCP5516TA

Manufacturer No:
BCP5516TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5516TA is a medium power NPN silicon planar transistor manufactured by Diodes Incorporated. This transistor is part of the BCP54/55/56 series and is housed in a SOT223 package. It is designed for medium power switching and amplification applications, offering high reliability and compliance with various industry standards.

The BCP5516TA is fully RoHS compliant, halogen- and antimony-free, and qualified to AEC-Q101 standards, making it suitable for automotive and other high-reliability applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 60 - - V IC = 100µA
Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 - - V IE = 10µA
Continuous Collector Current IC - - 1 A - -
Peak Pulse Collector Current ICM - - 2 A - -
Power Dissipation PD - - 2 W - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V - IC = 500mA, IB = 50mA
Transition Frequency fT 150 - - MHz IC = 50mA, VCE = 10V, f = 100MHz

Key Features

  • High continuous collector current of 1 A and peak pulse current of 2 A.
  • Low saturation voltage VCE(sat) < 500mV at 0.5 A.
  • Gain groups 10 and 16 for various application needs.
  • Complementary PNP types: BCP51, 52, and 53.
  • Totally lead-free and fully RoHS compliant.
  • Halogen- and antimony-free, making it a “Green” device.
  • Qualified to AEC-Q101 standards for high reliability.
  • SOT223 package with molded plastic case and matte tin finish leads.
  • UL flammability rating 94V-0 and moisture sensitivity level 1 per J-STD-020.

Applications

  • Medium power switching applications.
  • Amplification stages, including AF driver and output stages.
  • Automotive applications requiring specific change control and high reliability.

Q & A

  1. What is the continuous collector current of the BCP5516TA transistor?

    The continuous collector current is 1 A.

  2. What is the peak pulse collector current of the BCP5516TA transistor?

    The peak pulse collector current is 2 A.

  3. What is the collector-emitter breakdown voltage of the BCP5516TA transistor?

    The collector-emitter breakdown voltage is 60 V.

  4. Is the BCP5516TA transistor RoHS compliant?

    Yes, it is fully RoHS compliant.

  5. What is the transition frequency of the BCP5516TA transistor?

    The transition frequency is 150 MHz.

  6. What are the typical applications of the BCP5516TA transistor?

    Medium power switching and amplification applications, including AF driver and output stages.

  7. Is the BCP5516TA transistor suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards for high reliability and suitable for automotive applications.

  8. What is the package type of the BCP5516TA transistor?

    The package type is SOT223.

  9. What is the weight of the BCP5516TA transistor?

    The weight is approximately 0.112 grams.

  10. What are the complementary PNP types for the BCP5516TA transistor?

    The complementary PNP types are BCP51, 52, and 53.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5516TA BCP5616TA BCP5216TA BCP5316TA BCP5416TA BCP5510TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active
Transistor Type NPN NPN PNP PNP NPN -
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A -
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 80 V 45 V -
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V -
Power - Max 2 W 2 W 2 W 2 W 2 W -
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz -
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA -
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3 -

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