BCP5410TA
  • Share:

Diodes Incorporated BCP5410TA

Manufacturer No:
BCP5410TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5410TA is a medium power NPN transistor manufactured by Diodes Incorporated. This transistor is part of the BCP54/55/56 series, known for its high performance and reliability in various electronic applications. The BCP5410TA is housed in a SOT223 package, making it suitable for a wide range of medium power switching and amplification tasks.

Key Specifications

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCEO 45 - - V IC = 10mA
Collector-Emitter Breakdown Voltage BVCEO 45 - - V IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 - - V IE = 10µA
Collector Cut-Off Current ICBO - - 0.1 µA - VCB = 30V, TA = +150°C
Emitter Cut-Off Current IEBO - - 20 nA - VEB = 4V
DC Current Gain hFE 25 40 250 - IC = 5mA, VCE = 2V
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 V - IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage VBE(on) - - 1.0 V - IC = 500mA, VCE = 2V
Transition Frequency fT 150 - - MHz IC = 50mA, VCE = 10V, f = 100MHz
Output Capacitance Cobo - - 25 pF - VCB = 10V, f = 1MHz
Continuous Collector Current IC - - 1 A - -
Peak Pulse Current ICM - - 2 A - -
Power Dissipation Pd - - 2 W - -

Key Features

  • High Collector Current: The BCP5410TA has a high continuous collector current of 1 A and a peak pulse current of 2 A, making it suitable for medium power applications.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V at 0.5 A, which enhances efficiency in switching and amplification tasks.
  • High Breakdown Voltages: With collector-base and collector-emitter breakdown voltages of 45 V, this transistor is robust against voltage spikes.
  • Environmental Compliance: The BCP5410TA is totally lead-free, fully RoHS compliant, and halogen- and antimony-free, making it an environmentally friendly choice.
  • Automotive Grade: It is suitable for automotive applications, meeting AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

Applications

  • Medium Power Switching: The BCP5410TA is ideal for medium power switching applications due to its high collector current and low saturation voltage.
  • Amplification Stages: It is suitable for AF driver and output stages in audio amplifiers and other amplification circuits.
  • Automotive Electronics: Given its compliance with automotive standards, it is used in various automotive electronic systems.

Q & A

  1. What is the continuous collector current of the BCP5410TA?

    The continuous collector current of the BCP5410TA is 1 A.

  2. What is the peak pulse current of the BCP5410TA?

    The peak pulse current of the BCP5410TA is 2 A.

  3. What is the collector-emitter breakdown voltage of the BCP5410TA?

    The collector-emitter breakdown voltage (BVCEO) of the BCP5410TA is 45 V.

  4. What is the collector-emitter saturation voltage of the BCP5410TA?

    The collector-emitter saturation voltage (VCE(sat)) of the BCP5410TA is less than 0.5 V at 0.5 A.

  5. Is the BCP5410TA RoHS compliant?

    Yes, the BCP5410TA is fully RoHS compliant and lead-free.

  6. What is the typical transition frequency of the BCP5410TA?

    The typical transition frequency (fT) of the BCP5410TA is 150 MHz.

  7. What is the power dissipation of the BCP5410TA?

    The power dissipation (Pd) of the BCP5410TA is 2 W.

  8. Is the BCP5410TA suitable for automotive applications?

    Yes, the BCP5410TA is suitable for automotive applications and meets AEC-Q100/101/200 standards.

  9. What is the package type of the BCP5410TA?

    The BCP5410TA is housed in a SOT223 package.

  10. What are the environmental benefits of the BCP5410TA?

    The BCP5410TA is halogen- and antimony-free, and it is manufactured using a “green” molding compound, making it an environmentally friendly choice.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.42
385

Please send RFQ , we will respond immediately.

Same Series
BCP5610TA
BCP5610TA
TRANS NPN 80V 1A SOT223-3
BCP5416TA
BCP5416TA
TRANS NPN 45V 1A SOT223-3
BCP5410TA
BCP5410TA
TRANS NPN 45V 1A SOT223-3
BCP5510TA
BCP5510TA
TRANS NPN 60V 1A SOT223

Similar Products

Part Number BCP5410TA BCP5610TA BCP5416TA BCP5510TA BCP5110TA BCP5210TA BCP5310TA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active Active Active Active
Transistor Type NPN NPN NPN - PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A - 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 80 V 45 V - 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA - 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 63 @ 150mA, 2V 100 @ 150mA, 2V - 63 @ 150mA, 2V 63 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W - 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz - 150MHz 150MHz 150MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA - TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 - SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC857A_R1_00001
BC857A_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
MMBT2222A_D87Z
MMBT2222A_D87Z
onsemi
TRANS NPN 40V 1A SOT23-3
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92

Related Product By Brand

BAV99-13-F
BAV99-13-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23
BAV70HDWQ-13
BAV70HDWQ-13
Diodes Incorporated
DIODE FS 100V 125MA SOT363
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
BAT54BRW-7
BAT54BRW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
1N4148-T
1N4148-T
Diodes Incorporated
DIODE GEN PURP 75V 150MA DO35
BAS21T-7
BAS21T-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
BZX84C2V4S-7-F
BZX84C2V4S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 2.4V SOT363
BZX84C3V6S-7-F
BZX84C3V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.6V SOT363
BZX84C6V2W-7
BZX84C6V2W-7
Diodes Incorporated
DIODE ZENER 6.2V 200MW SOT323
BC807-40Q-7-F
BC807-40Q-7-F
Diodes Incorporated
TRANS PNP 45V 0.5A SOT23-3
BSS138K-13
BSS138K-13
Diodes Incorporated
MOSFET N-CH 50V 310MA SOT23
SA555S-13
SA555S-13
Diodes Incorporated
IC OSC SINGLE TIMER 500KHZ 8SO