Overview
The S8050-D-AP is a NPN Bipolar Junction Transistor (BJT) manufactured by Micro Commercial Components (MCC). This transistor is designed for low voltage, high current applications and is particularly suited for Class B push-pull amplifiers and general-purpose use. It features a maximum collector-emitter voltage of 25 V and a continuous collector current of up to 500 mA. The device operates within a wide temperature range of -55°C to +150°C, making it versatile for various electronic circuits.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Transistor Type | NPN | |
Collector Current (Ic) | 500 mA | |
Collector-Emitter Voltage (Vce) | 25 V | |
Emitter-Base Voltage (Vebo) | 5 V | |
Collector-Base Voltage (Vcbo) | 40 V | |
Power Dissipation | 625 mW | |
Transition Frequency | 150 MHz | |
DC Current Gain (hFE) | 160 @ 50 mA, 1 V | |
Operating Junction Temperature | -55°C to +150°C | |
Package Type | TO-92 |
Key Features
- Low voltage, high current capability, making it suitable for Class B push-pull amplifiers and other low signal applications.
- High DC current gain (hFE) of 160 at 50 mA and 1 V.
- Low collector-emitter saturation voltage (Vce(sat)) of 600 mV at 50 mA and 500 mA.
- Wide operating temperature range of -55°C to +150°C.
- High transition frequency of up to 150 MHz.
- Compact TO-92 through-hole package for easy integration into PCB layouts.
Applications
- Class B push-pull audio amplifiers.
- General-purpose switching and amplification circuits.
- Low signal applications requiring high current and low voltage.
- Automotive and industrial control systems.
- Consumer electronics such as audio equipment and power supplies.
Q & A
- What is the maximum collector-emitter voltage of the S8050-D-AP transistor?
The maximum collector-emitter voltage is 25 V.
- What is the continuous collector current rating of the S8050-D-AP transistor?
The continuous collector current rating is up to 500 mA.
- What is the transition frequency of the S8050-D-AP transistor?
The transition frequency is up to 150 MHz.
- What is the DC current gain (hFE) of the S8050-D-AP transistor?
The DC current gain (hFE) is 160 at 50 mA and 1 V.
- What is the operating junction temperature range of the S8050-D-AP transistor?
The operating junction temperature range is -55°C to +150°C.
- What type of package does the S8050-D-AP transistor use?
The transistor is housed in a TO-92 through-hole package.
- What are some common applications of the S8050-D-AP transistor?
Common applications include Class B push-pull audio amplifiers, general-purpose switching and amplification circuits, and low signal applications.
- What is the power dissipation capacity of the S8050-D-AP transistor?
The power dissipation capacity is 625 mW.
- Is the S8050-D-AP transistor RoHS compliant?
Yes, the transistor is RoHS compliant and available with lead-free and halogen-free options.
- What is the collector-emitter saturation voltage (Vce(sat)) of the S8050-D-AP transistor?
The collector-emitter saturation voltage (Vce(sat)) is 600 mV at 50 mA and 500 mA.