S8050-D-AP
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Micro Commercial Co S8050-D-AP

Manufacturer No:
S8050-D-AP
Manufacturer:
Micro Commercial Co
Package:
Tape & Box (TB)
Description:
TRANS NPN 25V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The S8050-D-AP is a NPN Bipolar Junction Transistor (BJT) manufactured by Micro Commercial Components (MCC). This transistor is designed for low voltage, high current applications and is particularly suited for Class B push-pull amplifiers and general-purpose use. It features a maximum collector-emitter voltage of 25 V and a continuous collector current of up to 500 mA. The device operates within a wide temperature range of -55°C to +150°C, making it versatile for various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Collector Current (Ic) 500 mA
Collector-Emitter Voltage (Vce) 25 V
Emitter-Base Voltage (Vebo) 5 V
Collector-Base Voltage (Vcbo) 40 V
Power Dissipation 625 mW
Transition Frequency 150 MHz
DC Current Gain (hFE) 160 @ 50 mA, 1 V
Operating Junction Temperature -55°C to +150°C
Package Type TO-92

Key Features

  • Low voltage, high current capability, making it suitable for Class B push-pull amplifiers and other low signal applications.
  • High DC current gain (hFE) of 160 at 50 mA and 1 V.
  • Low collector-emitter saturation voltage (Vce(sat)) of 600 mV at 50 mA and 500 mA.
  • Wide operating temperature range of -55°C to +150°C.
  • High transition frequency of up to 150 MHz.
  • Compact TO-92 through-hole package for easy integration into PCB layouts.

Applications

  • Class B push-pull audio amplifiers.
  • General-purpose switching and amplification circuits.
  • Low signal applications requiring high current and low voltage.
  • Automotive and industrial control systems.
  • Consumer electronics such as audio equipment and power supplies.

Q & A

  1. What is the maximum collector-emitter voltage of the S8050-D-AP transistor?

    The maximum collector-emitter voltage is 25 V.

  2. What is the continuous collector current rating of the S8050-D-AP transistor?

    The continuous collector current rating is up to 500 mA.

  3. What is the transition frequency of the S8050-D-AP transistor?

    The transition frequency is up to 150 MHz.

  4. What is the DC current gain (hFE) of the S8050-D-AP transistor?

    The DC current gain (hFE) is 160 at 50 mA and 1 V.

  5. What is the operating junction temperature range of the S8050-D-AP transistor?

    The operating junction temperature range is -55°C to +150°C.

  6. What type of package does the S8050-D-AP transistor use?

    The transistor is housed in a TO-92 through-hole package.

  7. What are some common applications of the S8050-D-AP transistor?

    Common applications include Class B push-pull audio amplifiers, general-purpose switching and amplification circuits, and low signal applications.

  8. What is the power dissipation capacity of the S8050-D-AP transistor?

    The power dissipation capacity is 625 mW.

  9. Is the S8050-D-AP transistor RoHS compliant?

    Yes, the transistor is RoHS compliant and available with lead-free and halogen-free options.

  10. What is the collector-emitter saturation voltage (Vce(sat)) of the S8050-D-AP transistor?

    The collector-emitter saturation voltage (Vce(sat)) is 600 mV at 50 mA and 500 mA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 50mA, 1V
Power - Max:625 mW
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92
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Similar Products

Part Number S8050-D-AP S8550-D-AP S8050-D-BP S8050-B-AP S8050-C-AP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 200nA 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA, 1V 160 @ 50mA, 1V 160 @ 50mA, 1V 85 @ 50mA, 1V 120 @ 50mA, 1V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 150MHz 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 TO-92 TO-92 TO-92 TO-92

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