Overview
The S8050-B-AP is an NPN epitaxial silicon transistor manufactured by Micro Commercial Co. This transistor is known for its low voltage and high current capability, making it suitable for various electronic applications, including push-pull amplification and general switching.
It features a three-layer structure with one P-doped semiconductor layer sandwiched between two N-doped layers, representing the base, emitter, and collector terminals respectively. The transistor operates in forward bias mode to achieve optimal performance.
Key Specifications
| Parameter | Value | Description |
|---|---|---|
| Transistor Type | NPN | Bipolar Junction Transistor |
| Current - Collector (Ic) (Max) | 500 mA | Maximum collector current |
| Voltage - Collector Emitter Breakdown (Max) | 25 V | Maximum collector-emitter voltage |
| Vce Saturation (Max) @ Ib, Ic | 600 mV @ 50 mA, 500 mA | Saturation voltage at specified base and collector currents |
| Current - Collector Cutoff (Max) | 100 nA | Maximum collector cutoff current |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 50 mA, 1 V | Minimum DC current gain at specified collector current and voltage |
| Power - Max | 625 mW | Maximum power dissipation |
| Frequency - Transition | 150 MHz | Transition frequency |
| Operating Temperature | -55°C ~ 150°C (TJ) | Junction temperature range |
| Mounting Type | Through Hole | Type of mounting |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Package type and case style |
Key Features
- High Current Capability: The S8050-B-AP can handle a maximum collector current of 500 mA, making it suitable for high current applications.
- Low Voltage Operation: It operates with a maximum collector-emitter voltage of 25 V, which is beneficial for low voltage circuits.
- High Gain: The transistor has a DC current gain (hFE) of at least 85, ensuring good amplification capabilities.
- Wide Operating Temperature Range: The transistor can operate within a junction temperature range of -55°C to 150°C, making it versatile for various environmental conditions.
- Transition Frequency: With a transition frequency of 150 MHz, it is suitable for applications requiring moderate frequency handling.
Applications
- Push-Pull Amplifiers: The S8050-B-AP is ideal for Class B push-pull amplification due to its high current and low voltage characteristics.
- General Switching: It can be used in various switching applications where high current and low voltage are required.
- Audio Amplifiers: Suitable for audio amplification circuits due to its ability to handle moderate power levels and low distortion.
- RF Circuits: Although not ideal for high-frequency RF circuits above 150 MHz, it can be used in lower frequency RF applications.
Q & A
- What is the maximum collector current of the S8050-B-AP transistor?
The maximum collector current is 500 mA.
- What is the maximum collector-emitter voltage for the S8050-B-AP?
The maximum collector-emitter voltage is 25 V.
- What is the DC current gain (hFE) of the S8050-B-AP transistor?
The minimum DC current gain (hFE) is 85 at 50 mA and 1 V.
- What is the operating temperature range of the S8050-B-AP transistor?
The operating temperature range is -55°C to 150°C (TJ).
- What is the transition frequency of the S8050-B-AP transistor?
The transition frequency is 150 MHz.
- What type of package does the S8050-B-AP transistor come in?
The transistor comes in TO-226-3 and TO-92-3 (TO-226AA) packages with formed leads.
- Can the S8050-B-AP be used in high-frequency RF circuits?
No, it is not ideal for high-frequency RF circuits above 150 MHz.
- What is the maximum power dissipation of the S8050-B-AP transistor?
The maximum power dissipation is 625 mW.
- Is the S8050-B-AP suitable for audio amplification?
Yes, it is suitable for audio amplification due to its moderate power handling and low distortion characteristics.
- Can the S8050-B-AP be used as a replacement for other transistors in all applications?
No, it should not be used as a replacement in applications requiring higher voltage or frequency capabilities than it can provide.
