BSS138KT-TP
  • Share:

Micro Commercial Co BSS138KT-TP

Manufacturer No:
BSS138KT-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
N-CHANNEL MOSFET, SOT-523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138 is a Logic Level N-Channel MOSFET produced by Micro Commercial Components. It is designed for low current and low voltage switching applications, making it ideal for various electronic circuits. The MOSFET features a low on-state resistance, low input capacitance, and fast switching speeds, which are crucial for high-efficiency power management and level shifting applications.

The device is packaged in a compact SOT-23 surface mount package, which is suitable for space-constrained and portable applications such as cellular phones and other power management circuits. It is also fully RoHS compliant, lead-free, and halogen-free, adhering to environmental standards.

Key Specifications

Parameter Symbol Min Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current ID 0.22 A
On-Resistance (RDS(ON)) @ VGS=10V RDS(ON) 2.5 Ω
On-Resistance (RDS(ON)) @ VGS=4.5V RDS(ON) 3 Ω
Gate Threshold Voltage (VGS(th)) VGS(th) 0.8 1.5 V
Junction Temperature (Tj) Tj 150 °C
Input Capacitance (Ciss) Ciss 27 pF
Output Capacitance (Coss) Coss 3 pF
Power Rating (PD) PD 0.35 W

Key Features

  • Logic Level N-Channel MOSFET: Suitable for low voltage application circuits and level shifting applications.
  • Low On-State Resistance: Maximum RDS(ON) of 2.5Ω at VGS=10V and 3Ω at VGS=4.5V, ensuring efficient switching.
  • Low Input Capacitance: Input capacitance of 27 pF, contributing to fast switching speeds.
  • Fast Switching Speed: Turn-on and turn-off times of 20ns each, making it suitable for high-speed applications.
  • ESD Protected Gate: Enhanced reliability against electrostatic discharge.
  • RoHS Compliant and Lead-Free: Environmentally friendly and compliant with RoHS standards.
  • Halogen and Antimony Free: Classified as a “Green” device, adhering to environmental regulations.
  • Compact SOT-23 Package: Ideal for space-constrained and portable applications.

Applications

  • Low Current and Low Voltage Switching Applications: Suitable for circuits requiring low current and voltage switching.
  • Logic Level Shifters: Often used in level shifting circuits due to its low threshold voltage.
  • DC-DC Converters: Used in power conversion circuits where high efficiency is required.
  • eMobility Applications: Applicable in electric vehicle and mobility-related electronics.
  • Power Management Applications: Ideal for various power management circuits where low on-state resistance is necessary.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138 MOSFET?

    The maximum drain-source voltage (VDS) is 50V.

  2. What is the typical on-state resistance (RDS(ON)) of the BSS138 at VGS=10V?

    The typical on-state resistance (RDS(ON)) at VGS=10V is 2.5Ω.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS138?

    The gate threshold voltage (VGS(th)) range is from 0.8V to 1.5V.

  4. What is the maximum junction temperature (Tj) of the BSS138?

    The maximum junction temperature (Tj) is 150°C.

  5. Is the BSS138 RoHS compliant and lead-free?

    Yes, the BSS138 is RoHS compliant and lead-free.

  6. What is the typical input capacitance (Ciss) of the BSS138?

    The typical input capacitance (Ciss) is 27 pF.

  7. What are some common applications of the BSS138 MOSFET?

    Common applications include low current and low voltage switching, logic level shifters, DC-DC converters, eMobility, and power management applications.

  8. What is the package type of the BSS138 MOSFET?

    The BSS138 is packaged in a SOT-23 surface mount package.

  9. Does the BSS138 have ESD protection?

    Yes, the BSS138 has ESD protected gates.

  10. What is the maximum continuous drain current (ID) of the BSS138?

    The maximum continuous drain current (ID) is 0.22A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:250mA
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:22800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
0 Remaining View Similar

In Stock

$0.28
164

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

BAV70T-TP
BAV70T-TP
Micro Commercial Co
DIODE ARRAY GP 85V 75MA SOT523
BAT54SDW-TP
BAT54SDW-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT363
MBRD660CT-TP
MBRD660CT-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 60V 6A DPAK
BAT54-TP
BAT54-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 200MA SOT23
1N5821-TP
1N5821-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 3A DO201AD
BAV102-TP
BAV102-TP
Micro Commercial Co
DIODE GP 150V 200MA MINI MELF
BZX84C2V7-TP
BZX84C2V7-TP
Micro Commercial Co
DIODE ZENER 2.7V 350MW SOT23
BZX84B5V1-TP
BZX84B5V1-TP
Micro Commercial Co
DIODE ZENER 5.1V 350MW SOT23
BZV55C33-TP
BZV55C33-TP
Micro Commercial Co
DIODE ZENER 33V 500MW MINI MELF
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BCX51-10-TP
BCX51-10-TP
Micro Commercial Co
TRANS PNP 45V 1A SOT89
BD437-BP
BD437-BP
Micro Commercial Co
TRANS NPN 45V 4A TO126