BSS138KT-TP
  • Share:

Micro Commercial Co BSS138KT-TP

Manufacturer No:
BSS138KT-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
N-CHANNEL MOSFET, SOT-523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138 is a Logic Level N-Channel MOSFET produced by Micro Commercial Components. It is designed for low current and low voltage switching applications, making it ideal for various electronic circuits. The MOSFET features a low on-state resistance, low input capacitance, and fast switching speeds, which are crucial for high-efficiency power management and level shifting applications.

The device is packaged in a compact SOT-23 surface mount package, which is suitable for space-constrained and portable applications such as cellular phones and other power management circuits. It is also fully RoHS compliant, lead-free, and halogen-free, adhering to environmental standards.

Key Specifications

Parameter Symbol Min Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current ID 0.22 A
On-Resistance (RDS(ON)) @ VGS=10V RDS(ON) 2.5 Ω
On-Resistance (RDS(ON)) @ VGS=4.5V RDS(ON) 3 Ω
Gate Threshold Voltage (VGS(th)) VGS(th) 0.8 1.5 V
Junction Temperature (Tj) Tj 150 °C
Input Capacitance (Ciss) Ciss 27 pF
Output Capacitance (Coss) Coss 3 pF
Power Rating (PD) PD 0.35 W

Key Features

  • Logic Level N-Channel MOSFET: Suitable for low voltage application circuits and level shifting applications.
  • Low On-State Resistance: Maximum RDS(ON) of 2.5Ω at VGS=10V and 3Ω at VGS=4.5V, ensuring efficient switching.
  • Low Input Capacitance: Input capacitance of 27 pF, contributing to fast switching speeds.
  • Fast Switching Speed: Turn-on and turn-off times of 20ns each, making it suitable for high-speed applications.
  • ESD Protected Gate: Enhanced reliability against electrostatic discharge.
  • RoHS Compliant and Lead-Free: Environmentally friendly and compliant with RoHS standards.
  • Halogen and Antimony Free: Classified as a “Green” device, adhering to environmental regulations.
  • Compact SOT-23 Package: Ideal for space-constrained and portable applications.

Applications

  • Low Current and Low Voltage Switching Applications: Suitable for circuits requiring low current and voltage switching.
  • Logic Level Shifters: Often used in level shifting circuits due to its low threshold voltage.
  • DC-DC Converters: Used in power conversion circuits where high efficiency is required.
  • eMobility Applications: Applicable in electric vehicle and mobility-related electronics.
  • Power Management Applications: Ideal for various power management circuits where low on-state resistance is necessary.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138 MOSFET?

    The maximum drain-source voltage (VDS) is 50V.

  2. What is the typical on-state resistance (RDS(ON)) of the BSS138 at VGS=10V?

    The typical on-state resistance (RDS(ON)) at VGS=10V is 2.5Ω.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS138?

    The gate threshold voltage (VGS(th)) range is from 0.8V to 1.5V.

  4. What is the maximum junction temperature (Tj) of the BSS138?

    The maximum junction temperature (Tj) is 150°C.

  5. Is the BSS138 RoHS compliant and lead-free?

    Yes, the BSS138 is RoHS compliant and lead-free.

  6. What is the typical input capacitance (Ciss) of the BSS138?

    The typical input capacitance (Ciss) is 27 pF.

  7. What are some common applications of the BSS138 MOSFET?

    Common applications include low current and low voltage switching, logic level shifters, DC-DC converters, eMobility, and power management applications.

  8. What is the package type of the BSS138 MOSFET?

    The BSS138 is packaged in a SOT-23 surface mount package.

  9. Does the BSS138 have ESD protection?

    Yes, the BSS138 has ESD protected gates.

  10. What is the maximum continuous drain current (ID) of the BSS138?

    The maximum continuous drain current (ID) is 0.22A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:250mA
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:22800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
0 Remaining View Similar

In Stock

$0.28
164

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HV30/AA
DD26S10HV30/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

SMA6J33AFL-TP
SMA6J33AFL-TP
Micro Commercial Co
TVS DIODE 33VWM 53.3VC DO221AC
BAS40-06HE3-TP
BAS40-06HE3-TP
Micro Commercial Co
SMALL SIGNAL SCHOTTKY DIODES 40V
BAT54SWT-TP
BAT54SWT-TP
Micro Commercial Co
DIODE ARRAY SCHOTTKY 30V SOT323
1N4148X-TP
1N4148X-TP
Micro Commercial Co
DIODE GEN PURP 75V 150MA SOD523
BZX84C9V1-TP
BZX84C9V1-TP
Micro Commercial Co
DIODE ZENER 9.1V 350MW SOT23
BZV55C15-TP
BZV55C15-TP
Micro Commercial Co
DIODE ZENER 15V 500MW MINI MELF
BC817-25-TP
BC817-25-TP
Micro Commercial Co
TRANS NPN 45V 0.8A SOT23
MMBT3904HE3-TP
MMBT3904HE3-TP
Micro Commercial Co
TRANS NPN 40V 0.2A SOT23
TIP41C-BP
TIP41C-BP
Micro Commercial Co
TRANS NPN 100V 6A TO220AB
BCP53-10-TP
BCP53-10-TP
Micro Commercial Co
TRANS PNP 80V 1A SOT223
BSS123K-TP
BSS123K-TP
Micro Commercial Co
MOSFET N-CH 100V 170MA SOT23
TL431LP-BP
TL431LP-BP
Micro Commercial Co
IC VREF SHUNT 36V TO92