BSS138KT-TP
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Micro Commercial Co BSS138KT-TP

Manufacturer No:
BSS138KT-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
N-CHANNEL MOSFET, SOT-523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138 is a Logic Level N-Channel MOSFET produced by Micro Commercial Components. It is designed for low current and low voltage switching applications, making it ideal for various electronic circuits. The MOSFET features a low on-state resistance, low input capacitance, and fast switching speeds, which are crucial for high-efficiency power management and level shifting applications.

The device is packaged in a compact SOT-23 surface mount package, which is suitable for space-constrained and portable applications such as cellular phones and other power management circuits. It is also fully RoHS compliant, lead-free, and halogen-free, adhering to environmental standards.

Key Specifications

Parameter Symbol Min Unit
Drain-Source Voltage VDS 50 V
Gate-Source Voltage VGS ±20 V
Drain Current ID 0.22 A
On-Resistance (RDS(ON)) @ VGS=10V RDS(ON) 2.5 Ω
On-Resistance (RDS(ON)) @ VGS=4.5V RDS(ON) 3 Ω
Gate Threshold Voltage (VGS(th)) VGS(th) 0.8 1.5 V
Junction Temperature (Tj) Tj 150 °C
Input Capacitance (Ciss) Ciss 27 pF
Output Capacitance (Coss) Coss 3 pF
Power Rating (PD) PD 0.35 W

Key Features

  • Logic Level N-Channel MOSFET: Suitable for low voltage application circuits and level shifting applications.
  • Low On-State Resistance: Maximum RDS(ON) of 2.5Ω at VGS=10V and 3Ω at VGS=4.5V, ensuring efficient switching.
  • Low Input Capacitance: Input capacitance of 27 pF, contributing to fast switching speeds.
  • Fast Switching Speed: Turn-on and turn-off times of 20ns each, making it suitable for high-speed applications.
  • ESD Protected Gate: Enhanced reliability against electrostatic discharge.
  • RoHS Compliant and Lead-Free: Environmentally friendly and compliant with RoHS standards.
  • Halogen and Antimony Free: Classified as a “Green” device, adhering to environmental regulations.
  • Compact SOT-23 Package: Ideal for space-constrained and portable applications.

Applications

  • Low Current and Low Voltage Switching Applications: Suitable for circuits requiring low current and voltage switching.
  • Logic Level Shifters: Often used in level shifting circuits due to its low threshold voltage.
  • DC-DC Converters: Used in power conversion circuits where high efficiency is required.
  • eMobility Applications: Applicable in electric vehicle and mobility-related electronics.
  • Power Management Applications: Ideal for various power management circuits where low on-state resistance is necessary.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS138 MOSFET?

    The maximum drain-source voltage (VDS) is 50V.

  2. What is the typical on-state resistance (RDS(ON)) of the BSS138 at VGS=10V?

    The typical on-state resistance (RDS(ON)) at VGS=10V is 2.5Ω.

  3. What is the gate threshold voltage (VGS(th)) range of the BSS138?

    The gate threshold voltage (VGS(th)) range is from 0.8V to 1.5V.

  4. What is the maximum junction temperature (Tj) of the BSS138?

    The maximum junction temperature (Tj) is 150°C.

  5. Is the BSS138 RoHS compliant and lead-free?

    Yes, the BSS138 is RoHS compliant and lead-free.

  6. What is the typical input capacitance (Ciss) of the BSS138?

    The typical input capacitance (Ciss) is 27 pF.

  7. What are some common applications of the BSS138 MOSFET?

    Common applications include low current and low voltage switching, logic level shifters, DC-DC converters, eMobility, and power management applications.

  8. What is the package type of the BSS138 MOSFET?

    The BSS138 is packaged in a SOT-23 surface mount package.

  9. Does the BSS138 have ESD protection?

    Yes, the BSS138 has ESD protected gates.

  10. What is the maximum continuous drain current (ID) of the BSS138?

    The maximum continuous drain current (ID) is 0.22A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:250mA
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:22800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):250mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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