BAP64-04W-TP
  • Share:

Micro Commercial Co BAP64-04W-TP

Manufacturer No:
BAP64-04W-TP
Manufacturer:
Micro Commercial Co
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 175V 200MW SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP64-04W-TP is a PIN diode manufactured by Micro Commercial Co. This component is designed for high-frequency applications and is known for its low capacitance and high isolation. The diode is packaged in a SOT323 format, making it suitable for a variety of electronic circuits where space is a concern.

Key Specifications

Parameter Value Unit
Voltage - Peak Reverse (Max) 175 V
Power Dissipation (Max) 200 mW
Current - Forward (If) (Max) 100 mA
Voltage - Forward (Vf) (Max) @ If 1.1 V
Current - Reverse Leakage @ Vr 10 μA
Capacitance @ Vr, F 0.5 pF @ 1V, 1MHz
Package / Case SOT323

Key Features

The BAP64-04W-TP PIN diode features low capacitance, which is crucial for high-frequency applications. It has a high peak reverse voltage of 175V, making it robust against voltage spikes. The diode also has a low forward voltage drop of 1.1V, which minimizes power loss. Additionally, its small SOT323 package makes it ideal for compact circuit designs.

Applications

The BAP64-04W-TP is commonly used in various high-frequency applications such as RF switches, attenuators, and phase shifters. It is also suitable for use in microwave circuits, cellular base stations, and other communication equipment where low capacitance and high isolation are required.

Q & A

  1. What is the peak reverse voltage of the BAP64-04W-TP?

    The peak reverse voltage of the BAP64-04W-TP is 175V.

  2. What is the maximum power dissipation of the BAP64-04W-TP?

    The maximum power dissipation of the BAP64-04W-TP is 200 mW.

  3. What is the forward voltage drop of the BAP64-04W-TP?

    The forward voltage drop of the BAP64-04W-TP is 1.1V.

  4. What is the package type of the BAP64-04W-TP?

    The BAP64-04W-TP is packaged in a SOT323 format.

  5. What are common applications for the BAP64-04W-TP?

    The BAP64-04W-TP is commonly used in RF switches, attenuators, phase shifters, microwave circuits, and cellular base stations.

  6. What is the capacitance of the BAP64-04W-TP at 1V and 1MHz?

    The capacitance of the BAP64-04W-TP at 1V and 1MHz is 0.5 pF.

  7. Is the BAP64-04W-TP still in production?

    No, the BAP64-04W-TP is listed as obsolete.

  8. What is the maximum forward current of the BAP64-04W-TP?

    The maximum forward current of the BAP64-04W-TP is 100 mA.

  9. What is the reverse leakage current of the BAP64-04W-TP?

    The reverse leakage current of the BAP64-04W-TP is 10 μA.

  10. Why is low capacitance important for the BAP64-04W-TP?

    Low capacitance is important for the BAP64-04W-TP because it ensures high performance in high-frequency applications by minimizing signal distortion and loss.

Product Attributes

Diode Type:PIN - Single
Voltage - Peak Reverse (Max):175V
Current - Max:100 mA
Capacitance @ Vr, F:0.5pF @ 1V, 1MHz
Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max):200 mW
Operating Temperature:-55°C ~ 150°C (TJ)
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.10
7,472

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP64-04W-TP BAP64-05W-TP
Manufacturer Micro Commercial Co Micro Commercial Co
Product Status Active Active
Diode Type PIN - Single PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (Max) 175V 175V
Current - Max 100 mA 100 mA
Capacitance @ Vr, F 0.5pF @ 1V, 1MHz 0.35pF @ 20V, 1MHz
Resistance @ If, F 1.35Ohm @ 100mA, 100MHz 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max) 200 mW 200 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Package / Case SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323

Related Product By Categories

CLA4605-085LF
CLA4605-085LF
Skyworks Solutions Inc.
RF DIODE PIN 60V 1W 3QFN
MMBD352WT1G
MMBD352WT1G
onsemi
RF DIODE SCHOTTKY 7V 200MW SC70
BAP70-02,115
BAP70-02,115
NXP USA Inc.
RF DIODE PIN 50V 415MW SOD523
PMBD353,235
PMBD353,235
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BAP51-02-TP
BAP51-02-TP
Micro Commercial Co
RF DIODE PIN 60V 715MW SOD523
BAP55LX,315
BAP55LX,315
NXP USA Inc.
RF DIODE PIN 50V 135MW 2DFN
BAP51-05W
BAP51-05W
NXP USA Inc.
PIN DIODE, 50V V(BR), SILICON
MBD330DWT1G
MBD330DWT1G
onsemi
RF DIODE SCHOTTKY 30V 120MW SC88
BAP65-02,115
BAP65-02,115
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BAP50-05,215
BAP50-05,215
NXP USA Inc.
RF DIODE PIN 50V 250MW TO236AB
1N5711W-7
1N5711W-7
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
BAP64LX/Z,315
BAP64LX/Z,315
NXP USA Inc.
DIODE PIN 60V 150MW DFN1006D-2

Related Product By Brand

BAS40-06HE3-TP
BAS40-06HE3-TP
Micro Commercial Co
SMALL SIGNAL SCHOTTKY DIODES 40V
BAV23C-TP
BAV23C-TP
Micro Commercial Co
350MWSMALLSIGNALDIODESSOT-23
BAV199DW-TP
BAV199DW-TP
Micro Commercial Co
DIODE RECT 85V 160MA SOT363
BAT43WS-TP
BAT43WS-TP
Micro Commercial Co
DIODE SCHOTTKY 30V 100MA SOD323
BAS20HE3-TP
BAS20HE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT23
BZX84C6V2W-TP
BZX84C6V2W-TP
Micro Commercial Co
DIODE ZENER 6.2V 200MW SOT323
MMBT3904-TP
MMBT3904-TP
Micro Commercial Co
TRANS NPN 40V 0.2A SOT23
MMBT3904HE3-TP
MMBT3904HE3-TP
Micro Commercial Co
TRANS NPN 40V 0.2A SOT23
BCP54-16-TP
BCP54-16-TP
Micro Commercial Co
TRANS NPN 45V 1A SOT223
SS8050-C-BP
SS8050-C-BP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
TIP115-BP
TIP115-BP
Micro Commercial Co
TRANS PNP DARL 60V 2A TO220AB
BSS8402DW-TP
BSS8402DW-TP
Micro Commercial Co
DUAL N+P-CHANNEL MOSFET, SOT-363