BA591115
  • Share:

NXP USA Inc. BA591115

Manufacturer No:
BA591115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BA591 - MIXER DIODE, VERY HIGH F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BA591115 is a high-performance RF diode manufactured by NXP USA Inc. This component is designed for band-switching applications and is particularly suited for use in very high frequency (VHF) circuits. The diode is packaged in a small SOD-323 surface mount package, making it ideal for compact and efficient electronic designs.

Key Specifications

ParameterValueUnit
Continuous Reverse Voltage35V
Continuous Forward Current100mA
Total Power Dissipation500mW
Diode Capacitance1.05pF
Diode Forward Resistance0.7Ohm
Package TypeSOD-323
Storage Temperature-65 to +150C
Junction Temperature-65 to +150C

Key Features

  • Ultra small SOD-323 surface mount package
  • Low diode capacitance: maximum 1.05 pF
  • Low diode forward resistance: maximum 0.7 Ohm
  • Small inductance
  • High performance in very high frequency applications
  • RoHS compliant

Applications

The BA591115 is primarily used in band-switching circuits, particularly in VHF television tuners and other surface mount band-switching applications. It is also suitable for use in various electronic devices that require high-frequency switching, such as radio frequency (RF) circuits and mixer diode applications.

Q & A

  1. What is the BA591115 diode used for?
    The BA591115 is used for band-switching applications, especially in very high frequency (VHF) circuits.
  2. What is the package type of the BA591115 diode?
    The BA591115 diode is packaged in a SOD-323 surface mount package.
  3. What is the maximum continuous reverse voltage of the BA591115 diode?
    The maximum continuous reverse voltage is 35 V.
  4. What is the maximum continuous forward current of the BA591115 diode?
    The maximum continuous forward current is 100 mA.
  5. What is the total power dissipation of the BA591115 diode?
    The total power dissipation is 500 mW.
  6. Is the BA591115 diode RoHS compliant?
    Yes, the BA591115 diode is RoHS compliant.
  7. What are the storage and junction temperature ranges for the BA591115 diode?
    The storage and junction temperature ranges are -65 to +150°C.
  8. What are some common applications of the BA591115 diode?
    Common applications include VHF television tuners and other surface mount band-switching circuits.
  9. Who manufactures the BA591115 diode?
    The BA591115 diode is manufactured by NXP USA Inc.
  10. Where can I purchase the BA591115 diode?
    The BA591115 diode can be purchased from various electronic component distributors such as Heisener, X-On Electronics, and others.

Product Attributes

Diode Type:Standard - Single
Voltage - Peak Reverse (Max):35V
Current - Max:100 mA
Capacitance @ Vr, F:0.9pF @ 3V, 1MHz
Resistance @ If, F:500mOhm @ 10mA, 100MHz
Power Dissipation (Max):500 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
0 Remaining View Similar

In Stock

$0.05
17,491

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BA591115 BA591,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Diode Type Standard - Single -
Voltage - Peak Reverse (Max) 35V -
Current - Max 100 mA -
Capacitance @ Vr, F 0.9pF @ 3V, 1MHz -
Resistance @ If, F 500mOhm @ 10mA, 100MHz -
Power Dissipation (Max) 500 mW -
Operating Temperature -65°C ~ 150°C (TJ) -
Package / Case SC-76, SOD-323 -
Supplier Device Package SOD-323 -

Related Product By Categories

CLA4606-085LF
CLA4606-085LF
Skyworks Solutions Inc.
RF DIODE PIN 75V 3W 3QFN
MMBD301LT1G
MMBD301LT1G
onsemi
DIODE SCHOTTKY 30V 200MW SOT23-3
BAP64-05W-TP
BAP64-05W-TP
Micro Commercial Co
RF DIODE PIN 175V 200MW SOT323
PMBD353,235
PMBD353,235
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BAP51-02-TP
BAP51-02-TP
Micro Commercial Co
RF DIODE PIN 60V 715MW SOD523
BAP55LX,315
BAP55LX,315
NXP USA Inc.
RF DIODE PIN 50V 135MW 2DFN
BA591115
BA591115
NXP USA Inc.
BA591 - MIXER DIODE, VERY HIGH F
1N5711WS-7-F
1N5711WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
BAP50-03-TP
BAP50-03-TP
Micro Commercial Co
RF DIODE PIN 50V 200MW SOD323
BA591,115
BA591,115
NXP USA Inc.
BAND-SWITCHING DIODE
BAP51-05W,115
BAP51-05W,115
NXP USA Inc.
RF DIODE PIN 50V 240MW SOT323-3
BAP64LX/Z,315
BAP64LX/Z,315
NXP USA Inc.
DIODE PIN 60V 150MW DFN1006D-2

Related Product By Brand

PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
PCA8574TS,118
PCA8574TS,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 20SSOP
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO