BA591115
  • Share:

NXP USA Inc. BA591115

Manufacturer No:
BA591115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BA591 - MIXER DIODE, VERY HIGH F
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BA591115 is a high-performance RF diode manufactured by NXP USA Inc. This component is designed for band-switching applications and is particularly suited for use in very high frequency (VHF) circuits. The diode is packaged in a small SOD-323 surface mount package, making it ideal for compact and efficient electronic designs.

Key Specifications

ParameterValueUnit
Continuous Reverse Voltage35V
Continuous Forward Current100mA
Total Power Dissipation500mW
Diode Capacitance1.05pF
Diode Forward Resistance0.7Ohm
Package TypeSOD-323
Storage Temperature-65 to +150C
Junction Temperature-65 to +150C

Key Features

  • Ultra small SOD-323 surface mount package
  • Low diode capacitance: maximum 1.05 pF
  • Low diode forward resistance: maximum 0.7 Ohm
  • Small inductance
  • High performance in very high frequency applications
  • RoHS compliant

Applications

The BA591115 is primarily used in band-switching circuits, particularly in VHF television tuners and other surface mount band-switching applications. It is also suitable for use in various electronic devices that require high-frequency switching, such as radio frequency (RF) circuits and mixer diode applications.

Q & A

  1. What is the BA591115 diode used for?
    The BA591115 is used for band-switching applications, especially in very high frequency (VHF) circuits.
  2. What is the package type of the BA591115 diode?
    The BA591115 diode is packaged in a SOD-323 surface mount package.
  3. What is the maximum continuous reverse voltage of the BA591115 diode?
    The maximum continuous reverse voltage is 35 V.
  4. What is the maximum continuous forward current of the BA591115 diode?
    The maximum continuous forward current is 100 mA.
  5. What is the total power dissipation of the BA591115 diode?
    The total power dissipation is 500 mW.
  6. Is the BA591115 diode RoHS compliant?
    Yes, the BA591115 diode is RoHS compliant.
  7. What are the storage and junction temperature ranges for the BA591115 diode?
    The storage and junction temperature ranges are -65 to +150°C.
  8. What are some common applications of the BA591115 diode?
    Common applications include VHF television tuners and other surface mount band-switching circuits.
  9. Who manufactures the BA591115 diode?
    The BA591115 diode is manufactured by NXP USA Inc.
  10. Where can I purchase the BA591115 diode?
    The BA591115 diode can be purchased from various electronic component distributors such as Heisener, X-On Electronics, and others.

Product Attributes

Diode Type:Standard - Single
Voltage - Peak Reverse (Max):35V
Current - Max:100 mA
Capacitance @ Vr, F:0.9pF @ 3V, 1MHz
Resistance @ If, F:500mOhm @ 10mA, 100MHz
Power Dissipation (Max):500 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
0 Remaining View Similar

In Stock

$0.05
17,491

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50TX
DD26S2S50TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BA591115 BA591,115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Diode Type Standard - Single -
Voltage - Peak Reverse (Max) 35V -
Current - Max 100 mA -
Capacitance @ Vr, F 0.9pF @ 3V, 1MHz -
Resistance @ If, F 500mOhm @ 10mA, 100MHz -
Power Dissipation (Max) 500 mW -
Operating Temperature -65°C ~ 150°C (TJ) -
Package / Case SC-76, SOD-323 -
Supplier Device Package SOD-323 -

Related Product By Categories

CLA4606-085LF
CLA4606-085LF
Skyworks Solutions Inc.
RF DIODE PIN 75V 3W 3QFN
CLA4605-085LF
CLA4605-085LF
Skyworks Solutions Inc.
RF DIODE PIN 60V 1W 3QFN
BAP51-02,115
BAP51-02,115
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAP64-05W-TP
BAP64-05W-TP
Micro Commercial Co
RF DIODE PIN 175V 200MW SOT323
PMBD353,235
PMBD353,235
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BAP70-02/AX
BAP70-02/AX
NXP Semiconductors
PIN DIODE PIN - SINGLE 50V 415MW
MMBD354LT1G
MMBD354LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
BAP64-02,115
BAP64-02,115
NXP USA Inc.
RF DIODE PIN 175V 715MW SOD523
BAP64-03,115
BAP64-03,115
NXP USA Inc.
RF DIODE PIN 175V 500MW SOD323
BA891,115
BA891,115
NXP USA Inc.
DIODE STANDARD 35V 715MW SOD523
BAP64LX,315
BAP64LX,315
NXP USA Inc.
RF DIODE PIN 60V 150MW SOD2
MMBD301LT1
MMBD301LT1
onsemi
DIODE SCHOTTKY 200MW 30V SOT23

Related Product By Brand

Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
TJA1048T,118
TJA1048T,118
NXP USA Inc.
IC TRANSCEIVER HALF 2/2 14SO
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO