BA591,115
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NXP USA Inc. BA591,115

Manufacturer No:
BA591,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
BAND-SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BA591,115 is a high-performance band-switching diode manufactured by NXP USA Inc. This component is designed for specific applications requiring high-frequency switching and is particularly optimized for use in RF and wireless systems. The BA591,115 is housed in a compact SOD-323 package, making it suitable for space-constrained designs. It is known for its small size and dedicated function integration, which enhances its performance in various electronic devices.

Key Specifications

Parameter Conditions Min Typ Max Unit
Forward Voltage (VF) IF = 10 mA - - 1 V
Reverse Current (IR) VR = 20 V - - 20 nA
Diode Capacitance (Cd) at 1 MHz VR = 1 V - 0.8 1.05 pF
Diode Capacitance (Cd) at 100 MHz VR = 3 V - 0.65 0.9 pF
Diode Forward Resistance (rD) IF = 3 mA - 0.45 0.7 Ω
Series Inductance (LS) - - - 2 nH
Package - - - SOD-323 -

Key Features

  • High Performance: The BA591,115 is optimized for high-frequency applications, making it suitable for RF and wireless systems.
  • Compact Package: It is housed in a small SOD-323 package, which is ideal for compact installations.
  • Low Diode Capacitance: The component has low diode capacitance, which is crucial for high-frequency switching applications.
  • Low Forward Resistance: It features low diode forward resistance, enhancing its performance in switching applications.
  • RoHS Compliant: The BA591,115 is RoHS compliant, ensuring environmental sustainability.

Applications

  • RF and Wireless Systems: The BA591,115 is primarily used in RF and wireless systems due to its high-frequency switching capabilities.
  • Band-Switching Applications: It is designed for band-switching applications, where high performance and low capacitance are essential.
  • Electronic Devices: It can be used in various electronic devices that require high-frequency switching, such as mixers, switches, and other RF components.

Q & A

  1. What is the BA591,115 used for?

    The BA591,115 is a band-switching diode used in high-frequency applications, particularly in RF and wireless systems.

  2. What package type does the BA591,115 come in?

    The BA591,115 is housed in a SOD-323 package.

  3. What are the key specifications of the BA591,115?

    Key specifications include forward voltage up to 1 V, reverse current up to 20 nA, and diode capacitance ranging from 0.8 to 1.05 pF at 1 MHz.

  4. Is the BA591,115 RoHS compliant?
  5. What are the typical applications of the BA591,115?
  6. What is the forward resistance of the BA591,115?
  7. What is the series inductance of the BA591,115?
  8. Where can I find the datasheet for the BA591,115?
  9. What is the minimum order quantity for the BA591,115?
  10. Is the BA591,115 available in bulk?

Product Attributes

Diode Type:- 
Voltage - Peak Reverse (Max):- 
Current - Max:- 
Capacitance @ Vr, F:- 
Resistance @ If, F:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BA591,115 BA591115 BA891,115 BA591,135
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Obsolete
Diode Type - Standard - Single Standard - Single Standard - Single
Voltage - Peak Reverse (Max) - 35V 35V 35V
Current - Max - 100 mA 100 mA 100 mA
Capacitance @ Vr, F - 0.9pF @ 3V, 1MHz 0.9pF @ 3V, 1MHz 0.9pF @ 3V, 1MHz
Resistance @ If, F - 500mOhm @ 10mA, 100MHz 500mOhm @ 10mA, 100MHz 500mOhm @ 10mA, 100MHz
Power Dissipation (Max) - 500 mW 715 mW 500 mW
Operating Temperature - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case - SC-76, SOD-323 SC-79, SOD-523 SC-76, SOD-323
Supplier Device Package - SOD-323 SOD-523 SOD-323

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