BAP50-05,215
  • Share:

NXP USA Inc. BAP50-05,215

Manufacturer No:
BAP50-05,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 50V 250MW TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP50-05,215 is a silicon PIN diode manufactured by NXP USA Inc. This component is designed for high-frequency applications and is known for its low capacitance and high isolation characteristics. The diode is packaged in a TO-236-3, SC-59, or SOT-23-3 case, making it suitable for surface mount technology (SMT) and other compact electronic designs. The BAP50-05,215 is particularly useful in RF circuits, switches, and attenuators due to its performance at high frequencies.

Key Specifications

ParameterValueUnit
Maximum Forward Current50mA
Maximum Reverse Voltage50V
Maximum Power Dissipation250mW
Package TypeTO-236-3, SC-59, SOT-23-3
RoHS StatusCompliant
Minimum Order Quantity3000Pieces
PackingReel 7" Q3/T4

Key Features

  • Low capacitance and high isolation, making it suitable for high-frequency applications.
  • High power handling capability of up to 250 mW.
  • Compact packaging options (TO-236-3, SC-59, SOT-23-3) for SMT designs.
  • RoHS compliant, ensuring environmental sustainability.
  • Dual common cathode configuration for versatile use in RF circuits.

Applications

The BAP50-05,215 is widely used in various RF and microwave applications, including:

  • RF switches and attenuators.
  • High-frequency amplifiers and mixers.
  • Antenna tuning and matching circuits.
  • Wireless communication systems.
  • Medical and industrial equipment requiring high-frequency signal handling.

Q & A

  1. What is the maximum forward current of the BAP50-05,215?
    The maximum forward current is 50 mA.
  2. What is the maximum reverse voltage of the BAP50-05,215?
    The maximum reverse voltage is 50 V.
  3. What are the packaging options for the BAP50-05,215?
    The diode is available in TO-236-3, SC-59, and SOT-23-3 packages.
  4. Is the BAP50-05,215 RoHS compliant?
    Yes, the BAP50-05,215 is RoHS compliant.
  5. What is the minimum order quantity for the BAP50-05,215?
    The minimum order quantity is 3000 pieces.
  6. What are the typical applications of the BAP50-05,215?
    It is used in RF switches, attenuators, high-frequency amplifiers, antenna tuning circuits, and wireless communication systems.
  7. What is the power handling capability of the BAP50-05,215?
    The diode can handle up to 250 mW of power.
  8. Is the BAP50-05,215 suitable for surface mount technology (SMT)?
    Yes, it is suitable for SMT due to its compact packaging options.
  9. What is the lead time for the BAP50-05,215?
    The lead time is approximately 99 weeks.
  10. What is the budgetary price for a single unit of the BAP50-05,215?
    The budgetary price is approximately $0.09 USD per unit.

Product Attributes

Diode Type:PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (Max):50V
Current - Max:50 mA
Capacitance @ Vr, F:0.5pF @ 5V, 1MHz
Resistance @ If, F:5Ohm @ 10mA, 100MHz
Power Dissipation (Max):250 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

$0.13
6,463

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP50-05,215 BAP70-05,215 BAP50-04,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Active
Diode Type PIN - 1 Pair Common Cathode PIN - 1 Pair Common Cathode -
Voltage - Peak Reverse (Max) 50V 50V -
Current - Max 50 mA 100 mA -
Capacitance @ Vr, F 0.5pF @ 5V, 1MHz 0.3pF @ 20V, 1MHz -
Resistance @ If, F 5Ohm @ 10mA, 100MHz 1.9Ohm @ 100mA, 100MHz -
Power Dissipation (Max) 250 mW 250 mW -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) -

Related Product By Categories

BAT17,215
BAT17,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BAP65-03,115
BAP65-03,115
NXP USA Inc.
RF DIODE PIN 30V 500MW SOD323
MMBD301LT1G
MMBD301LT1G
onsemi
DIODE SCHOTTKY 30V 200MW SOT23-3
BAP64-02,115
BAP64-02,115
NXP USA Inc.
RF DIODE PIN 175V 715MW SOD523
MMBD452LT1G
MMBD452LT1G
onsemi
DIODE SCHOTTKY 30V 225MW SOT23-3
BAP64Q,125
BAP64Q,125
NXP USA Inc.
RF DIODE PIN 100V 125MW 5TSOP
BAP65-02,115
BAP65-02,115
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BAP70Q,125
BAP70Q,125
NXP USA Inc.
RF DIODE PIN 50V 125MW 5TSOP
BAP50-03,135
BAP50-03,135
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BA891,115
BA891,115
NXP USA Inc.
DIODE STANDARD 35V 715MW SOD523
BAP64-05W,135
BAP64-05W,135
NXP USA Inc.
RF DIODE PIN 100V 240MW SOT323-3
BA591,135
BA591,135
NXP USA Inc.
DIODE STANDARD 35V 500MW SOD323

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES