BAP50-05,215
  • Share:

NXP USA Inc. BAP50-05,215

Manufacturer No:
BAP50-05,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 50V 250MW TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP50-05,215 is a silicon PIN diode manufactured by NXP USA Inc. This component is designed for high-frequency applications and is known for its low capacitance and high isolation characteristics. The diode is packaged in a TO-236-3, SC-59, or SOT-23-3 case, making it suitable for surface mount technology (SMT) and other compact electronic designs. The BAP50-05,215 is particularly useful in RF circuits, switches, and attenuators due to its performance at high frequencies.

Key Specifications

ParameterValueUnit
Maximum Forward Current50mA
Maximum Reverse Voltage50V
Maximum Power Dissipation250mW
Package TypeTO-236-3, SC-59, SOT-23-3
RoHS StatusCompliant
Minimum Order Quantity3000Pieces
PackingReel 7" Q3/T4

Key Features

  • Low capacitance and high isolation, making it suitable for high-frequency applications.
  • High power handling capability of up to 250 mW.
  • Compact packaging options (TO-236-3, SC-59, SOT-23-3) for SMT designs.
  • RoHS compliant, ensuring environmental sustainability.
  • Dual common cathode configuration for versatile use in RF circuits.

Applications

The BAP50-05,215 is widely used in various RF and microwave applications, including:

  • RF switches and attenuators.
  • High-frequency amplifiers and mixers.
  • Antenna tuning and matching circuits.
  • Wireless communication systems.
  • Medical and industrial equipment requiring high-frequency signal handling.

Q & A

  1. What is the maximum forward current of the BAP50-05,215?
    The maximum forward current is 50 mA.
  2. What is the maximum reverse voltage of the BAP50-05,215?
    The maximum reverse voltage is 50 V.
  3. What are the packaging options for the BAP50-05,215?
    The diode is available in TO-236-3, SC-59, and SOT-23-3 packages.
  4. Is the BAP50-05,215 RoHS compliant?
    Yes, the BAP50-05,215 is RoHS compliant.
  5. What is the minimum order quantity for the BAP50-05,215?
    The minimum order quantity is 3000 pieces.
  6. What are the typical applications of the BAP50-05,215?
    It is used in RF switches, attenuators, high-frequency amplifiers, antenna tuning circuits, and wireless communication systems.
  7. What is the power handling capability of the BAP50-05,215?
    The diode can handle up to 250 mW of power.
  8. Is the BAP50-05,215 suitable for surface mount technology (SMT)?
    Yes, it is suitable for SMT due to its compact packaging options.
  9. What is the lead time for the BAP50-05,215?
    The lead time is approximately 99 weeks.
  10. What is the budgetary price for a single unit of the BAP50-05,215?
    The budgetary price is approximately $0.09 USD per unit.

Product Attributes

Diode Type:PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (Max):50V
Current - Max:50 mA
Capacitance @ Vr, F:0.5pF @ 5V, 1MHz
Resistance @ If, F:5Ohm @ 10mA, 100MHz
Power Dissipation (Max):250 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

$0.13
6,463

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP50-05,215 BAP70-05,215 BAP50-04,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Active
Diode Type PIN - 1 Pair Common Cathode PIN - 1 Pair Common Cathode -
Voltage - Peak Reverse (Max) 50V 50V -
Current - Max 50 mA 100 mA -
Capacitance @ Vr, F 0.5pF @ 5V, 1MHz 0.3pF @ 20V, 1MHz -
Resistance @ If, F 5Ohm @ 10mA, 100MHz 1.9Ohm @ 100mA, 100MHz -
Power Dissipation (Max) 250 mW 250 mW -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) -

Related Product By Categories

1N5711W-7-F
1N5711W-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
BAP64-04W,115
BAP64-04W,115
NXP USA Inc.
RF DIODE PIN 100V 240MW SOT323
MMBD354LT1G
MMBD354LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
MMBD701LT1G
MMBD701LT1G
onsemi
DIODE SCHOTTKY 70V 200MW SOT23-3
MMBD452LT1G
MMBD452LT1G
onsemi
DIODE SCHOTTKY 30V 225MW SOT23-3
MBD330DWT1G
MBD330DWT1G
onsemi
RF DIODE SCHOTTKY 30V 120MW SC88
BAP65-02,115
BAP65-02,115
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAP51-05W,115
BAP51-05W,115
NXP USA Inc.
RF DIODE PIN 50V 240MW SOT323-3
BAP70-03,115
BAP70-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
MMBD301LT1
MMBD301LT1
onsemi
DIODE SCHOTTKY 200MW 30V SOT23
1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323

Related Product By Brand

BAP51-02,315
BAP51-02,315
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
SAF7755HV/N205K
SAF7755HV/N205K
NXP USA Inc.
DSP AUDIO MULTI-TUNER
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
LPC1764FBD100,551
LPC1764FBD100,551
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 100LQFP
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74LVC2G32DC-Q100125
74LVC2G32DC-Q100125
NXP USA Inc.
OR GATE, LVC/LCX/Z SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX