Overview
The BAP50-03,115 is a general-purpose PIN diode produced by NXP USA Inc. This component is designed in an SOD323 small plastic SMD package, making it suitable for various surface-mount applications. The diode is known for its low diode capacitance and low diode forward resistance, which are critical parameters for its performance in RF and other high-frequency applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Reverse Voltage (VR) | - | - | - | 50 | V |
| Forward Current (IF) | - | - | - | 50 | mA |
| Total Power Dissipation (Ptot) | Tsp ≤ 90 °C | - | - | 500 | mW |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| Junction Temperature (Tj) | - | -65 | - | 150 | °C |
| Forward Voltage (VF) | IF = 50 mA | - | 0.95 | 1.1 | V |
| Reverse Current (IR) | VR = 50 V | - | - | 100 | nA |
| Diode Capacitance (Cd) | VR = 5 V, f = 1 MHz | - | 0.2 | 0.35 | pF |
| Diode Forward Resistance (rD) | IF = 10 mA | - | 3 | 5 | Ω |
Key Features
- Low diode capacitance, typically 0.2 to 0.35 pF at 5 V and 1 MHz.
- Low diode forward resistance, typically 3 to 5 Ω at 10 mA.
- High reverse voltage rating of 50 V.
- Forward current rating of up to 50 mA.
- Compact SOD323 surface-mount package.
Applications
The BAP50-03,115 is primarily used in general RF applications due to its low capacitance and forward resistance. It is suitable for various high-frequency circuits, including switching circuits, attenuators, and RF signal processing applications.
Q & A
- What is the maximum reverse voltage of the BAP50-03,115? The maximum reverse voltage is 50 V.
- What is the maximum forward current rating of the BAP50-03,115? The maximum forward current rating is 50 mA.
- What is the typical diode capacitance of the BAP50-03,115 at 5 V and 1 MHz? The typical diode capacitance is 0.2 to 0.35 pF.
- What is the typical diode forward resistance of the BAP50-03,115 at 10 mA? The typical diode forward resistance is 3 to 5 Ω.
- In what package is the BAP50-03,115 available? The BAP50-03,115 is available in an SOD323 small plastic SMD package.
- What are the storage and junction temperature limits for the BAP50-03,115? The storage temperature range is -65 °C to 150 °C, and the junction temperature range is also -65 °C to 150 °C.
- What is the total power dissipation limit for the BAP50-03,115? The total power dissipation limit is 500 mW at Tsp ≤ 90 °C.
- Is the BAP50-03,115 still in production? The BAP50-03,115 is obsolete and no longer manufactured.
- What are some common applications of the BAP50-03,115? It is commonly used in general RF applications, including switching circuits, attenuators, and RF signal processing.
- What is the thermal resistance from junction to solder point for the BAP50-03,115? The thermal resistance from junction to solder point is typically 85 K/W.
