BAP64-04W,115
  • Share:

NXP USA Inc. BAP64-04W,115

Manufacturer No:
BAP64-04W,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 100V 240MW SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP64-04W,115 is a silicon PIN diode produced by NXP USA Inc. This component is part of the BAP64 series and is designed for high-frequency applications. It features two planar PIN diodes in a series configuration, packaged in a small SOT323 (SC-70) surface-mount package. The diode is capable of operating up to 3 GHz, making it ideal for various RF and mobile communication applications. Its high-voltage handling, low diode capacitance, and low forward resistance contribute to improved performance and battery life in devices such as mobile phones and cordless phones.

Key Specifications

AttributeValue
Packaging StyleSOT-323 (SC-70)
Mounting MethodSurface Mount
Voltage - Peak Reverse (Max)100 V
Current - Max100 mA
Capacitance @ Vr, F0.35 pF @ 20 V, 1 MHz
Resistance @ If, F1.35 Ohm @ 100 mA, 100 MHz
Power Dissipation (Max)240 mW
Operating Temperature-65°C ~ 150°C (TJ)

Key Features

  • High voltage, current controlled
  • RF resistor for RF attenuators and switches
  • Low diode capacitance
  • Low diode forward resistance
  • Low series inductance
  • Operates up to 3 GHz

Applications

The BAP64-04W,115 is primarily used in RF attenuators and switches. Its high-frequency capabilities and low distortion levels make it suitable for a wide range of mobile communications and RF applications, including mobile phones and cordless phones.

Q & A

  1. What is the maximum operating frequency of the BAP64-04W,115? The BAP64-04W,115 operates up to 3 GHz.
  2. What is the packaging style of the BAP64-04W,115? The component is packaged in a SOT-323 (SC-70) surface-mount package.
  3. What is the maximum peak reverse voltage of the BAP64-04W,115? The maximum peak reverse voltage is 100 V.
  4. What is the maximum current rating of the BAP64-04W,115? The maximum current rating is 100 mA.
  5. What are the typical applications of the BAP64-04W,115? It is used in RF attenuators and switches, and in various mobile communication devices.
  6. What are the key features of the BAP64-04W,115? Key features include high voltage, current controlled, low diode capacitance, low diode forward resistance, and low series inductance.
  7. What is the operating temperature range of the BAP64-04W,115? The operating temperature range is -65°C to 150°C (TJ).
  8. What is the power dissipation limit of the BAP64-04W,115? The maximum power dissipation is 240 mW.
  9. Is the BAP64-04W,115 suitable for high-frequency applications? Yes, it is designed for high-frequency applications up to 3 GHz.
  10. How many diodes are in the BAP64-04W,115 package? The package contains two planar PIN diodes in a series configuration.

Product Attributes

Diode Type:PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):100V
Current - Max:100 mA
Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max):240 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70
0 Remaining View Similar

In Stock

$0.42
433

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP64-04W,115 BAP64-05W,115 BAP64-06W,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
Diode Type PIN - 1 Pair Series Connection PIN - 1 Pair Common Cathode PIN - 1 Pair Common Anode
Voltage - Peak Reverse (Max) 100V 100V 100V
Current - Max 100 mA 100 mA 100 mA
Capacitance @ Vr, F 0.35pF @ 20V, 1MHz 0.35pF @ 20V, 1MHz 0.35pF @ 20V, 1MHz
Resistance @ If, F 1.35Ohm @ 100mA, 100MHz 1.35Ohm @ 100mA, 100MHz 1.35Ohm @ 100mA, 100MHz
Power Dissipation (Max) 240 mW 240 mW 240 mW
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SC-70 SC-70 SC-70

Related Product By Categories

PMBD353,235
PMBD353,235
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
MMBD354LT1G
MMBD354LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
MMBD452LT1G
MMBD452LT1G
onsemi
DIODE SCHOTTKY 30V 225MW SOT23-3
MBD330DWT1G
MBD330DWT1G
onsemi
RF DIODE SCHOTTKY 30V 120MW SC88
BAP70Q,125
BAP70Q,125
NXP USA Inc.
RF DIODE PIN 50V 125MW 5TSOP
BAP64-04W-TP
BAP64-04W-TP
Micro Commercial Co
RF DIODE PIN 175V 200MW SOT323
BAP63-02,115
BAP63-02,115
NXP USA Inc.
RF DIODE PIN 50V 715MW SOD523
1N5711W-7
1N5711W-7
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
MMBD301LT1
MMBD301LT1
onsemi
DIODE SCHOTTKY 200MW 30V SOT23
MMBV3401LT1
MMBV3401LT1
onsemi
DIODE TUNING SS 35V SOT23
1N5711#T25
1N5711#T25
Broadcom Limited
RF DIODE SCHOTTKY 70V 250MW

Related Product By Brand

PMEG45U10EPD146
PMEG45U10EPD146
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
BUK98150-55A,135
BUK98150-55A,135
NXP USA Inc.
MOSFET N-CH 55V 5.5A SOT-223
2N7002T,215
2N7002T,215
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
LS1012AXN7KKB
LS1012AXN7KKB
NXP USA Inc.
LS1012A XT 1GHZ RV2
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
MMA8652FCR1
MMA8652FCR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C 10DFN