1N5711
  • Share:

STMicroelectronics 1N5711

Manufacturer No:
1N5711
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
RF DIODE SCHOTTKY 70V 430MW DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5711 is a small signal Schottky diode manufactured by STMicroelectronics. It is a metal to silicon junction diode known for its high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities. This diode is primarily intended for high-level UHF/VHF detection and pulse applications, offering a broad dynamic range. Matched batches are available on request, making it suitable for applications requiring consistent performance across multiple units.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 70 V
IF (Forward Continuous Current) at Ta = 25°C 15 mA
Ptot (Power Dissipation) at Ta = 25°C 430 mW
Tstg (Storage and Junction Temperature Range) -65 to 200 °C
TL (Maximum Lead Temperature for Soldering during 10s at 4mm from Case) 230 °C
VF (Forward Voltage) at IF = 1mA and Tamb = 25°C 0.41 V
IR (Reverse Current) at VR = 50V and Tamb = 25°C 0.2 µA
C (Capacitance) at VR = 0V and f = 1MHz 2 pF
τ (Switching Time) at IF = 5mA and Tamb = 25°C 100 ps

Key Features

  • Guardring for over-voltage protection and high reliability
  • Picosecond switching speed
  • Very low turn-on voltage (VF = 0.41V at IF = 1mA)
  • High breakdown voltage up to 70V
  • Matched characteristics available on request

Applications

The 1N5711 Schottky diode is primarily used in high-level UHF/VHF detection and pulse applications. Its ultrafast switching and low turn-on voltage make it suitable for a broad range of dynamic applications, including:

  • High-frequency signal detection
  • Pulse applications requiring fast switching times
  • RF and microwave circuits
  • General-purpose switching and rectification in high-speed circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N5711 Schottky diode?

    The maximum repetitive peak reverse voltage (VRRM) is 70V.

  2. What is the forward continuous current (IF) rating of the 1N5711 at 25°C?

    The forward continuous current (IF) rating at 25°C is 15mA.

  3. What is the typical forward voltage (VF) of the 1N5711 at 1mA current?

    The typical forward voltage (VF) at 1mA current is 0.41V.

  4. What is the maximum junction temperature (Tj) for the 1N5711?

    The maximum junction temperature (Tj) is 200°C.

  5. What is the package type of the 1N5711 Schottky diode?

    The package type is DO-35.

  6. What are the key features of the 1N5711 Schottky diode?

    The key features include guardring for over-voltage protection, picosecond switching speed, very low turn-on voltage, high breakdown voltage, and matched characteristics available on request.

  7. What are the typical applications of the 1N5711 Schottky diode?

    Typical applications include high-level UHF/VHF detection, pulse applications, RF and microwave circuits, and general-purpose switching and rectification in high-speed circuits.

  8. What is the maximum lead temperature for soldering the 1N5711?

    The maximum lead temperature for soldering during 10 seconds at 4mm from the case is 230°C.

  9. Is the 1N5711 RoHS compliant?
  10. What is the thermal resistance (Rth(j-a)) of the 1N5711?

    The thermal resistance (Rth(j-a)) is 400°C/W on an infinite heatsink with a 4mm lead length.

  11. Can the 1N5711 be used in life support devices or systems?

Product Attributes

Diode Type:Schottky - Single
Voltage - Peak Reverse (Max):70V
Current - Max:15 mA
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Resistance @ If, F:- 
Power Dissipation (Max):430 mW
Operating Temperature:-65°C ~ 200°C (TJ)
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
0 Remaining View Similar

In Stock

$0.35
715

Please send RFQ , we will respond immediately.

Related Product By Categories

MMBD353LT1G
MMBD353LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
BAP51-05W
BAP51-05W
NXP USA Inc.
PIN DIODE, 50V V(BR), SILICON
MMBD452LT1G
MMBD452LT1G
onsemi
DIODE SCHOTTKY 30V 225MW SOT23-3
MMDL301T1G
MMDL301T1G
onsemi
DIODE SCHOTTKY 30V 200MW SOD323
MBD330DWT1G
MBD330DWT1G
onsemi
RF DIODE SCHOTTKY 30V 120MW SC88
BAP50-03,135
BAP50-03,135
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BA891,115
BA891,115
NXP USA Inc.
DIODE STANDARD 35V 715MW SOD523
BAP64LX,315
BAP64LX,315
NXP USA Inc.
RF DIODE PIN 60V 150MW SOD2
BAP51-05W,115
BAP51-05W,115
NXP USA Inc.
RF DIODE PIN 50V 240MW SOT323-3
BAP50-02,115
BAP50-02,115
NXP USA Inc.
RF DIODE PIN 50V 715MW SOD523
1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
MMBD301LT1
MMBD301LT1
onsemi
DIODE SCHOTTKY 200MW 30V SOT23

Related Product By Brand

T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
FDA801B-VYT
FDA801B-VYT
STMicroelectronics
IC AMP CLASS D QUAD 50W 64LQFP
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
VNP35N07FI
VNP35N07FI
STMicroelectronics
IC PWR DRVR N-CH 1:1 ISOWATT220
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK