1N5711
  • Share:

STMicroelectronics 1N5711

Manufacturer No:
1N5711
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
RF DIODE SCHOTTKY 70V 430MW DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N5711 is a small signal Schottky diode manufactured by STMicroelectronics. It is a metal to silicon junction diode known for its high breakdown voltage, low turn-on voltage, and ultrafast switching capabilities. This diode is primarily intended for high-level UHF/VHF detection and pulse applications, offering a broad dynamic range. Matched batches are available on request, making it suitable for applications requiring consistent performance across multiple units.

Key Specifications

Parameter Value Unit
VRRM (Repetitive Peak Reverse Voltage) 70 V
IF (Forward Continuous Current) at Ta = 25°C 15 mA
Ptot (Power Dissipation) at Ta = 25°C 430 mW
Tstg (Storage and Junction Temperature Range) -65 to 200 °C
TL (Maximum Lead Temperature for Soldering during 10s at 4mm from Case) 230 °C
VF (Forward Voltage) at IF = 1mA and Tamb = 25°C 0.41 V
IR (Reverse Current) at VR = 50V and Tamb = 25°C 0.2 µA
C (Capacitance) at VR = 0V and f = 1MHz 2 pF
τ (Switching Time) at IF = 5mA and Tamb = 25°C 100 ps

Key Features

  • Guardring for over-voltage protection and high reliability
  • Picosecond switching speed
  • Very low turn-on voltage (VF = 0.41V at IF = 1mA)
  • High breakdown voltage up to 70V
  • Matched characteristics available on request

Applications

The 1N5711 Schottky diode is primarily used in high-level UHF/VHF detection and pulse applications. Its ultrafast switching and low turn-on voltage make it suitable for a broad range of dynamic applications, including:

  • High-frequency signal detection
  • Pulse applications requiring fast switching times
  • RF and microwave circuits
  • General-purpose switching and rectification in high-speed circuits

Q & A

  1. What is the maximum repetitive peak reverse voltage (VRRM) of the 1N5711 Schottky diode?

    The maximum repetitive peak reverse voltage (VRRM) is 70V.

  2. What is the forward continuous current (IF) rating of the 1N5711 at 25°C?

    The forward continuous current (IF) rating at 25°C is 15mA.

  3. What is the typical forward voltage (VF) of the 1N5711 at 1mA current?

    The typical forward voltage (VF) at 1mA current is 0.41V.

  4. What is the maximum junction temperature (Tj) for the 1N5711?

    The maximum junction temperature (Tj) is 200°C.

  5. What is the package type of the 1N5711 Schottky diode?

    The package type is DO-35.

  6. What are the key features of the 1N5711 Schottky diode?

    The key features include guardring for over-voltage protection, picosecond switching speed, very low turn-on voltage, high breakdown voltage, and matched characteristics available on request.

  7. What are the typical applications of the 1N5711 Schottky diode?

    Typical applications include high-level UHF/VHF detection, pulse applications, RF and microwave circuits, and general-purpose switching and rectification in high-speed circuits.

  8. What is the maximum lead temperature for soldering the 1N5711?

    The maximum lead temperature for soldering during 10 seconds at 4mm from the case is 230°C.

  9. Is the 1N5711 RoHS compliant?
  10. What is the thermal resistance (Rth(j-a)) of the 1N5711?

    The thermal resistance (Rth(j-a)) is 400°C/W on an infinite heatsink with a 4mm lead length.

  11. Can the 1N5711 be used in life support devices or systems?

Product Attributes

Diode Type:Schottky - Single
Voltage - Peak Reverse (Max):70V
Current - Max:15 mA
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Resistance @ If, F:- 
Power Dissipation (Max):430 mW
Operating Temperature:-65°C ~ 200°C (TJ)
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
0 Remaining View Similar

In Stock

$0.35
715

Please send RFQ , we will respond immediately.

Related Product By Categories

BAP51-02,115
BAP51-02,115
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
BAP55LX,315
BAP55LX,315
NXP USA Inc.
RF DIODE PIN 50V 135MW 2DFN
BAP51-05W
BAP51-05W
NXP USA Inc.
PIN DIODE, 50V V(BR), SILICON
MMBD330T1G
MMBD330T1G
onsemi
DIODE SCHOTTKY 30V 120MW SC70-3
MMDL301T1G
MMDL301T1G
onsemi
DIODE SCHOTTKY 30V 200MW SOD323
BAP65-02,115
BAP65-02,115
NXP USA Inc.
RF DIODE PIN 30V 715MW SOD523
BAP50-03-TP
BAP50-03-TP
Micro Commercial Co
RF DIODE PIN 50V 200MW SOD323
BA891,115
BA891,115
NXP USA Inc.
DIODE STANDARD 35V 715MW SOD523
BAP50-05,215
BAP50-05,215
NXP USA Inc.
RF DIODE PIN 50V 250MW TO236AB
1N5711WS-7
1N5711WS-7
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
1N5711#T25
1N5711#T25
Broadcom Limited
RF DIODE SCHOTTKY 70V 250MW
1N5711W-13
1N5711W-13
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB