BAP65-03,115
  • Share:

NXP USA Inc. BAP65-03,115

Manufacturer No:
BAP65-03,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF DIODE PIN 30V 500MW SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP65-03,115 is a Silicon planar PIN diode manufactured by NXP USA Inc. This component is packaged in a small plastic SMD package, specifically the SOD-323 package style. It is designed for high-performance applications requiring precise control over RF signals.

Key Specifications

ParameterConditionsMinTypMaxUnit
Continuous Reverse Voltage (VR)---30V
Continuous Forward Current (IF)---100mA
Total Power Dissipation (Ptot)Tsp ≤ 90 °C--500mW
Storage Temperature (Tstg)--65-150°C
Junction Temperature (Tj)--65-150°C
Thermal Resistance from Junction to Solder Point (Rth(j-sp))--120-K/W
Maximum Diode Capacitance---0.8pF
Series Inductance (LS)IF = 100 mA; f = 100 MHz--1.5nH

Key Features

  • High voltage, current controlled
  • RF resistor for RF attenuators and switches
  • Low diode capacitance
  • Low diode forward resistance
  • Very low series inductance

Applications

  • RF attenuators and switches
  • Bandswitch for TV tuners
  • Mobile communication

Q & A

  1. What is the BAP65-03,115? The BAP65-03,115 is a Silicon planar PIN diode in a SOD-323 package, manufactured by NXP USA Inc.
  2. What is the maximum continuous reverse voltage of the BAP65-03,115? The maximum continuous reverse voltage is 30 V.
  3. What is the maximum continuous forward current of the BAP65-03,115? The maximum continuous forward current is 100 mA.
  4. What are the typical applications of the BAP65-03,115? Typical applications include RF attenuators and switches, bandswitch for TV tuners, and mobile communication.
  5. What is the package style of the BAP65-03,115? The package style is SOD-323.
  6. What is the mounting method of the BAP65-03,115? The mounting method is surface mount.
  7. What is the maximum diode capacitance of the BAP65-03,115? The maximum diode capacitance is 0.8 pF.
  8. What is the thermal resistance from junction to solder point of the BAP65-03,115? The thermal resistance from junction to solder point is 120 K/W.
  9. What are the key features of the BAP65-03,115? Key features include high voltage, current controlled; RF resistor for RF attenuators and switches; low diode capacitance; low diode forward resistance; and very low series inductance.
  10. What is the storage temperature range for the BAP65-03,115? The storage temperature range is from -65 °C to 150 °C.

Product Attributes

Diode Type:PIN - Single
Voltage - Peak Reverse (Max):30V
Current - Max:100 mA
Capacitance @ Vr, F:0.375pF @ 20V, 1MHz
Resistance @ If, F:350mOhm @ 100mA, 100MHz
Power Dissipation (Max):500 mW
Operating Temperature:-65°C ~ 150°C (TJ)
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
0 Remaining View Similar

In Stock

$0.35
2,456

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP65-03,115 BAP63-03,115 BAP64-03,115 BAP65-02,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Active Active
Diode Type PIN - Single PIN - Single PIN - Single PIN - Single
Voltage - Peak Reverse (Max) 30V 50V 175V 30V
Current - Max 100 mA 100 mA 100 mA 100 mA
Capacitance @ Vr, F 0.375pF @ 20V, 1MHz 0.32pF @ 20V, 1MHz 0.35pF @ 20V, 1MHz 0.375pF @ 20V, 1MHz
Resistance @ If, F 350mOhm @ 100mA, 100MHz 1.5Ohm @ 100mA, 100MHz 1.35Ohm @ 100mA, 100MHz 350mOhm @ 100mA, 100MHz
Power Dissipation (Max) 500 mW 500 mW 500 mW 715 mW
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case SC-76, SOD-323 SC-76, SOD-323 SC-76, SOD-323 SC-79, SOD-523
Supplier Device Package SOD-323 SOD-323 SOD-323 SOD-523

Related Product By Categories

1N5711W-7-F
1N5711W-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
1N5711
1N5711
STMicroelectronics
RF DIODE SCHOTTKY 70V 430MW DO35
BAT17,215
BAT17,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
PMBD353,215
PMBD353,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BLC6G27LS-100,118
BLC6G27LS-100,118
NXP Semiconductors
BLC6G27LS-100 - RF POWER DISCRET
MMBD352LT1G
MMBD352LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
SKY16602-632LF
SKY16602-632LF
Skyworks Solutions Inc.
RF DIODE PIN 20V 12W 2MLP
MMBD452LT1G
MMBD452LT1G
onsemi
DIODE SCHOTTKY 30V 225MW SOT23-3
BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BA591,135
BA591,135
NXP USA Inc.
DIODE STANDARD 35V 500MW SOD323
1N5711#T50
1N5711#T50
Broadcom Limited
RF DIODE SCHOTTKY 70V 250MW
BAP64LX/Z,315
BAP64LX/Z,315
NXP USA Inc.
DIODE PIN 60V 150MW DFN1006D-2

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
S9S12G128AMLH
S9S12G128AMLH
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 64LQFP
MC56F84550VLFR
MC56F84550VLFR
NXP USA Inc.
IC MCU 32BIT 96KB FLASH 48LQFP
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
PCA9575PW1,118
PCA9575PW1,118
NXP USA Inc.
IC I/O EXPANDER I2C 16B 24TSSOP
74HC259N,652
74HC259N,652
NXP USA Inc.
IC ADDRESSABLE LATCH 8BIT 16DIP
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
PSMN2R9-30MLC115
PSMN2R9-30MLC115
NXP USA Inc.
NOW NEXPERIA PSMN2R9-30MLC 70A,