BAP50-05W,115
  • Share:

NXP USA Inc. BAP50-05W,115

Manufacturer No:
BAP50-05W,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PIN DIODE, 50V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP50-05W,115 is a high-performance PIN diode manufactured by NXP USA Inc. This component is designed for use in various RF and microwave applications, offering excellent switching and attenuating characteristics. The diode is packaged in a compact SC-70 (SOT-323) package, making it suitable for surface-mount technology (SMT) assembly.

Key Specifications

ParameterValue
PackageSC-70 (SOT-323)
Number of Terminals3
Forward Current (IF)50 mA
Reverse Voltage (VR)50 V
Power Dissipation (Pd)240 mW
Junction Temperature (TJ)-65°C to 150°C
Diode Capacitance (Cd)Typically 0.5 pF at 5 V, 1 MHz
RoHS ComplianceYes
Moisture Sensitivity Level (MSL)e3
Terminal FinishTin (Sn)

Key Features

  • High switching speed and low capacitance, making it ideal for RF and microwave applications.
  • Compact SC-70 (SOT-323) package suitable for SMT assembly.
  • Low diode capacitance of typically 0.5 pF at 5 V, 1 MHz.
  • High forward current rating of 50 mA and reverse voltage rating of 50 V.
  • Wide junction temperature range from -65°C to 150°C.
  • RoHS compliant and moisture sensitivity level of e3.

Applications

The BAP50-05W,115 PIN diode is widely used in various RF and microwave applications, including:

  • RF switches and attenuators.
  • Microwave circuits.
  • Wireless communication systems.
  • Radar systems.
  • Medical and industrial equipment requiring high-frequency signal handling.

Q & A

  1. What is the package type of the BAP50-05W,115?
    The BAP50-05W,115 is packaged in a SC-70 (SOT-323) package.
  2. What is the forward current rating of the BAP50-05W,115?
    The forward current rating is 50 mA.
  3. What is the reverse voltage rating of the BAP50-05W,115?
    The reverse voltage rating is 50 V.
  4. What is the typical diode capacitance of the BAP50-05W,115?
    The typical diode capacitance is 0.5 pF at 5 V, 1 MHz.
  5. Is the BAP50-05W,115 RoHS compliant?
    Yes, the BAP50-05W,115 is RoHS compliant.
  6. What is the moisture sensitivity level (MSL) of the BAP50-05W,115?
    The MSL is e3.
  7. What are the typical applications of the BAP50-05W,115?
    The typical applications include RF switches, attenuators, microwave circuits, wireless communication systems, and radar systems.
  8. What is the junction temperature range of the BAP50-05W,115?
    The junction temperature range is from -65°C to 150°C.
  9. What is the power dissipation rating of the BAP50-05W,115?
    The power dissipation rating is 240 mW.
  10. Is the BAP50-05W,115 suitable for surface-mount technology (SMT) assembly?
    Yes, it is suitable for SMT assembly.

Product Attributes

Diode Type:- 
Voltage - Peak Reverse (Max):- 
Current - Max:- 
Capacitance @ Vr, F:- 
Resistance @ If, F:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.10
8,100

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP50-05W,115 BAP51-05W,115 BAP50-04W,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
Diode Type - PIN - 1 Pair Series Connection PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max) - 50V 50V
Current - Max - 50 mA 50 mA
Capacitance @ Vr, F - 0.35pF @ 5V, 1MHz 0.5pF @ 5V, 1MHz
Resistance @ If, F - 2.5Ohm @ 10mA, 100MHz 5Ohm @ 10mA, 100MHz
Power Dissipation (Max) - 240 mW 240 mW
Operating Temperature - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case - SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package - SC-70 SC-70

Related Product By Categories

1N5711W-7-F
1N5711W-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 333MW SOD123
1N5711
1N5711
STMicroelectronics
RF DIODE SCHOTTKY 70V 430MW DO35
MMBD352WT1G
MMBD352WT1G
onsemi
RF DIODE SCHOTTKY 7V 200MW SC70
BAP51-02,115
BAP51-02,115
NXP USA Inc.
RF DIODE PIN 60V 715MW SOD523
MMBD301LT1G
MMBD301LT1G
onsemi
DIODE SCHOTTKY 30V 200MW SOT23-3
BA591115
BA591115
NXP USA Inc.
BA591 - MIXER DIODE, VERY HIGH F
MMBD354LT1G
MMBD354LT1G
onsemi
DIODE SCHOTTKY 7V 225MW SOT23-3
MMBD701LT1G
MMBD701LT1G
onsemi
DIODE SCHOTTKY 70V 200MW SOT23-3
BAP50-05W,115
BAP50-05W,115
NXP USA Inc.
PIN DIODE, 50V
MMBV3401LT1G
MMBV3401LT1G
onsemi
RF DIODE PIN 35V 200MW SOT23-3
HSMS-2822-TR1G
HSMS-2822-TR1G
Broadcom Limited
RF DIODE SCHOTTKY 15V SOT23-3
1N5711WS-13
1N5711WS-13
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323

Related Product By Brand

PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
PCA8574TS,118
PCA8574TS,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 20SSOP
MCZ33904C5EKR2
MCZ33904C5EKR2
NXP USA Inc.
IC INTERFACE SPECIALIZED 32SOIC
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
MMPF0200NPAZES
MMPF0200NPAZES
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56QFN