BAP50-05W,115
  • Share:

NXP USA Inc. BAP50-05W,115

Manufacturer No:
BAP50-05W,115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PIN DIODE, 50V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAP50-05W,115 is a high-performance PIN diode manufactured by NXP USA Inc. This component is designed for use in various RF and microwave applications, offering excellent switching and attenuating characteristics. The diode is packaged in a compact SC-70 (SOT-323) package, making it suitable for surface-mount technology (SMT) assembly.

Key Specifications

ParameterValue
PackageSC-70 (SOT-323)
Number of Terminals3
Forward Current (IF)50 mA
Reverse Voltage (VR)50 V
Power Dissipation (Pd)240 mW
Junction Temperature (TJ)-65°C to 150°C
Diode Capacitance (Cd)Typically 0.5 pF at 5 V, 1 MHz
RoHS ComplianceYes
Moisture Sensitivity Level (MSL)e3
Terminal FinishTin (Sn)

Key Features

  • High switching speed and low capacitance, making it ideal for RF and microwave applications.
  • Compact SC-70 (SOT-323) package suitable for SMT assembly.
  • Low diode capacitance of typically 0.5 pF at 5 V, 1 MHz.
  • High forward current rating of 50 mA and reverse voltage rating of 50 V.
  • Wide junction temperature range from -65°C to 150°C.
  • RoHS compliant and moisture sensitivity level of e3.

Applications

The BAP50-05W,115 PIN diode is widely used in various RF and microwave applications, including:

  • RF switches and attenuators.
  • Microwave circuits.
  • Wireless communication systems.
  • Radar systems.
  • Medical and industrial equipment requiring high-frequency signal handling.

Q & A

  1. What is the package type of the BAP50-05W,115?
    The BAP50-05W,115 is packaged in a SC-70 (SOT-323) package.
  2. What is the forward current rating of the BAP50-05W,115?
    The forward current rating is 50 mA.
  3. What is the reverse voltage rating of the BAP50-05W,115?
    The reverse voltage rating is 50 V.
  4. What is the typical diode capacitance of the BAP50-05W,115?
    The typical diode capacitance is 0.5 pF at 5 V, 1 MHz.
  5. Is the BAP50-05W,115 RoHS compliant?
    Yes, the BAP50-05W,115 is RoHS compliant.
  6. What is the moisture sensitivity level (MSL) of the BAP50-05W,115?
    The MSL is e3.
  7. What are the typical applications of the BAP50-05W,115?
    The typical applications include RF switches, attenuators, microwave circuits, wireless communication systems, and radar systems.
  8. What is the junction temperature range of the BAP50-05W,115?
    The junction temperature range is from -65°C to 150°C.
  9. What is the power dissipation rating of the BAP50-05W,115?
    The power dissipation rating is 240 mW.
  10. Is the BAP50-05W,115 suitable for surface-mount technology (SMT) assembly?
    Yes, it is suitable for SMT assembly.

Product Attributes

Diode Type:- 
Voltage - Peak Reverse (Max):- 
Current - Max:- 
Capacitance @ Vr, F:- 
Resistance @ If, F:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.10
8,100

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAP50-05W,115 BAP51-05W,115 BAP50-04W,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
Diode Type - PIN - 1 Pair Series Connection PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max) - 50V 50V
Current - Max - 50 mA 50 mA
Capacitance @ Vr, F - 0.35pF @ 5V, 1MHz 0.5pF @ 5V, 1MHz
Resistance @ If, F - 2.5Ohm @ 10mA, 100MHz 5Ohm @ 10mA, 100MHz
Power Dissipation (Max) - 240 mW 240 mW
Operating Temperature - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Package / Case - SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package - SC-70 SC-70

Related Product By Categories

BAP64-05W-TP
BAP64-05W-TP
Micro Commercial Co
RF DIODE PIN 175V 200MW SOT323
BAP70-02,115
BAP70-02,115
NXP USA Inc.
RF DIODE PIN 50V 415MW SOD523
PMBD353,215
PMBD353,215
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V TO236AB
BAP55LX,315
BAP55LX,315
NXP USA Inc.
RF DIODE PIN 50V 135MW 2DFN
1N5711WS-7-F
1N5711WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 70V 150MW SOD323
MMDL301T1G
MMDL301T1G
onsemi
DIODE SCHOTTKY 30V 200MW SOD323
BAP64-03,115
BAP64-03,115
NXP USA Inc.
RF DIODE PIN 175V 500MW SOD323
MBD330DWT1G
MBD330DWT1G
onsemi
RF DIODE SCHOTTKY 30V 120MW SC88
1PS79SB17,115
1PS79SB17,115
Nexperia USA Inc.
RF DIODE SCHOTTKY 4V SOD523
BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
BAP51-05W,115
BAP51-05W,115
NXP USA Inc.
RF DIODE PIN 50V 240MW SOT323-3
1N5711#T25
1N5711#T25
Broadcom Limited
RF DIODE SCHOTTKY 70V 250MW

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
MC33771BTA1AER2
MC33771BTA1AER2
NXP USA Inc.
14-CHANNEL LI-ION BATTERY CELL C
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON
BGU7005/Z/N2115
BGU7005/Z/N2115
NXP USA Inc.
NARROW BAND LOW POWER AMPLIFIER
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP