PMBD914/DG215
  • Share:

NXP USA Inc. PMBD914/DG215

Manufacturer No:
PMBD914/DG215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PMBD914 - RECTIFIER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMBD914/DG215 is a high-speed switching diode manufactured by Nexperia (previously part of NXP USA Inc.). This diode is fabricated using planar technology and is encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for high-speed switching applications and offers several key benefits, including high switching speed, low capacitance, and low leakage current. The PMBD914/DG215 is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Key Specifications

ParameterValue
Type NumberPMBD914
PackageSOT23 (TO-236AB)
Reverse Voltage (VR)100 V
Repetitive Peak Reverse Voltage (VRRM)100 V
Forward Current (IF)215 mA
Forward Voltage (VF)1.25 V @ IF = 50 mA
Reverse Current (IR)25 nA @ VR = 75 V
Switching Time (trr)≤ 4 ns
Capacitance (Cd)≤ 1.5 pF
Operating Temperature Range-65°C to +150°C
AEC-Q101 QualifiedYes

Key Features

  • High-speed switching with a recovery time (trr) of ≤ 4 ns
  • Low capacitance (Cd) of ≤ 1.5 pF
  • Low leakage current
  • AEC-Q101 qualified for automotive applications
  • Small SOT23 (TO-236AB) SMD plastic package
  • Wide operating temperature range from -65°C to +150°C

Applications

The PMBD914/DG215 high-speed switching diode is suitable for a variety of applications across different industries, including:

  • Automotive systems
  • Industrial control systems
  • Power supplies and DC-DC converters
  • Consumer electronics
  • Mobile and wearable devices

Q & A

  1. What is the maximum reverse voltage of the PMBD914/DG215 diode?
    The maximum reverse voltage (VR) is 100 V.
  2. What is the maximum forward current of the PMBD914/DG215 diode?
    The maximum forward current (IF) is 215 mA.
  3. What is the typical forward voltage of the PMBD914/DG215 diode?
    The typical forward voltage (VF) is 1.25 V at IF = 50 mA.
  4. What is the recovery time (trr) of the PMBD914/DG215 diode?
    The recovery time (trr) is ≤ 4 ns.
  5. Is the PMBD914/DG215 diode AEC-Q101 qualified?
    Yes, the PMBD914/DG215 diode is AEC-Q101 qualified.
  6. What is the operating temperature range of the PMBD914/DG215 diode?
    The operating temperature range is from -65°C to +150°C.
  7. What is the package type of the PMBD914/DG215 diode?
    The package type is SOT23 (TO-236AB).
  8. What are the typical applications of the PMBD914/DG215 diode?
    The diode is used in automotive systems, industrial control systems, power supplies, consumer electronics, and mobile and wearable devices.
  9. What is the capacitance (Cd) of the PMBD914/DG215 diode?
    The capacitance (Cd) is ≤ 1.5 pF.
  10. Where can I find more detailed specifications and datasheets for the PMBD914/DG215 diode?
    You can find detailed specifications and datasheets on the Nexperia website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Diode Type:- 
Voltage - DC Reverse (Vr) (Max):- 
Current - Average Rectified (Io):- 
Voltage - Forward (Vf) (Max) @ If:- 
Speed:- 
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

$0.02
1,403

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

1N4148UR-1
1N4148UR-1
Microchip Technology
DIODE GEN PURP 75V 200MA DO213AA
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
S110FA
S110FA
onsemi
DIODE SCHOTTKY 100V 1A SOD123FA
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
BAS21WQ-7-F
BAS21WQ-7-F
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N4937G R1G
1N4937G R1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL

Related Product By Brand

PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BUK7Y7R6-40E/GFX
BUK7Y7R6-40E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
S9S12G128F0CLLR
S9S12G128F0CLLR
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 100LQFP
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
74AHC1G126GW/C4125
74AHC1G126GW/C4125
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES